H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK Hynix
N.º de pieza: H5AN8G6NCJR-VKC ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $42.34 | $42,34 |
| 10 | $40.22 | $402,20 |
| 100 | $38.11 | $3.811,00 |
| 500 | $36.2 | $18.100,00 |
| 1.000 | $35.16 | $35.160,00 |
H5AN8G6NCJR-VKC Descripción general
A DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory IC that transfers data on both rising and falling clock edges, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> semiconductor memory. DDR4 doubles the bandwidth of DDR3 while lowering operating voltage from 1.5V to 1.2V, making it the dominant main-memory technology for computing and embedded systems.
Key features of the H5AN8G6NCJR-VKC include the 8 Gbit density organized as 512 megawords x 16 bits, a 1.333 GHz clock rate delivering 2666 MT/s bandwidth per pin, and low operating currents (28 mA standby typical, 45 mA operating per JLCPCB data). The x16 organization with data-mask support simplifies byte-lane designs in embedded processors that lack full 64-bit memory controllers.
Architecturally, the device is a CMOS DDR4 SDRAM from SK Hynix's H5AN8G6NCJR family (8Gb x16 -xxC speed grade), implementing bank-group architecture, programmable CAS latency, and dynamic ODT to maintain signal integrity at high data rates. ZQ calibration keeps output driver impedance accurate across temperature and voltage drift.
Typical applications include embedded main memory for industrial PCs, networking equipment, set-top boxes, automotive infotainment (commercial temperature 0C to +95C), and memory modules requiring high density in a compact footprint.
Design consideration: DDR4 signal integrity at 2666 Mbps requires length-matched fly-by routing of the clock and command/address bus, and proper termination per the memory controller's ODT settings; power distribution should target the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling capacitors.
This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone. Pricing references are as of 2026-09-04.
Alternativas directas para H5AN8G6NCJR-VKC — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5AN8G6NCJR-VKC (mismo factor de forma y huella) — difiere en Package, Interface, Memory Organization, Memory Size, Data Rate.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5AN8G6NCJR-UHC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
Consulte el precio
Ver hoja de datos →H5AN8G6NCJR-RDC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$19.6875 / unidad
Ver hoja de datos →H5AN8G6NCJR-PBC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$3.3 / unidad
Ver hoja de datos →H5AN8G8NCJR-VKI
✅ Sustitución directa✓ En stock
$4.85 / unidad
Ver hoja de datos →K4A8G165WB-BCRC
✅ Sustitución directa✓ En stock
$12.57 / unidad
Ver hoja de datos →MT40A1G8SA-075E
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
H5AN8G6NCJR-VKC Especificaciones
| Tipo de memoria | DDR4 SDRAM |
| Tamaño de memoria | 8 Gbit |
| Memory Organization | 512M x 16 |
| Velocidad de datos | 2666 Mbps (MT/s) |
| Clock Frequency | 1.333 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V |
| Interfaz | Parallel |
| Temperatura de funcionamiento | 0C to +95C |
| Encapsulado | FBGA-96 |
| Tipo de montaje | Surface Mount |
| Standby Current | 28 mA |
| Operating Current | 45 mA |
| Características | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | Yes (per datasheet description) |
| Estado RoHS | Compliant |
| Estado del ciclo de vida | Active |
Guía de configuración de pines de H5AN8G6NCJR-VKC fbga-96
Configuración de pines para H5AN8G6NCJR-VKC (encapsulado fbga-96). La numeración de pines, las funciones y los diagramas de conexión se definen en la hoja de datos del fabricante. Consúltela para conocer el footprint exacto y las directrices de soldadura.
No hay datos detallados de patillaje disponibles para H5AN8G6NCJR-VKC.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
H5AN8G6NCJR-VKC es adecuado para 6 aplicacións: Embedded Industrial Computing, Networking Equipment, Set-Top Boxes and Smart TV, Automotive Infotainment (Commercial Temp), Test and Measurement Instruments, Memory Modules and SODIMM Designs.
Embedded Industrial Computing
Industrial PCs, edge controllers, and HMI platforms use the H5AN8G6NCJR-VKC as main memory because its 8Gb density and 2666 Mbps data rate deliver the bandwidth that Linux- and RTOS-class processors demand, while the 1.14V-1.26V rail keeps system power low versus DDR3. The x16 organization pairs naturally with mid-range MPUs offering 16- or 32-bit DDR controllers, letting one or two chips reach 1-2 GB without a full 64-bit bus. In a typical layout the device sits within 50-80 mm of the controller with fly-by clock/address routing and dynamic ODT handling termination. Because it is rated 0C to +95C, it suits cabinet-enclosed industrial environments; designs requiring extended cold start should validate the lower temperature limit.
Recomendado
Networking Equipment
Switches, routers, and network-attached appliances rely on the H5AN8G6NCJR-VKC to buffer packets and hold control-plane code. The 2666 Mbps pin rate supports multi-gigabit line-rate buffering when combined with packet processors, and CRC plus write-leveling features maintain data integrity across the high-speed interface. A common topology mounts four to eight devices on a 64-bit or 128-bit bus, where dynamic on-die termination reduces the external termination component count versus DDR3. The 0C to +95C range fits centrally located, fan-cooled networking chassis. Designers should budget refresh overhead (about 4-6% at extended temperature) when sizing buffer depths, and verify ZQ calibration resistor placement within 10 mm of the ZQ ball per the datasheet.
Recomendado
Set-Top Boxes and Smart TV
Broadcast and streaming set-top boxes use the H5AN8G6NCJR-VKC as the primary memory for SoC-based video decode platforms. Its 8Gb capacity comfortably holds dual 4K stream buffers plus an Android/Linux software stack, and the x16 interface matches the 16/32-bit DDR controllers common in consumer SoCs, minimizing chip count and cost. The 1.2V-class supply helps products meet regional standby-power regulations, and auto self-refresh lowers power during suspend states. At 2666 Mbps the shared bus sustains decode, graphics, and network traffic concurrently when the controller is configured with appropriate QoS arbitration. Board designers should length-match DQ/DQS pairs within +/-25 mils and follow the SoC vendor's DDR4 layout checklist for the fly-by address bus.
Recomendado
Automotive Infotainment (Commercial Temp)
In-cabin infotainment and digital-cluster platforms with controlled temperature environments can use the H5AN8G6NCJR-VKC where its 0C to +95C range is acceptable. The 8Gb x16 device feeds SoCs driving multiple displays, and the 2666 Mbps bandwidth supports smooth graphics compositing and navigation rendering. DDR4's lower 1.2V rail reduces heat inside sealed dashboard enclosures compared with DDR3 solutions. Note that this part is not AEC-Q100 qualified per available data; production automotive programs should confirm acceptance with the OEM or select an automotive-graded SKU. Layout guidance includes keeping the memory within 60 mm of the SoC, using solid reference planes for DQ routing, and enabling the asynchronous RESET# function so the cluster recovers cleanly from crank-related supply transients.
Recomendado
Test and Measurement Instruments
Bench instruments, data-acquisition units, and logic analyzers use the H5AN8G6NCJR-VKC to hold long capture buffers and run embedded analysis software. The 8Gb density enables deep sample memory, while the 2666 Mbps interface keeps DMA transfers from becoming the acquisition bottleneck. CRC and write-leveling features improve capture integrity at speed, which matters when customers compare waveform fidelity across instruments. The device's asynchronous reset supports deterministic recovery after firmware faults, and dynamic ODT simplifies multi-load buses when two to four devices share a 64-bit controller. Designers should verify refresh scheduling against real-time capture deadlines and decouple each VDD ball group with at least 0.1 uF plus bulk capacitance to suppress current transients during burst writes.
Recomendado
Memory Modules and SODIMM Designs
Custom SODIMMs and soldered-down memory mezzanines built around the H5AN8G6NCJR-VKC benefit from the JEDEC-standard x16 FBGA-96 ball map, which is shared across SK Hynix, Samsung, and Micron DDR4 x16 components, enabling multi-sourcing on one PCB footprint. A typical 64-bit module uses eight x16 devices for 8 GB total; down-populating four devices yields a 4 GB option on the same board. The 2666 Mbps grade supports mainstream DDR4-2666 host platforms, and the 0C to +95C range covers office and light-industrial module environments. For module designs, follow JEDEC reference layout rules for fly-by CA routing, series termination on clock nets, and per-device ZQ resistors; the data-mask function supports write masking on module-level controllers that require it.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5AN8G6NCJR-VKC — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5AN8G6NCJR-UHC | H5AN8G6NCJR-RDC | H5AN8G6NCJR-PBC | H5AN8G8NCJR-VKI | K4A8G165WB-BCRC |
|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 1G x 8 | 512M x 16 |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| ECC Support (x8 for sideband ECC) | No (x16 uses data mask) | No (x16) | No (x16) | No (x16) | Yes (x8 organization) | No (x16) |
Diferenciadores clave
- Fast 2666 Mbps speed grade with wide distributor availability (frente a H5AN8G6NCJR-PBC)
- x16 organization minimizes chip count (frente a H5AN8G8NCJR-VKI)
- JEDEC-standard footprint enables Samsung second source (frente a K4A8G165WB-BCRC)
Notas de diseño
At 2666 Mbps, DDR4 routing discipline is non-negotiable: route DQ/DQS/DM as length-matched groups (typical spec +/-10 mils intra-byte, DQS to its DQ group within +/-25 mils), and use fly-by topology for clock/address/command with 30-60 ohm controlled impedance. Enable write leveling and dynamic ODT in the controller; the H5AN8G6NCJR-VKC supports both per its feature list. Keep the ZQ calibration resistor (240 ohm, 1%) within 10 mm of the ZQ ball with a direct ground return. Simulate with IBIS models from SK Hynix before finalizing stackup.
The device runs from a 1.14V-1.26V VDD rail with typical standby current of 28 mA and operating current of 45 mA per distributor data, but burst activity produces fast current transients. Estimated: for an 8-chip x16 bus peaking near 1 A total, a PDN targeting under 30 mV ripple requires bulk capacitance of roughly 100-330 uF (polymer or MLCC mix) plus at least one 0.1 uF MLCC per VDD ball group placed within 2 mm. Verify the VRM meets the DDR4 controller's load-line requirement and sequence VPP/VDD per the JEDEC power-up ramp spec in the datasheet.
Common substitution mistakes: (1) assuming the x16 H5AN8G6NCJR-VKC directly replaces an x8 H5AN8G8NCJR - the 96-ball footprint matches but ball functions differ by JEDEC organization, so nets must be re-verified; (2) forgetting the asynchronous RESET# pin, which must be asserted during power ramp or the device may not initialize; (3) ignoring refresh overhead at high operating temperature - plan controller scheduling for tREFI changes above 85C. Always confirm the speed-grade suffix code matches your controller's configured timing table before assembly.
Información de cumplimiento
Datasheet description on ALLDATASHEET states Lead-Free & Halogen-Free; JLCPCB listing marks ROHS compliant. REACH and conflict-minerals status not stated in provided data.
