MW7IC2240NBR1 vs MW7IC2240NR1 Comparación

Comparación detallada lado a lado de MW7IC2240NBR1 por NXP Semiconductors y MW7IC2240NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW7IC2240NR1 MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 ✓ Activo

Comparación de especificaciones

Parámetro MW7IC2240NBR1 MW7IC2240NR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers RF Amplifiers
Estado del ciclo de vida Obsolete Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $29,00 $13,16
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2110 MHz to 2170 MHz (usable 2000-2200 MHz)
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA —
Quiescent Current Stage 2 (IDQ2) 420 mA —
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 5:1
Output VSWR 5:1 5:1
Nominal Impedance 50 ohm (on-chip matched) 50 ohm (DC-blocked input, >3 ohm output)
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) LDMOS (Laterally Diffused MOSFET)
Encapsulado TO-272 WB-16 (over-molded plastic, 16-lead) TO-270 WBL-16 (TO-270WB16), 16-pin ceramic
Tipo de montaje Surface Mount Surface Mount / flange mount with ground pad
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
Estado RoHS [DATA_NEEDED: RoHS compliance] —
Función — RF Power Amplifier (W-CDMA, multi-stage)
Average Output Power — 4 W (W-CDMA, 28 V)
Power Gain (Min) — 15 dB
Drain Supply Voltage — 24 V to 32 V (28 V typical)
Spurious Emissions — Below -60 dBc from 100 mW to 10 W CW Pout
On-Chip Matching — Yes (input 50 ohm DC-blocked, partial output)
Quiescent Current Compensation — Integrated with temperature compensation
Enable Function — Yes
Operating Modulation Formats — W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier

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