MW7IC2240NBR1 vs MW7IC2240NR1 对比
详细并排对比 MW7IC2240NBR1 出自 NXP Semiconductors 和 MW7IC2240NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MW7IC2240NBR1 | MW7IC2240NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | RF Amplifiers | RF Amplifiers |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $29.00 | $13.16 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | — |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | 5:1 |
| Output VSWR | 5:1 | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) | 50 ohm (DC-blocked input, >3 ohm output) |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | LDMOS (Laterally Diffused MOSFET) |
| 封装 | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-270 WBL-16 (TO-270WB16), 16-pin ceramic |
| 安装类型 | Surface Mount | Surface Mount / flange mount with ground pad |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | — |
| 功能 | — | RF Power Amplifier (W-CDMA, multi-stage) |
| Average Output Power | — | 4 W (W-CDMA, 28 V) |
| Power Gain (Min) | — | 15 dB |
| Drain Supply Voltage | — | 24 V to 32 V (28 V typical) |
| Spurious Emissions | — | Below -60 dBc from 100 mW to 10 W CW Pout |
| On-Chip Matching | — | Yes (input 50 ohm DC-blocked, partial output) |
| Quiescent Current Compensation | — | Integrated with temperature compensation |
| Enable Function | — | Yes |
| Operating Modulation Formats | — | W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier |