K9F6408Q0C vs K9F6408U0B Vergleich
Detaillierter Direktvergleich von K9F6408Q0C von Samsung Electronics und K9F6408U0B von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics
K9F6408Q0C ObsoleteSpezifikationsvergleich
| Parameter | K9F6408Q0C | K9F6408U0B |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,31 | $3,20 |
| Speichertyp | NAND Flash (SLC) | NAND Flash |
| Memory Capacity | 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) | — |
| Speicherorganisation | 8M x 8 | — |
| Schnittstelle | Parallel, 8-bit multiplexed I/O | 8-bit multiplexed command/address/data I/O |
| Operating Voltage (VCC) | 1.65 V to 1.95 V | 2.7 V to 3.6 V |
| Access Time | 10 us (read cycle, family listing) | — |
| Page Size | 528 bytes (512 data + 16 spare) | 528 bytes (512 data + 16 spare) |
| Temperature Grade | C (commercial), i (industrial) | — |
| Package (HIB0 variant) | 48-ball TBGA | — |
| Package (family TBGA note) | 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball | — |
| Montageart | Surface Mount | Surface Mount |
| Spare Area | 256K x 8 bit | — |
| Control Signals | CLE, ALE, CE, WE, RE, WP, R/B | — |
| Bad Block Management | Host-managed (marking in spare area) | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Access Time / Cycle Time | — | 50 ns |
| Gehäuse | — | 44-TSOP2 |
| Block Size | — | [DATA_NEEDED: block organization from datasheet] |
| Program/Erase Endurance | — | 100K program/erase cycles |
| Write Protect | — | Yes (WP pin) |
| Ready/Busy Output | — | Yes (R/B open-drain) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |