K9F6408Q0C vs K9F6408U0B Comparación

Comparación detallada lado a lado de K9F6408Q0C por Samsung Electronics y K9F6408U0B por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

Comparación de especificaciones

Parámetro K9F6408Q0C K9F6408U0B
Marca Samsung Electronics Samsung Electronics
Categoría Memory ICs Memory ICs
Estado del ciclo de vida Obsolete Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $1,31 $3,20
Tipo de memoria NAND Flash (SLC) NAND Flash
Memory Capacity 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) —
Organización de memoria 8M x 8 —
Interfaz Parallel, 8-bit multiplexed I/O 8-bit multiplexed command/address/data I/O
Operating Voltage (VCC) 1.65 V to 1.95 V 2.7 V to 3.6 V
Access Time 10 us (read cycle, family listing) —
Page Size 528 bytes (512 data + 16 spare) 528 bytes (512 data + 16 spare)
Temperature Grade C (commercial), i (industrial) —
Package (HIB0 variant) 48-ball TBGA —
Package (family TBGA note) 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball —
Tipo de montaje Surface Mount Surface Mount
Spare Area 256K x 8 bit —
Control Signals CLE, ALE, CE, WE, RE, WP, R/B —
Bad Block Management Host-managed (marking in spare area) —
Endurance [DATA_NEEDED: program/erase cycles] —
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Nivel MSL [DATA_NEEDED: moisture sensitivity level] —
Memory Organization — 8M x 8 bit (64Mbit)
Access Time / Cycle Time — 50 ns
Encapsulado — 44-TSOP2
Block Size — [DATA_NEEDED: block organization from datasheet]
Program/Erase Endurance — 100K program/erase cycles
Write Protect — Yes (WP pin)
Ready/Busy Output — Yes (R/B open-drain)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

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