IRFR6215TRPBF vs IRFR6215TRLPBF Comparison

Detailed side-by-side comparison of IRFR6215TRPBF by Infineon and IRFR6215TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR6215TRPBF IRFR6215TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.38
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V -150 V
Continuous Drain Current (ID, Tc=25C) -13 A β€”
Power Dissipation (PD, Tc=25C) 110 W β€”
On-Resistance (RDS(on) max) 0.295 ohm at VGS = -10 V β€”
Gate-Source Voltage (VGS max) [DATA_NEEDED: gate-source voltage rating] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 44 nC β€”
Operating Temperature Range -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Technology HEXFET (5th generation IR MOSFET) HEXFET Power MOSFET (Fifth Generation)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 1
RoHS Status Compliant (Lead-Free PBF suffix) Compliant
REACH Status Compliant β€”
Manufacturer Infineon (formerly International Rectifier) β€”
Continuous Drain Current (ID) at Tc=25C β€” -13 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=-10V β€” 580 mOhm
Total Gate Charge (Qg) typ β€” 44 nC
Power Dissipation (PD) at Tc=25C β€” 110 W
Maximum Operating Junction Temperature β€” 175 C
Lead-Free β€” Yes

Datasheets & Resources

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