IRS2101STRPBF vs IR2104SPBF Comparación
Comparación detallada lado a lado de IRS2101STRPBF por Infineon y IR2104SPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS2101STRPBF | IR2104SPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,41 |
| Driver Type | High-Side, Low-Side (Half-Bridge) | — |
| Number of Drivers | 2 | 2 (high-side + low-side) |
| Número de salidas | 2-OUT | — |
| Configuración de salida | Non-Inverting | — |
| Maximum Offset Voltage | 600 V | — |
| Gate Drive Supply (VCC) | 10 V to 20 V | — |
| Bootstrap Supply (VBS) | 10 V to 20 V | — |
| Source Current (typical) | 0.29 A | — |
| Sink Current (typical) | 0.6 A | — |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| VS Transient Range | -5 V to +600 V (logic operational) | — |
| Undervoltage Lockout | Yes (VCC and VBS) | Yes (VCC UVLO) |
| Propagation Delay Matching | Matched both channels | — |
| dV/dt Immunity | Yes (latch-immune CMOS) | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | 8-SOIC (SOIC-8) | 8-pin SOIC |
| Tipo de montaje | Surface Mount | — |
| Packaging | Tape & Reel (TRPBF) | — |
| Technology | HVIC + latch-immune CMOS | — |
| Estado RoHS | Compliant (PBF suffix) | Compliant (PBF suffix indicates lead-free) |
| Función | — | Half-bridge gate driver |
| Configuration | — | High and Low Side |
| Input Type | — | Logic (non-inverting) |
| Maximum Offset / Bootstrap Supply Voltage | — | 600 V |
| Gate Drive Supply Range (VCC) | — | 10 V to 20 V |
| Output Source Current | — | 130 mA typical |
| Output Sink Current | — | 270 mA typical |
| Propagation Delay | — | 680 ns typical |
| Tiempo de subida | — | 160 ns typical |
| Tiempo de bajada | — | 60 ns typical |
| Deadtime | — | Internally set |
| Cross-Conduction Prevention | — | Yes |
| Rango de temperatura de funcionamiento | — | -40 C to +125 C |