MW7IC2240NBR1 vs MW7IC2240NR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2240NBR1 par NXP Semiconductors et MW7IC2240NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MW7IC2240NBR1 | MW7IC2240NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $29,00 | $13,16 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | — |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | 5:1 |
| Output VSWR | 5:1 | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) | 50 ohm (DC-blocked input, >3 ohm output) |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | LDMOS (Laterally Diffused MOSFET) |
| Boîtier | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-270 WBL-16 (TO-270WB16), 16-pin ceramic |
| Type de montage | Surface Mount | Surface Mount / flange mount with ground pad |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Fonction | — | RF Power Amplifier (W-CDMA, multi-stage) |
| Average Output Power | — | 4 W (W-CDMA, 28 V) |
| Power Gain (Min) | — | 15 dB |
| Drain Supply Voltage | — | 24 V to 32 V (28 V typical) |
| Spurious Emissions | — | Below -60 dBc from 100 mW to 10 W CW Pout |
| On-Chip Matching | — | Yes (input 50 ohm DC-blocked, partial output) |
| Quiescent Current Compensation | — | Integrated with temperature compensation |
| Enable Function | — | Yes |
| Operating Modulation Formats | — | W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier |