IRFS4010TRLPBF vs IRFS7440TRLPBF Comparación
Comparación detallada lado a lado de IRFS4010TRLPBF por Infineon y IRFS7440TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS4010TRLPBF | IRFS7440TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,98 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | IR MOSFET (HEXFET) | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate-to-Source Voltage (VGS) max | Plus or minus 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | 143 nC | 90 nC (typical) |
| Power Dissipation (PD) at TC=25C | 375 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | D2PAK (TO-263AB), surface mount | TO-263 (D2PAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Drive Voltage | 10 V (normal level, optimized) | — |
| Estado RoHS | Compliant | Compliant (lead-free) |
| Nivel MSL | 1 | — |
| Qualification | JEDEC standard | JEDEC standard |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Power Dissipation (PD) at Tc=25C | — | 208 W |
| On-Resistance (RDS(on)) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Drive Voltage (optimized) | — | 10 V (normal level) |
| Operating Frequency Range (optimized) | — | <100 kHz |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: junction temperature range] |