K9PDG08U5M vs K9DVGB8U5M Comparaison

Comparaison détaillée côte à côte de K9PDG08U5M par Samsung Electronics et K9DVGB8U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Fin de vie
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Actif

Comparaison des spécifications

Paramètre K9PDG08U5M K9DVGB8U5M
Marque Samsung Electronics Samsung Electronics
Catégorie EEPROM Memory ICs
Statut du cycle de vie Fin de vie Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $4,20 $3,05
Type de mémoire NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Organisation de la mémoire x8 (multiplexed I/O) [DATA_NEEDED: capacity organization]
Tension d'alimentation [DATA_NEEDED: supply voltage range] [DATA_NEEDED: VCC range]
Boîtier TSOP1-48 [DATA_NEEDED: package type and dimensions]
Type de montage Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Interface — Asynchronous x8-bit I/O
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Program Time (tPROG) — [DATA_NEEDED: page program time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

Fiches techniques et ressources

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