IRFS4010TRLPBF vs IRFS7440TRLPBF 对比

详细并排对比 IRFS4010TRLPBF 出自 Infineon 和 IRFS7440TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS4010TRLPBF IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF ✓ 量产中
Infineon
IRFS7440TRLPBF IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF ✓ 量产中

规格对比

参数 IRFS4010TRLPBF IRFS7440TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.98
FET Type N-Channel MOSFET N-Channel
Technology IR MOSFET (HEXFET) MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at TC=25C 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V 4.7 mOhm —
Gate-to-Source Voltage (VGS) max Plus or minus 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) 143 nC 90 nC (typical)
Power Dissipation (PD) at TC=25C 375 W —
工作结温 -55C to +175C —
封装 D2PAK (TO-263AB), surface mount TO-263 (D2PAK), surface mount
安装类型 Surface Mount Surface Mount
Gate Drive Voltage 10 V (normal level, optimized) —
RoHS 状态 Compliant Compliant (lead-free)
MSL 等级 1 —
Qualification JEDEC standard JEDEC standard
Manufacturer — Infineon Technologies
Series — StrongIRFET
Continuous Drain Current (ID) at Tc=25C — 120 A
Power Dissipation (PD) at Tc=25C — 208 W
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
工作温度范围 — [DATA_NEEDED: junction temperature range]

数据手册与资源

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