LM358DT vs NCV2904DR2G 对比

详细并排对比 LM358DT 出自 STMicroelectronics 和 NCV2904DR2G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
LM358DT LM358DT - Dual Low Power Op Amp | STMicroelectronics | SOIC-8

LM358DT - Dual Low Power Op Amp | STMicroelectronics | SOIC-8

LM358DT ✓ 量产中

规格对比

参数 LM358DT NCV2904DR2G
品牌 STMicroelectronics onsemi
分类 Amplifier ICs Amplifier ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.05 $0.19
Number of Channels 2 —
Supply Voltage (Single) 3 V to 32 V —
Supply Voltage (Split) ±1.5 V to ±16 V —
Quiescent Current (per Amp) 350 µA (typical) —
Input Offset Voltage 2 mV (typical) —
Input Bias Current 45 nA (typical) Low input bias current
Gain-Bandwidth Product 1.1 MHz —
Slew Rate 0.6 V/µs —
Common-Mode Rejection Ratio 85 dB (typical) —
Power Supply Rejection Ratio 100 dB (typical) —
Output Current 40 mA (source/sink) —
工作温度范围 0°C to +70°C [DATA_NEEDED: operating temperature range]
封装 SOIC-8 (SO-8) SOIC-8 (Case 751, D suffix)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Amplifier Type — General Purpose Operational Amplifier
Number of Circuits — 2
Supply Voltage (Single Supply) — 3.0 V to 26 V
Supply Voltage (Split Supply) — +/-1.5 V to +/-13 V
Common Mode Input Range — Extends to ground/VEE
Output — Short circuit protected
Input Stage — True differential input
Compensation — Internally compensated
ESD Protection — ESD clamps on inputs
Power Drain — Low power drain
Qualification — NCV automotive grade

数据手册与资源

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