K9F6408Q0C vs K9F6408U0B 对比

详细并排对比 K9F6408Q0C 出自 Samsung Electronics 和 K9F6408U0B 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

规格对比

参数 K9F6408Q0C K9F6408U0B
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Obsolete Obsolete
库存状态 有库存 有库存
单价(USD) $1.31 $3.20
存储器类型 NAND Flash (SLC) NAND Flash
Memory Capacity 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) —
存储组织 8M x 8 —
接口 Parallel, 8-bit multiplexed I/O 8-bit multiplexed command/address/data I/O
Operating Voltage (VCC) 1.65 V to 1.95 V 2.7 V to 3.6 V
Access Time 10 us (read cycle, family listing) —
Page Size 528 bytes (512 data + 16 spare) 528 bytes (512 data + 16 spare)
Temperature Grade C (commercial), i (industrial) —
Package (HIB0 variant) 48-ball TBGA —
Package (family TBGA note) 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball —
安装类型 Surface Mount Surface Mount
Spare Area 256K x 8 bit —
Control Signals CLE, ALE, CE, WE, RE, WP, R/B —
Bad Block Management Host-managed (marking in spare area) —
Endurance [DATA_NEEDED: program/erase cycles] —
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Memory Organization — 8M x 8 bit (64Mbit)
Access Time / Cycle Time — 50 ns
封装 — 44-TSOP2
Block Size — [DATA_NEEDED: block organization from datasheet]
Program/Erase Endurance — 100K program/erase cycles
Write Protect — Yes (WP pin)
Ready/Busy Output — Yes (R/B open-drain)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

数据手册与资源

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