IRFR6215TRPBF vs IRFR6215TRLPBF Comparación
Comparación detallada lado a lado de IRFR6215TRPBF por Infineon y IRFR6215TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR6215TRPBF | IRFR6215TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,38 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -150 V | -150 V |
| Continuous Drain Current (ID, Tc=25C) | -13 A | — |
| Power Dissipation (PD, Tc=25C) | 110 W | — |
| On-Resistance (RDS(on) max) | 0.295 ohm at VGS = -10 V | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: gate-source voltage rating] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 44 nC | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Technology | HEXFET (5th generation IR MOSFET) | HEXFET Power MOSFET (Fifth Generation) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 | 1 |
| Estado RoHS | Compliant (Lead-Free PBF suffix) | Compliant |
| REACH Status | Compliant | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 580 mOhm |
| Total Gate Charge (Qg) typ | — | 44 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Lead-Free | — | Yes |