MW7IC2240NBR1 vs MW7IC2240NR1 Comparação
Comparação detalhada lado a lado de MW7IC2240NBR1 por NXP Semiconductors e MW7IC2240NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MW7IC2240NBR1 | MW7IC2240NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Obsolete | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $29,00 | $13,16 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | — |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | 5:1 |
| Output VSWR | 5:1 | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) | 50 ohm (DC-blocked input, >3 ohm output) |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | LDMOS (Laterally Diffused MOSFET) |
| Encapsulamento | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-270 WBL-16 (TO-270WB16), 16-pin ceramic |
| Tipo de montagem | Surface Mount | Surface Mount / flange mount with ground pad |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Função | — | RF Power Amplifier (W-CDMA, multi-stage) |
| Average Output Power | — | 4 W (W-CDMA, 28 V) |
| Power Gain (Min) | — | 15 dB |
| Drain Supply Voltage | — | 24 V to 32 V (28 V typical) |
| Spurious Emissions | — | Below -60 dBc from 100 mW to 10 W CW Pout |
| On-Chip Matching | — | Yes (input 50 ohm DC-blocked, partial output) |
| Quiescent Current Compensation | — | Integrated with temperature compensation |
| Enable Function | — | Yes |
| Operating Modulation Formats | — | W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier |