NTMFS4C324NT1G vs BSC010NE2LSIATMA1 Comparación
Comparación detallada lado a lado de NTMFS4C324NT1G por onsemi y BSC010NE2LSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | NTMFS4C324NT1G | BSC010NE2LSIATMA1 |
|---|---|---|
| Marca | onsemi | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,92 |
| Manufacturer | onsemi | Infineon Technologies |
| Part Number | NTMFS4C324NT1G | — |
| Technology | TRENCH 6 N-Channel MOSFET | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max value] | — |
| Continuous Drain Current (ID) at Tc | 136 A | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Pulsed Drain Current (IDM) | 352 A | — |
| Rds(on) at VGS=10V | 1.7 mΩ typical | — |
| Single Pulse Avalanche Energy (EAS) | 549 mJ | — |
| Power Dissipation at Ta | 3.1 W | — |
| Power Dissipation at Tc | 64 W | — |
| Encapsulado | 5-DFN (5x6 mm), SO-8FL equivalent | PG-TDSON-8-7 (TDSON-8 EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max value] | -55C to +150C (TJ) |
| Estado RoHS | Compliant | Compliant |
| Tape and Reel Quantity | 1500 pcs | — |
| Series / Family | — | OptiMOS 25V |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Recuento de pines | — | 8 |
| Gate Drive | — | Logic-level compatible |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |