K9PDG08U5M vs K9DVGB8U5M Comparación

Comparación detallada lado a lado de K9PDG08U5M por Samsung Electronics y K9DVGB8U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Fin de vida
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Activo

Comparación de especificaciones

Parámetro K9PDG08U5M K9DVGB8U5M
Marca Samsung Electronics Samsung Electronics
Categoría EEPROM Memory ICs
Estado del ciclo de vida Fin de vida Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $4,20 $3,05
Tipo de memoria NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Organización de memoria x8 (multiplexed I/O) [DATA_NEEDED: capacity organization]
Tensión de alimentación [DATA_NEEDED: supply voltage range] [DATA_NEEDED: VCC range]
Encapsulado TSOP1-48 [DATA_NEEDED: package type and dimensions]
Tipo de montaje Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Interfaz — Asynchronous x8-bit I/O
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Program Time (tPROG) — [DATA_NEEDED: page program time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

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