K9PDG08U5M vs K9DVGB8U5M 比較
詳細な並列比較: K9PDG08U5M メーカー: Samsung Electronics および K9DVGB8U5M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9PDG08U5M | K9DVGB8U5M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | EEPROM | Memory ICs |
| ライフサイクル状態 | 製造終了 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.20 | $3.05 |
| メモリタイプ | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | — |
| メモリ構成 | x8 (multiplexed I/O) | [DATA_NEEDED: capacity organization] |
| 電源電圧 | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: VCC range] |
| パッケージ | TSOP1-48 | [DATA_NEEDED: package type and dimensions] |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: main page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: erase block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| インターフェース | — | Asynchronous x8-bit I/O |
| Read Time (tR) | — | [DATA_NEEDED: page read cycle time] |
| Program Time (tPROG) | — | [DATA_NEEDED: page program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |
| Access Interface Signals | — | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | — | Host-managed (controller ECC and bad-block table required) |