MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
N.º de pieza: MT58L64L32FT-10 ✗ Fin de vida| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
MT58L64L32FT-10 Descripción general
A synchronous burst SRAM is a static random-access memory that synchronizes address, data, and control inputs to an external clock and generates burst addresses internally, making it a key member of the memory IC family that sits within the broader semiconductor hierarchy (SRAM -> static RAM -> volatile memory -> memory IC -> integrated circuit). Unlike asynchronous SRAMs, burst-mode devices such as the MT58L64L32FT-10 prefetch sequential addresses, reducing effective access time for cache-like workloads and pipelined bus masters.
Key features include single +3.3 V power supply (VDD, +0.3 V/-0.165 V tolerance), a separate isolated +2.5 V or 3.3 V output buffer supply (VDDQ) for I/O voltage flexibility, fast clock-to-output and OE# access times, individual BYTE WRITE enable controls, and SNOOZE MODE for reduced-power standby. Common data input/output pins simplify bus routing on 32-bit and 36-bit (byte-parity) systems.
Architecturally, the flow-through (non-pipelined) SyncBurst design presents data on the same cycle the address is captured, eliminating pipeline latency and simplifying timing closure for controllers that expect zero-wait-state reads and writes. Registered outputs driven by the internal burst address counter support linear, interleaved, and alternate burst sequences per industry-standard processor burst orders.
Typical applications include network router and switch line-card buffering, FPGA and DSP external memory expansion, telecom equipment control-plane memory, industrial controllers, and test instrumentation where deterministic 10 ns access and 66 MHz burst throughput are required.
Design considerations: tie VDDQ to the host bus I/O voltage (2.5 V or 3.3 V), use SNOOZE MODE (asserting ZZ) to cut standby power during idle periods, and verify burst-order configuration straps against the host processor (linear vs. interleaved) before layout freeze.
This page synthesizes distributor availability data, same-family drop-in speed/temperature variants, and practical design guidance not consolidated in the manufacturer datasheet.
Alternativas directas para MT58L64L32FT-10 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT58L64L32FT-10 (mismo factor de forma y huella) — difiere en Access Time, Memory Type, Organization.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT58L64L32FT-10IT
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT58L64L32FT-12
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MT58L64L32FT-8
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MT58L64L32FT-10 Valores máximos y características eléctricas
| Tipo de memoria | SRAM - Synchronous Burst (Flow-Through SyncBurst) |
| Tamaño de memoria | 2 Mbit |
| Organización de memoria | 64K x 32/36 (also 128K x 18) |
| Access Time | 10 ns |
| Frecuencia de reloj máxima | 66 MHz |
| Interfaz | Parallel |
| Supply Voltage VDD | 3.3 V (+0.3 V/-0.165 V) |
| Output Buffer Supply VDDQ | 2.5 V isolated or 3.3 V |
| Write Control | Individual BYTE WRITE enables |
| Standby Feature | SNOOZE MODE reduced-power standby |
| Data I/O | Common data inputs and data outputs |
| Burst Modes | Linear and interleaved burst address sequences |
| Encapsulado | 100-TQFP (14 x 20.1 mm) |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | 0C to +70C (commercial; -10IT variant industrial) |
Guía de configuración de pines de MT58L64L32FT-10 100-tqfp (14 x 20.1 mm)
Configuración de pines para MT58L64L32FT-10 (encapsulado 100-tqfp (14 x 20.1 mm)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para MT58L64L32FT-10.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
MT58L64L32FT-10 es adecuado para 6 aplicacións: Network Router and Switch Line Cards, FPGA External Memory Expansion, Telecom Control-Plane Memory, Industrial Control and Data Logging, Test and Measurement Instrumentation, Aerospace and Defense Legacy Sustaining.
Network Router and Switch Line Cards
The MT58L64L32FT-10 fits network line-card designs where packet buffers, lookup tables, or statistics counters demand deterministic synchronous access. Its 66 MHz burst clock and 10 ns access time keep pace with classic 32-bit backplane buses, while the 64K x 32/36 organization supports word-plus-parity schemes common in forwarding tables. The isolated 2.5 V VDDQ lets the SRAM I/O bank match ASIC or FPGA PHY voltages directly without level translators, and individual BYTE WRITE enables allow efficient field updates of route entries. SNOOZE MODE trims standby power on idle ports, reducing overall card thermal load in high-density chassis deployments.
Recomendado
FPGA External Memory Expansion
As a zero-wait-state flow-through synchronous burst SRAM, the MT58L64L32FT-10 is a natural external memory for FPGA applications needing more capacity than on-chip block RAM provides. The 66 MHz clock integrates easily with standard FPGA memory controllers, and the internal burst counter relieves the fabric from generating sequential addresses. The 2.5 V or 3.3 V VDDQ selection matches common Microchip/Microsemi ProASIC3 I/O banks, and the 10 ns flow-through latency simplifies timing closure compared to pipelined memories. Designers should configure the controller's burst order to match the SRAM's linear or interleaved mode and verify byte-write timing for 32-bit data paths.
Recomendado
Telecom Control-Plane Memory
Telecom control cards - alarms, configuration stores, and protocol state machines - benefit from the MT58L64L32FT-10's deterministic access and non-volatility-free simplicity. The 2-Mbit capacity covers generous state tables, while 10 ns access keeps control-loop latency low during failover processing. Individual BYTE WRITEs permit granular updates of status words without bus contention, and SNOOZE MODE reduces power in redundant standby cards that must preserve state. The commercial 0C to +70C grade suits central-office environments, while the -10IT variant covers outdoor cabinets at -40C to +85C without redesign, since both share the identical 100-TQFP footprint.
Recomendado
Industrial Control and Data Logging
In industrial controllers and data loggers, the MT58L64L32FT-10 provides fast scratchpad memory for real-time sampling loops where FIFO buffering and lookup tables must respond within microseconds. The 66 MHz synchronous interface pairs cleanly with industrial FPGA or DSP controllers, and the 10 ns access time guarantees bounded latency for control algorithms. For harsh environments, the same-footprint MT58L64L32FT-10IT variant extends operation to -40C to +85C, letting one PCB design span cabinet and field installations. SNOOZE MODE cuts standby current in battery-backed logging nodes, and the 3.3 V single-supply operation simplifies power-tree design alongside standard industrial logic.
Recomendado
Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and signal-generator front ends use fast SRAM to capture sample streams, and the MT58L64L32FT-10's 10 ns access with 66 MHz burst operation suits acquisition buffers on moderate-speed channels. The 64K x 32 organization supports 32-bit ADC/sample words plus parity, while the flow-through architecture gives capture controllers immediate data on the addressed cycle - valuable for trigger-position rewind logic. The isolated VDDQ output supply allows clean separation of analog-side I/O noise from the 3.3 V core rail, improving effective resolution, and BYTE WRITE enables support selective channel masking during multi-channel capture playback sequences.
Recomendado
Aerospace and Defense Legacy Sustaining
Defense and aerospace programs frequently sustain legacy FPGA boards that specify flow-through SyncBurst SRAM, and the MT58L64L32FT-10 remains a sourcing option for such sustaining builds. It complements radiation-tolerant Microchip RTAX families where board-level SRAM (rather than inherently rad-hard memory) provides working buffers. The deterministic 10 ns, zero-latency flow-through behavior simplifies worst-case timing analysis required in safety-critical certification, and the fixed commercial/industrial temperature grades map to standard program screening flows. Because the family is EOL, programs should place lifetime buys now; XAIPART stocks verified original inventory and can quote lot-specific date codes for configuration-controlled builds.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT58L64L32FT-10 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT58L64L32FT-10IT | MT58L64L32FT-12 | MT58L64L32FT-8 |
|---|---|---|---|---|
| Package | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) - same | 100-TQFP (14 x 20.1 mm) - same | 100-TQFP (14 x 20.1 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Access Time | 10 ns | 10 ns | 12 ns | 8 ns |
| Memory Size / Organization | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 |
| Supply Voltage VDD | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) |
| VDDQ Output Supply | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V |
| Operating Temperature | 0C to +70C | -40C to +85C (industrial) | 0C to +70C | 0C to +70C |
| Special Features | SNOOZE MODE, BYTE WRITE, flow-through burst | Identical feature set, industrial grade | Identical feature set, slower grade | Identical feature set, faster grade |
Diferenciadores clave
- Zero-latency flow-through read architecture (frente a MT58L64L32FT-12)
- Industrial temperature option without redesign (frente a MT58L64L32FT-10IT)
- Isolated 2.5 V VDDQ output supply (frente a MT58L64L32FT-8)
Notas de diseño
Power the MT58L64L32FT-10 from a single 3.3 V rail within the +0.3 V/-0.165 V tolerance stated in the Micron datasheet, and connect VDDQ to the host bus I/O voltage (2.5 V or 3.3 V). Decouple VDD and VDDQ independently with 0.1 uF ceramic capacitors per supply pin pair plus bulk capacitance at the board entry. When using SNOOZE MODE for standby savings, remember the device requires a wake-up recovery interval before the first valid access - your controller must gate chip-enable during this window.
The 66 MHz burst interface has setup/hold windows around the clock that require matched-length routing on the address and control bus for trace lengths beyond a few centimeters. Keep clock traces shorter than data lines to avoid skew-induced timing violations, and series-terminate (22-33 ohm) drivers on heavily loaded shared data lines. Because this is a flow-through part, there is no pipeline latency margin to absorb timing errors - violations manifest immediately as capture failures, so perform full static timing analysis against the datasheet clock-to-output and setup parameters.
Two frequent integration mistakes: first, mismatched burst order - the SRAM's internal burst counter (linear vs. interleaved) must match the host processor's expected sequence, or reads will return scrambled sequential data; verify the mode configuration before layout release. Second, treating this as a pipelined part - the flow-through SyncBurst delivers data on the same addressed cycle, so controllers designed for pipelined SRAMs will misalign read data by one clock. Also confirm byte-lane mapping of the individual BYTE WRITE pins on 32-bit vs. 36-bit (parity) organizations.
Información de cumplimiento
Compliance data for this EOL Micron SRAM was not present in the provided web data. Request material declarations from the supplier with your quote.
