K9PDG08U5M vs K9DVGB8U5M Vergleich

Detaillierter Direktvergleich von K9PDG08U5M von Samsung Electronics und K9DVGB8U5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Abgekündigt
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Aktiv

Spezifikationsvergleich

Parameter K9PDG08U5M K9DVGB8U5M
Marke Samsung Electronics Samsung Electronics
Kategorie EEPROM Memory ICs
Lebenszyklusstatus Ende des Lebenszyklus Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,20 $3,05
Speichertyp NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Speicherorganisation x8 (multiplexed I/O) [DATA_NEEDED: capacity organization]
Versorgungsspannung [DATA_NEEDED: supply voltage range] [DATA_NEEDED: VCC range]
Gehäuse TSOP1-48 [DATA_NEEDED: package type and dimensions]
Montageart Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Schnittstelle — Asynchronous x8-bit I/O
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Program Time (tPROG) — [DATA_NEEDED: page program time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

Datenblätter & Ressourcen

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