K9F6408Q0C vs K9F6408U0B Comparação

Comparação detalhada lado a lado de K9F6408Q0C por Samsung Electronics e K9F6408U0B por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

Comparação de especificações

Parâmetro K9F6408Q0C K9F6408U0B
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Obsolete Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $1,31 $3,20
Tipo de memória NAND Flash (SLC) NAND Flash
Memory Capacity 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) —
Organização da memória 8M x 8 —
Interface Parallel, 8-bit multiplexed I/O 8-bit multiplexed command/address/data I/O
Operating Voltage (VCC) 1.65 V to 1.95 V 2.7 V to 3.6 V
Access Time 10 us (read cycle, family listing) —
Page Size 528 bytes (512 data + 16 spare) 528 bytes (512 data + 16 spare)
Temperature Grade C (commercial), i (industrial) —
Package (HIB0 variant) 48-ball TBGA —
Package (family TBGA note) 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball —
Tipo de montagem Surface Mount Surface Mount
Spare Area 256K x 8 bit —
Control Signals CLE, ALE, CE, WE, RE, WP, R/B —
Bad Block Management Host-managed (marking in spare area) —
Endurance [DATA_NEEDED: program/erase cycles] —
Temperatura de operação [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Nível MSL [DATA_NEEDED: moisture sensitivity level] —
Memory Organization — 8M x 8 bit (64Mbit)
Access Time / Cycle Time — 50 ns
Encapsulamento — 44-TSOP2
Block Size — [DATA_NEEDED: block organization from datasheet]
Program/Erase Endurance — 100K program/erase cycles
Write Protect — Yes (WP pin)
Ready/Busy Output — Yes (R/B open-drain)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

Fichas técnicas e recursos

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