LM358DT vs NCV2904DR2G Comparación
Comparación detallada lado a lado de LM358DT por STMicroelectronics y NCV2904DR2G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | LM358DT | NCV2904DR2G |
|---|---|---|
| Marca | STMicroelectronics | onsemi |
| Categoría | Amplifier ICs | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,05 | $0,19 |
| Number of Channels | 2 | — |
| Supply Voltage (Single) | 3 V to 32 V | — |
| Supply Voltage (Split) | ±1.5 V to ±16 V | — |
| Quiescent Current (per Amp) | 350 µA (typical) | — |
| Input Offset Voltage | 2 mV (typical) | — |
| Input Bias Current | 45 nA (typical) | Low input bias current |
| Gain-Bandwidth Product | 1.1 MHz | — |
| Slew Rate | 0.6 V/µs | — |
| Common-Mode Rejection Ratio | 85 dB (typical) | — |
| Power Supply Rejection Ratio | 100 dB (typical) | — |
| Output Current | 40 mA (source/sink) | — |
| Rango de temperatura de funcionamiento | 0°C to +70°C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | SOIC-8 (SO-8) | SOIC-8 (Case 751, D suffix) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Amplifier Type | — | General Purpose Operational Amplifier |
| Number of Circuits | — | 2 |
| Supply Voltage (Single Supply) | — | 3.0 V to 26 V |
| Supply Voltage (Split Supply) | — | +/-1.5 V to +/-13 V |
| Common Mode Input Range | — | Extends to ground/VEE |
| Output | — | Short circuit protected |
| Input Stage | — | True differential input |
| Compensation | — | Internally compensated |
| ESD Protection | — | ESD clamps on inputs |
| Power Drain | — | Low power drain |
| Qualification | — | NCV automotive grade |