H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK Hynix
料号： H5AN8G6NCJR-VKC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $42.34 | $42.34 |
| 10 | $40.22 | $402.20 |
| 100 | $38.11 | $3,811.00 |
| 500 | $36.2 | $18,100.00 |
| 1,000 | $35.16 | $35,160.00 |
H5AN8G6NCJR-VKC 概述
A DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory IC that transfers data on both rising and falling clock edges, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> semiconductor memory. DDR4 doubles the bandwidth of DDR3 while lowering operating voltage from 1.5V to 1.2V, making it the dominant main-memory technology for computing and embedded systems.
Key features of the H5AN8G6NCJR-VKC include the 8 Gbit density organized as 512 megawords x 16 bits, a 1.333 GHz clock rate delivering 2666 MT/s bandwidth per pin, and low operating currents (28 mA standby typical, 45 mA operating per JLCPCB data). The x16 organization with data-mask support simplifies byte-lane designs in embedded processors that lack full 64-bit memory controllers.
Architecturally, the device is a CMOS DDR4 SDRAM from SK Hynix's H5AN8G6NCJR family (8Gb x16 -xxC speed grade), implementing bank-group architecture, programmable CAS latency, and dynamic ODT to maintain signal integrity at high data rates. ZQ calibration keeps output driver impedance accurate across temperature and voltage drift.
Typical applications include embedded main memory for industrial PCs, networking equipment, set-top boxes, automotive infotainment (commercial temperature 0C to +95C), and memory modules requiring high density in a compact footprint.
Design consideration: DDR4 signal integrity at 2666 Mbps requires length-matched fly-by routing of the clock and command/address bus, and proper termination per the memory controller's ODT settings; power distribution should target the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling capacitors.
This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone. Pricing references are as of 2026-09-04.
直接替换替代料： H5AN8G6NCJR-VKC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G6NCJR-VKC （相同外形与封装尺寸） ——差异在于 Package, Interface, Memory Organization, Memory Size, Data Rate.
快速对比工具——选择替代料号进行并排对比：
H5AN8G6NCJR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →H5AN8G6NCJR-RDC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$19.6875 / 个
查看数据手册 →H5AN8G6NCJR-PBC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.3 / 个
查看数据手册 →H5AN8G8NCJR-VKI
✅ 直接替换✓ 有现货
$4.85 / 个
查看数据手册 →K4A8G165WB-BCRC
✅ 直接替换✓ 有现货
$12.57 / 个
查看数据手册 →MT40A1G8SA-075E
✅ 直接替换📋 参考替代料（不在目录中）
H5AN8G6NCJR-VKC 规格参数
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit |
| Memory Organization | 512M x 16 |
| 数据速率 | 2666 Mbps (MT/s) |
| Clock Frequency | 1.333 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V |
| 接口 | Parallel |
| 工作温度 | 0C to +95C |
| 封装 | FBGA-96 |
| 安装类型 | Surface Mount |
| Standby Current | 28 mA |
| Operating Current | 45 mA |
| 特性 | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | Yes (per datasheet description) |
| RoHS 状态 | Compliant |
| 生命周期状态 | Active |
H5AN8G6NCJR-VKC fbga-96 引脚配置指南
H5AN8G6NCJR-VKC（fbga-96 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： H5AN8G6NCJR-VKC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G6NCJR-VKC 适用于 6 应用s: Embedded Industrial Computing, Networking Equipment, Set-Top Boxes and Smart TV, Automotive Infotainment (Commercial Temp), Test and Measurement Instruments, Memory Modules and SODIMM Designs.
Embedded Industrial Computing
Industrial PCs, edge controllers, and HMI platforms use the H5AN8G6NCJR-VKC as main memory because its 8Gb density and 2666 Mbps data rate deliver the bandwidth that Linux- and RTOS-class processors demand, while the 1.14V-1.26V rail keeps system power low versus DDR3. The x16 organization pairs naturally with mid-range MPUs offering 16- or 32-bit DDR controllers, letting one or two chips reach 1-2 GB without a full 64-bit bus. In a typical layout the device sits within 50-80 mm of the controller with fly-by clock/address routing and dynamic ODT handling termination. Because it is rated 0C to +95C, it suits cabinet-enclosed industrial environments; designs requiring extended cold start should validate the lower temperature limit.
推荐
Networking Equipment
Switches, routers, and network-attached appliances rely on the H5AN8G6NCJR-VKC to buffer packets and hold control-plane code. The 2666 Mbps pin rate supports multi-gigabit line-rate buffering when combined with packet processors, and CRC plus write-leveling features maintain data integrity across the high-speed interface. A common topology mounts four to eight devices on a 64-bit or 128-bit bus, where dynamic on-die termination reduces the external termination component count versus DDR3. The 0C to +95C range fits centrally located, fan-cooled networking chassis. Designers should budget refresh overhead (about 4-6% at extended temperature) when sizing buffer depths, and verify ZQ calibration resistor placement within 10 mm of the ZQ ball per the datasheet.
推荐
Set-Top Boxes and Smart TV
Broadcast and streaming set-top boxes use the H5AN8G6NCJR-VKC as the primary memory for SoC-based video decode platforms. Its 8Gb capacity comfortably holds dual 4K stream buffers plus an Android/Linux software stack, and the x16 interface matches the 16/32-bit DDR controllers common in consumer SoCs, minimizing chip count and cost. The 1.2V-class supply helps products meet regional standby-power regulations, and auto self-refresh lowers power during suspend states. At 2666 Mbps the shared bus sustains decode, graphics, and network traffic concurrently when the controller is configured with appropriate QoS arbitration. Board designers should length-match DQ/DQS pairs within +/-25 mils and follow the SoC vendor's DDR4 layout checklist for the fly-by address bus.
推荐
Automotive Infotainment (Commercial Temp)
In-cabin infotainment and digital-cluster platforms with controlled temperature environments can use the H5AN8G6NCJR-VKC where its 0C to +95C range is acceptable. The 8Gb x16 device feeds SoCs driving multiple displays, and the 2666 Mbps bandwidth supports smooth graphics compositing and navigation rendering. DDR4's lower 1.2V rail reduces heat inside sealed dashboard enclosures compared with DDR3 solutions. Note that this part is not AEC-Q100 qualified per available data; production automotive programs should confirm acceptance with the OEM or select an automotive-graded SKU. Layout guidance includes keeping the memory within 60 mm of the SoC, using solid reference planes for DQ routing, and enabling the asynchronous RESET# function so the cluster recovers cleanly from crank-related supply transients.
推荐
Test and Measurement Instruments
Bench instruments, data-acquisition units, and logic analyzers use the H5AN8G6NCJR-VKC to hold long capture buffers and run embedded analysis software. The 8Gb density enables deep sample memory, while the 2666 Mbps interface keeps DMA transfers from becoming the acquisition bottleneck. CRC and write-leveling features improve capture integrity at speed, which matters when customers compare waveform fidelity across instruments. The device's asynchronous reset supports deterministic recovery after firmware faults, and dynamic ODT simplifies multi-load buses when two to four devices share a 64-bit controller. Designers should verify refresh scheduling against real-time capture deadlines and decouple each VDD ball group with at least 0.1 uF plus bulk capacitance to suppress current transients during burst writes.
推荐
Memory Modules and SODIMM Designs
Custom SODIMMs and soldered-down memory mezzanines built around the H5AN8G6NCJR-VKC benefit from the JEDEC-standard x16 FBGA-96 ball map, which is shared across SK Hynix, Samsung, and Micron DDR4 x16 components, enabling multi-sourcing on one PCB footprint. A typical 64-bit module uses eight x16 devices for 8 GB total; down-populating four devices yields a 4 GB option on the same board. The 2666 Mbps grade supports mainstream DDR4-2666 host platforms, and the 0C to +95C range covers office and light-industrial module environments. For module designs, follow JEDEC reference layout rules for fly-by CA routing, series termination on clock nets, and per-device ZQ resistors; the data-mask function supports write masking on module-level controllers that require it.
推荐
推荐产品汇总
工程参考数据： H5AN8G6NCJR-VKC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G6NCJR-UHC | H5AN8G6NCJR-RDC | H5AN8G6NCJR-PBC | H5AN8G8NCJR-VKI | K4A8G165WB-BCRC |
|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 1G x 8 | 512M x 16 |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| ECC Support (x8 for sideband ECC) | No (x16 uses data mask) | No (x16) | No (x16) | No (x16) | Yes (x8 organization) | No (x16) |
关键差异点
- Fast 2666 Mbps speed grade with wide distributor availability （对比 H5AN8G6NCJR-PBC)
- x16 organization minimizes chip count （对比 H5AN8G8NCJR-VKI)
- JEDEC-standard footprint enables Samsung second source （对比 K4A8G165WB-BCRC)
设计说明
At 2666 Mbps, DDR4 routing discipline is non-negotiable: route DQ/DQS/DM as length-matched groups (typical spec +/-10 mils intra-byte, DQS to its DQ group within +/-25 mils), and use fly-by topology for clock/address/command with 30-60 ohm controlled impedance. Enable write leveling and dynamic ODT in the controller; the H5AN8G6NCJR-VKC supports both per its feature list. Keep the ZQ calibration resistor (240 ohm, 1%) within 10 mm of the ZQ ball with a direct ground return. Simulate with IBIS models from SK Hynix before finalizing stackup.
The device runs from a 1.14V-1.26V VDD rail with typical standby current of 28 mA and operating current of 45 mA per distributor data, but burst activity produces fast current transients. Estimated: for an 8-chip x16 bus peaking near 1 A total, a PDN targeting under 30 mV ripple requires bulk capacitance of roughly 100-330 uF (polymer or MLCC mix) plus at least one 0.1 uF MLCC per VDD ball group placed within 2 mm. Verify the VRM meets the DDR4 controller's load-line requirement and sequence VPP/VDD per the JEDEC power-up ramp spec in the datasheet.
Common substitution mistakes: (1) assuming the x16 H5AN8G6NCJR-VKC directly replaces an x8 H5AN8G8NCJR - the 96-ball footprint matches but ball functions differ by JEDEC organization, so nets must be re-verified; (2) forgetting the asynchronous RESET# pin, which must be asserted during power ramp or the device may not initialize; (3) ignoring refresh overhead at high operating temperature - plan controller scheduling for tREFI changes above 85C. Always confirm the speed-grade suffix code matches your controller's configured timing table before assembly.
合规信息
Datasheet description on ALLDATASHEET states Lead-Free & Halogen-Free; JLCPCB listing marks ROHS compliant. REACH and conflict-minerals status not stated in provided data.
