IRS2101STRPBF vs IR2104SPBF Vergleich
Detaillierter Direktvergleich von IRS2101STRPBF von Infineon und IR2104SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRS2101STRPBF | IR2104SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,41 |
| Driver Type | High-Side, Low-Side (Half-Bridge) | — |
| Number of Drivers | 2 | 2 (high-side + low-side) |
| Anzahl der Ausgänge | 2-OUT | — |
| Ausgangskonfiguration | Non-Inverting | — |
| Maximum Offset Voltage | 600 V | — |
| Gate Drive Supply (VCC) | 10 V to 20 V | — |
| Bootstrap Supply (VBS) | 10 V to 20 V | — |
| Source Current (typical) | 0.29 A | — |
| Sink Current (typical) | 0.6 A | — |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| VS Transient Range | -5 V to +600 V (logic operational) | — |
| Undervoltage Lockout | Yes (VCC and VBS) | Yes (VCC UVLO) |
| Propagation Delay Matching | Matched both channels | — |
| dV/dt Immunity | Yes (latch-immune CMOS) | — |
| Betriebstemperatur | -40C to +125C | — |
| Gehäuse | 8-SOIC (SOIC-8) | 8-pin SOIC |
| Montageart | Surface Mount | — |
| Packaging | Tape & Reel (TRPBF) | — |
| Technology | HVIC + latch-immune CMOS | — |
| RoHS-Status | Compliant (PBF suffix) | Compliant (PBF suffix indicates lead-free) |
| Funktion | — | Half-bridge gate driver |
| Configuration | — | High and Low Side |
| Input Type | — | Logic (non-inverting) |
| Maximum Offset / Bootstrap Supply Voltage | — | 600 V |
| Gate Drive Supply Range (VCC) | — | 10 V to 20 V |
| Output Source Current | — | 130 mA typical |
| Output Sink Current | — | 270 mA typical |
| Propagation Delay | — | 680 ns typical |
| Anstiegszeit | — | 160 ns typical |
| Abfallzeit | — | 60 ns typical |
| Deadtime | — | Internally set |
| Cross-Conduction Prevention | — | Yes |
| Betriebstemperaturbereich | — | -40 C to +125 C |