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H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

MPN: H5AN8G6NCJR-UHC ✓ Active
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1.2 V Vdss FBGA-96 (96-ball) Package DDR4-2400 (2400 Mbps/pin) Speed DDR4 SDRAM Memory
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Price updated: 2026-09-04
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Drop-in alternatives for H5AN8G6NCJR-UHC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G6NDJR-UHC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (PC4-25600) · 1.2 V · 1.2 V · 96 · FBGA-96 (13x7.5 mm)

✓ In Stock

$34.6 / Unit

View Datasheet →

H5AN8G6NCJR-VKC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps · 1.2 V (1.14V to 1.26V) · 0°C to +95°C · FBGA-96 · 28 mA

✓ In Stock

$60 / Unit

View Datasheet →

H5AN8G6NAFR-UHC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · 2400 MT/s · FBGA-96 · 0°C to +85°C · 96

✓ In Stock

$0.12 / Unit

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H5AN8G6NCJR-RDC

✅ Drop-In
SK hynix
📦 FBGA-96
8 Gb (8589934592 bit) · 512M x 16 · DDR4 SDRAM · CMOS · TFBGA (PBGA96) · Rectangular · 96 · Surface Mount

✓ In Stock

$2.85 / Unit

View Datasheet →

H5AN8G6NCJR-PBC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8Gb x16 (512M x 16) · 8 Gbit · [DATA_NEEDED: exact speed grade of -PBC suffix] · Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) · 1.2 V · FBGA-96 (96-ball fine-pitch BGA) · Surface Mount

✓ In Stock

$3.3 / Unit

View Datasheet →

H5AN8G6NCJR-UHC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gb
Organization 512M x 16
Speed Grade DDR4-2400 (2400 Mbps/pin)
Supply Voltage 1.2 V
Package FBGA-96 (96-ball)
Mounting Type Surface Mount (BGA)
Operating Temperature 0C to +95C
Auto Self-Refresh Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask (DM) Yes
Write Leveling Yes
CRC Function Yes
Dynamic On-Die Termination Yes
ZQ Calibration Yes
Lead-Free / Halogen-Free Yes (per family datasheet)

H5AN8G6NCJR-UHC fbga-96 (96-ball) Pin Configuration Guide

Complete pinout information for H5AN8G6NCJR-UHC (fbga-96 (96-ball) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-96 (96-ball) package pinout diagram for H5AN8G6NCJR-UHC

No detailed pinout data available for H5AN8G6NCJR-UHC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN8G6NCJR-UHC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G6NCJR-UHC is suitable for 6 applications: Industrial Controller Main Memory, Embedded Computing Modules (COM/SOM), Network Appliance Packet Buffering, Firmware Logging and Data Acquisition, Replacement Sourcing / BOM Continuity, Automotive-adjacent and Display Compute (non-safety).

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Industrial Controller Main Memory

The H5AN8G6NCJR-UHC serves as main system DRAM in PLCs, motion controllers, and industrial gateways that run embedded Linux or RTOS images too large for on-chip SRAM. Its 8Gb (1 GB) density in a single x16 device lets a controller achieve a 16-bit or 32-bit DDR4 bus with one or two packages, reducing layer count and trace count on dense industrial boards. The 0C to +95C operating range with automatic self-refresh covers unventilated cabinet environments, and the 1.2 V DDR4 interface cuts memory-subsystem power versus DDR3 by roughly 20 percent. Layout must follow the controller vendor's fly-by or point-to-point DDR4 routing guide, including ZQ calibration resistor placement and VTT termination, to sustain the full 2400 Mbps/pin data rate.

🖥️

Embedded Computing Modules (COM/SOM)

Computer-on-modules and system-on-modules use the H5AN8G6NCJR-UHC as soldered-down main memory, replacing SO-DIMM sockets for shock, vibration, and height savings. The single-package 8Gb x16 organization lets a module designer populate 1 GB or 2 GB configurations on a credit-card-sized substrate, and the FBGA-96 footprint is compatible across the NCJR/NDJR/NAFR speed bins for sourcing flexibility over a multi-year module lifecycle. At DDR4-2400, the x16 device delivers up to 4.8 GB/s per package peak bandwidth, sufficient for HMI rendering, protocol conversion, and edge analytics workloads. Memory controller training should be re-run whenever a different speed bin or die revision is fitted, and SPD-like configuration tables in the module bootloader must list every qualified MPN.

🌐

Network Appliance Packet Buffering

Routers, switches, and industrial firewalls use DDR4 SDRAM as deep packet buffers, flow tables, and log storage. The H5AN8G6NCJR-UHC provides 1 GB per x16 package, and its bank-group architecture sustains back-to-back accesses across bank groups at the full 2400 Mbps bus rate, which matters when the memory must absorb bursts at line rate. CRC and data-mask features offload link integrity and partial-write handling from the CPU. Designers commonly pair two packages for a 32-bit bus, doubling effective bandwidth while sharing a common address/command bus. The asynchronous RESET_n function allows a management controller to recover the DRAM after a watchdog event without a full board power cycle, improving availability figures in unattended network cabinets.

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Firmware Logging and Data Acquisition

Test instruments, data loggers, and medical diagnostic devices buffer acquisition streams in DDR4 before committing to flash. The H5AN8G6NCJR-UHC's 8Gb capacity holds roughly 1 GB of samples, and its data-mask function lets the host write only valid frame regions without read-modify-write cycles, improving sustained write throughput. Auto precharge reduces command overhead for the sequential streaming typical of acquisition buffers. The 1.2 V supply and modest self-refresh current help battery-powered instruments extend sleep endurance, since the DRAM can hold the buffer during short idle windows. Designers should size the bulk decoupling on the VDD and VTT rails for burst current and follow the datasheet ZQ calibration requirement (external precision resistor) to keep output driver impedance within spec across temperature.

🧩

Replacement Sourcing / BOM Continuity

Many legacy industrial and networking boards specify the H5AN8G6NCJR-UHC, and buyers facing shortages can fill BOM lines with the pin-compatible family variants documented on this page. The H5AN8G6NDJR-UHC (3200 Mbps) and H5AN8G6NCJR-VKC (2666 Mbps) are faster bins of the same die family and drop directly onto the same FBGA-96 land pattern with the controller configured at 2400-compatible timings. Procurement should demand date codes, traceability, and warranty terms - channels such as Sourcengine offer factory-direct or authorized stock with 3-year warranty - because DRAM is a common target for re-marking. Always re-run memory training after fitting any substitute and record the qualified alternate MPNs in the bootloader configuration table for factory consistency.

📺

Automotive-adjacent and Display Compute (non-safety)

Infotainment-adjacent units, digital signage players, and dashboard-adjacent compute modules (non-safety domains) use the H5AN8G6NCJR-UHC where DDR4-2400 bandwidth is sufficient for video decode buffers and graphics frame stores. A single x16 package streams up to 4.8 GB/s peak, adequate for 1080p-class decode pipelines, while the 8Gb density accommodates double-buffered framebuffers plus application memory. The dynamic on-die termination feature helps signal integrity when the DRAM sits several centimeters from the SoC on a display PCB with limited layer count. Note that this standard-temperature part is not AEC-Q100 qualified; automotive safety or severe-temperature programs must instead select an automotive-qualified DRAM family from the manufacturer's automotive catalog.

What is the SK Hynix H5AN8G6NCJR-UHC?
The H5AN8G6NCJR-UHC is an 8Gb DDR4 SDRAM from SK Hynix organized as 512M x 16 and binned for the DDR4-2400 speed grade at a 1.2 V supply. It comes in a 96-ball FBGA package and supports the full DDR4 feature set including auto self-refresh, write leveling, CRC, dynamic ODT, and ZQ calibration, making it suited to embedded main-memory designs.
What are the key specifications of H5AN8G6NCJR-UHC that engineers should know?
Key specifications: 8 Gb density organized 512M x 16 (x16 data width), DDR4-2400 data rate (2400 Mbps per pin), 1.2 V VDD supply, 96-ball FBGA package, and 0C to +95C operating range. Feature set includes auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic on-die termination, and ZQ calibration. These figures come from the SK Hynix DDR4-2400 512Mx16 (8Gb) product datasheet.
What is the best drop-in replacement for H5AN8G6NCJR-UHC?
The closest same-brand drop-in is the H5AN8G6NDJR-UHC, an 8Gb DDR4-3200 part that is pin-compatible in the same FBGA-96 footprint; it simply runs at a faster speed bin and can be down-clocked to 2400 Mbps. The H5AN8G6NAFR-UHC is another same-speed 8Gb option; verify organization and die revision against your memory controller timing configuration before swapping.
Can H5AN8G6NCJR-VKC replace H5AN8G6NCJR-UHC?
Yes, in most designs. The H5AN8G6NCJR-VKC is the same 8Gb 512Mx16 DDR4 die family in the same FBGA-96 package but binned at DDR4-2666 instead of DDR4-2400. A faster bin can always replace a slower bin when the memory controller is configured with 2400-compatible timings. Confirm the -VKC operating temperature class and refresh behavior (LCSC lists 0C to +95C with auto self-refresh) against your environment.
Is H5AN8G6NCJR-UHC the same as Samsung K4A8G165WC?
No - they are competing equivalents, not the same part. The K4A8G165WC series is Samsung's 8Gb x16 DDR4 in a comparable FBGA-96 footprint, and Samsung-to-SK Hynix swaps are common second-sourcing practice, but pin map, timing registers, and SPD configuration must be re-verified against the controller. Treat a cross-brand swap as a validated second source, not a blind drop-in, and re-run memory training after replacement.
What is the operating voltage of H5AN8G6NCJR-UHC?
The H5AN8G6NCJR-UHC operates from a 1.2 V supply, the standard JEDEC DDR4 core voltage (VDD), with matching 1.2 V VDDQ for I/O. This is a reduction from DDR3's 1.5 V and is a major reason DDR4 lowers system power. Verify exact VDD/VDDQ/VPP ranges in the SK Hynix datasheet before finalizing power-rail tolerances.
Where to download the H5AN8G6NCJR-UHC datasheet PDF?
The H5AN8G6NCJR-UHC datasheet is available through datasheet repositories such as Datasheet Directory (datasheets.globalspec.com), Alldatasheet, and DigChip, which host the SK Hynix DDR4-2400 512Mx16 (8Gb) document. For the authoritative latest revision, request it directly from SK Hynix or your authorized distributor, since SK Hynix reserves the right to change products or specifications without notice.
Where can I find the H5AN8G6NCJR-UHC pinout / ball map?
The full 96-ball FBGA ball map for the H5AN8G6NCJR-UHC is published in the SK Hynix DDR4 x16 datasheet, in the ball-out section (it includes the standard DDR4 x16 signals: DQ0-DQ15, DQS_t/DQS_c pairs, DM, address/command, RESET_n, and power balls). A public machine-readable ball map is not reproduced on this page; download the official PDF and cross-check against your layout netlist.
What is the price of H5AN8G6NCJR-UHC?
Pricing for the H5AN8G6NCJR-UHC is quote-based: SK Hynix DRAM components are typically sold through authorized distributors and open-market channels (Sourcengine, netCOMPONENTS, WIN Source, Ariat-Tech) where stock and price fluctuate with the DRAM spot market. As of 2026-09-04, no fixed unit pricing is published on this page - submit an RFQ with your quantity for a current quotation.
Where to buy H5AN8G6NCJR-UHC online?
You can buy H5AN8G6NCJR-UHC from distributor channels including Sourcengine (factory-direct or authorized stock with 3-yr warranty), WIN Source, Ariat-Tech (lists new and original in stock), OMO Electronic, and netCOMPONENTS, which aggregates 50M+ line items worldwide. Always request date codes and traceability documentation, since DRAM components are frequently re-marked on the open market.
What is the lead time for H5AN8G6NCJR-UHC?
Lead time varies by channel: distributors holding stock (e.g., Ariat-Tech lists in-stock availability) can ship in days, while factory-direct allocation typically runs 8 to 16 weeks for DDR4 components depending on DRAM market conditions. As of 2026-09-04, confirm current stock and delivery by RFQ, because DRAM lead times swing significantly with demand cycles.
Is H5AN8G6NCJR-UHC suitable for industrial controllers?
Yes. Product overviews position this part for industrial controllers, computing modules, and embedded logging, thanks to its 0C to +95C operating range and auto self-refresh. For industrial designs, the x16 organization simplifies the memory bus (16-bit per device), and the 1.2 V DDR4 interface reduces power versus DDR3. Ensure your PCB layout follows the DDR4 routing and termination guidelines in the controller vendor's design guide.
H5AN8G6NCJR-UHC vs H5AN8G6NDJR-UHC - which is better?
For a DDR4-2400 design, either works; the H5AN8G6NDJR-UHC is binned at 3200 Mbps and is over-specified but future-proof, while the NCJR-UHC matches a 2400 Mbps controller directly. Both are 8Gb x16 in the same FBGA-96 footprint. Choose the NCJR when cost matters at exact spec, and the NDJR when you may later upgrade the memory clock or want easier sourcing of the faster bin.
When should I choose the x16 H5AN8G6NCJR over x8 variants like H5AN8G8NCJR?
Choose the x16 (G6 = 512M x16) version when your memory controller has a 16-bit bus or when you want fewer devices per 32-bit channel, which reduces BGA count, routing layers, and BOM lines. Choose the x8 H5AN8G8NCJR variants when you need 8-bit ECC-friendly granularity or your controller requires x8 DIMM-style organization. Both share the same density class and DDR4 protocol.
Is H5AN8G6NCJR-UHC lead-free and RoHS compliant?
Family documentation for the H5AN8G6NCJR series lists lead-free and halogen-free construction, and SK Hynix DRAM production is generally RoHS compliant. However, a part-number-specific RoHS/REACH certificate should be requested from SK Hynix or your distributor for formal compliance files, as this page does not carry a verified certificate reference. Do not assume compliance status without the certificate in regulated industries.
Hey Google, what can replace H5AN8G6NCJR-UHC in my BOM?
Pin-compatible replacements within the same SK Hynix 8Gb DDR4 x16 FBGA-96 family include H5AN8G6NDJR-UHC (3200 Mbps), H5AN8G6NCJR-VKC (2666 Mbps), and H5AN8G6NAFR-UHC (2400 Mbps class). Slower same-package bins (RDC, PBC grades) exist but only replace designs clocked at or below their bin. Cross-brand equivalents (Samsung K4A8G165WC series) require re-validation of the ball map and memory training.
Is H5AN8G6NCJR-UHC still in production?
The part is currently listed as active and available through distributor channels as of 2026-09-04, but the DDR4 generation is a mature product line and DRAM makers progressively allocate capacity toward DDR5. For long-life industrial programs, qualify at least one second source now (e.g., the faster NDJR/VKC bins) and monitor SK Hynix PCN notifications for any end-of-life announcements.

Engineering reference data for H5AN8G6NCJR-UHC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN8G6NCJR-UHC when your memory controller is certified for DDR4-2400 and you want the exact-spec, typically lowest-cost 8Gb x16 device in the SK Hynix family. Choose the H5AN8G6NCJR-VKC or H5AN8G6NDJR-UHC when sourcing risk matters: both are faster bins of the same die in the same FBGA-96 footprint and cover all 2400 timings with headroom, giving you two extra qualified line items for shortage situations. Choose the H5AN8G6NAFR-UHC when you need same-speed volume from a different die revision. Only choose the slower RDC/PBC bins if your design is clocked at or below 2133/1866 Mbps. Cross-brand equivalents (e.g., Samsung 8Gb x16 DDR4) share the density class but require ball-map and memory-training re-validation - treat them as second sources to qualify, not blind drop-ins. Trade-off summary: exact-spec saves cost, faster bins save qualification and shortage risk.

Comparison with Alternatives

Parameter This Product H5AN8G6NDJR-UHC H5AN8G6NCJR-VKC H5AN8G6NAFR-UHC H5AN8G6NCJR-RDC
Package FBGA-96 FBGA-96 - same FBGA-96 - same FBGA-96 - same FBGA-96 - same
Brand SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
Density / Organization 8 Gb / 512M x 16 8 Gb / 512M x 16 8 Gb / 512M x 16 8 Gb / 512M x 16 8 Gb / 512M x 16
Data Rate 2400 Mbps/pin 3200 Mbps/pin 2666 Mbps/pin 2400 Mbps/pin 2133 Mbps/pin class
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0C to +95C [DATA_NEEDED] 0C to +95C [DATA_NEEDED] [DATA_NEEDED]
Auto Self-Refresh Yes Yes Yes Yes Yes
Feature Set (CRC / Write Leveling / Dynamic ODT) Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes
Unit Price [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] (LCSC reference: from $35.16 for VKC stock line) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Exact-spec DDR4-2400 bin at typically lower cost than faster bins (vs H5AN8G6NDJR-UHC)
  • Guaranteed-headroom second source in the same footprint (vs H5AN8G6NCJR-VKC)
  • Newer-generation die revision at the same speed (vs H5AN8G6NAFR-UHC)

Design Notes

At 2400 Mbps/pin, DDR4 x16 routing demands length-matched DQS/DQ groups (intra-byte-lane skew typically held within +/-10 ps per controller guide) and fly-by or point-to-point address/command topology per the memory controller's design guide. The x16 device reduces DQ trace count to 16 plus one DQS pair per package, which eases routing on 4-layer boards, but keep the ZQ calibration resistor (240 ohm, 1 percent) connected to ZQ pin with a short, low-inductance path to ground; improper ZQ layout shifts output driver impedance and causes eye closures at speed.

Provide separate 1.2 V VDD and VDDQ rails with bulk (22-47 uF) plus per-ball high-frequency (0.1 uF) decoupling close to the package, and a VTT termination rail generated from a dedicated DDR termination regulator sized for the dynamic termination current. Estimated: at 2400 Mbps with typical activity factors, a single 8Gb x16 DDR4 device draws on the order of several hundred milliwatts - derive the exact budget from the datasheet IDD specifications for your access pattern, and derate the regulator for the transient burst current of bank-group interleaving.

Do not swap speed bins without re-running memory controller training: the -UHC (2400), -VKC (2666), and -NDJR (3200) bins are footprint-compatible, but each boots with different CAS/tRCD/tRP timing tables, and older bootloaders often hard-code a single MPN. Maintain a qualified-MPN list in firmware, honor the asynchronous RESET_n sequencing requirement (RESET_n must be asserted during power ramp), and only source through channels offering date codes and traceability - DRAM is frequently re-marked on the open market.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Family documentation (Alldatasheet entry) lists Lead-Free & Halogen-Free construction for the H5AN8G6NCJR series. Part-number-specific RoHS/REACH/conflict-minerals certificates were not present in the provided web data and must be requested from SK Hynix.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK Hynix H5AN8G6NCJR-UHC H5AN8G6NDJR-UHC H5AN8G6NCJR-VKC H5AN8G6NAFR-UHC DDR4 SDRAM Double Data Rate IV synchronous DRAM DRAM FBGA-96 ball grid array JEDEC DDR4-2400 1.2 V VDD on-die termination ZQ calibration write leveling auto self-refresh 512M x 16 organization industrial controller main memory embedded computing module Lead-Free / Halogen-Free memory controller training
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