K9F6408Q0C vs K9F6408U0B Vergleich

Detaillierter Direktvergleich von K9F6408Q0C von Samsung Electronics und K9F6408U0B von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

Spezifikationsvergleich

Parameter K9F6408Q0C K9F6408U0B
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Obsolete Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,31 $3,20
Speichertyp NAND Flash (SLC) NAND Flash
Memory Capacity 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) —
Speicherorganisation 8M x 8 —
Schnittstelle Parallel, 8-bit multiplexed I/O 8-bit multiplexed command/address/data I/O
Operating Voltage (VCC) 1.65 V to 1.95 V 2.7 V to 3.6 V
Access Time 10 us (read cycle, family listing) —
Page Size 528 bytes (512 data + 16 spare) 528 bytes (512 data + 16 spare)
Temperature Grade C (commercial), i (industrial) —
Package (HIB0 variant) 48-ball TBGA —
Package (family TBGA note) 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball —
Montageart Surface Mount Surface Mount
Spare Area 256K x 8 bit —
Control Signals CLE, ALE, CE, WE, RE, WP, R/B —
Bad Block Management Host-managed (marking in spare area) —
Endurance [DATA_NEEDED: program/erase cycles] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL-Level [DATA_NEEDED: moisture sensitivity level] —
Memory Organization — 8M x 8 bit (64Mbit)
Access Time / Cycle Time — 50 ns
Gehäuse — 44-TSOP2
Block Size — [DATA_NEEDED: block organization from datasheet]
Program/Erase Endurance — 100K program/erase cycles
Write Protect — Yes (WP pin)
Ready/Busy Output — Yes (R/B open-drain)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

Datenblätter & Ressourcen

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