IRFB4410PBF - 100V N-Channel HEXFET MOSFET TO-220AB | Infineon
N.º de pieza: IRFB4410PBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.78 | $178,00 |
| 500 | $1.42 | $710,00 |
| 1.000 | $1.15 | $1.150,00 |
IRFB4410PBF Descripción general
A HEXFET power MOSFET is a metal-oxide-semiconductor field-effect transistor built around a hexagonal cell layout that maximizes channel density per unit silicon area, lowering RDS(on) and improving switching efficiency compared to legacy planar MOSFETs. Within the broader power-semiconductor hierarchy, it sits below insulated-gate bipolar transistors (IGBTs) for higher voltage/current roles but above small-signal MOSFETs in current handling, and it belongs to the discrete-semiconductors > MOSFETs product family.
Key features include fully avalanche-rated ruggedness, an improved gate structure for dynamic dV/dt immunity, fast intrinsic body diode with low reverse recovery, and a logic-level compatible 10V VGS(th) that simplifies gate drive from standard PWM controllers. The TO-220AB package provides a thermal resistance of 0.75 C/W junction-to-case, enabling high continuous dissipation when mounted to a small clip-on heatsink.
This device is targeted at high-efficiency synchronous rectification in switch-mode power supplies, hard-switched and high-frequency circuits, uninterruptible power supplies (UPS), DC motor drives, and class-D audio amplifiers where low conduction loss and high peak current handling are required. Designers benefit from Infineon's well-known TO-220 family tooling, robust transient ruggedness, and broad second-source availability.
Alternativas directas para IRFB4410PBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRFB4410PBF (mismo factor de forma y huella) — difiere en Technology, Package, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at TC=25C, Lead-Free / RoHS.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRFB4110G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4310G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4310Z
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4310ZG
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRF1407PBF
✅ Sustitución directa✓ En stock
$0.86 / unidad
Ver hoja de datos →IRFB3207ZPBF
✅ Sustitución directa✓ En stock
$1.62 / unidad
Ver hoja de datos →IRFB4020PBF
✅ Sustitución directa✓ En stock
$1.38 / unidad
Ver hoja de datos →IRFB4410PBF Valores máximos y características eléctricas
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) - HEXFET |
| Drain-to-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) |
| RDS(on) max @ VGS=10V | 10 mOhm |
| Total Gate Charge (Qg) | 120 nC |
| Power Dissipation (Pd) | 200 W (Tc) |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) |
| Encapsulado | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated |
| Nivel MSL | 1 (unlimited) |
| Estado RoHS | Compliant (Pb-free PBF suffix) |
| Series | HEXFET |
Configuración de pines de IRFB4410PBF
| Pin 1 | Gate — Gate control input - drives Vgs to turn the channel on/off |
| Pin 2 | Drain — Main current carrying terminal (also tied to metal tab) |
| Pin 3 | Source — Return terminal for drain current and gate-drive reference |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IRFB4410PBF es adecuado para 6 aplicacións: Synchronous Rectification in SMPS, Uninterruptible Power Supplies (UPS), High-Speed Power Switching, DC Motor Drive H-Bridge, Class-D Audio Amplifier Output Stage, Solar Inverter / MPPT Stage.
Synchronous Rectification in SMPS
The IRFB4410PBF's 100V Vdss, 10 mOhm RDS(on), and 120 nC gate charge make it well suited as a synchronous rectifier on the secondary side of 24V-48V switch-mode power supplies. Its low conduction loss at 50-80A secondary currents keeps efficiency above 95% in 500W telecom and server PSU designs, while its 100V rating provides safe headroom above 48V nominal bus plus transient spikes. Placed in place of a Schottky rectifier stage, it requires an SR controller (e.g. UCC24612) for proper timing and to prevent shoot-through. The trade-off versus a Schottky is roughly 2-3% efficiency gain at high load but added controller complexity.
Recomendado
Uninterruptible Power Supplies (UPS)
In UPS battery-to-inverter and battery-charger stages, the IRFB4410PBF handles continuous currents up to 88A at 48V battery bus with low conduction loss and avalanche-rated ruggedness to absorb inductive transients. Its 200W power dissipation and TO-220AB package allow straightforward heatsink mounting in industrial UPS chassis. The HEXFET die's broad SOA supports overload conditions during battery equalization and inverter surge events. Designers typically parallel two or three devices at high-power nodes, and the IRFB4410PBF's matched parts simplify current sharing. Compared to planar MOSFETs at the same rating, HEXFET typically offers 20-30% lower RDS(on) at the same silicon cost.
Recomendado
High-Speed Power Switching
For hard-switched half-bridge and full-bridge topologies running at 50-200 kHz, the IRFB4410PBF's 120 nC total gate charge and fast intrinsic body diode keep switching losses manageable. Its 100V Vdss and avalanche energy rating suit 24-48V motor control and class-D audio amplifier power stages, where switching transients from inductive loads are routine. Use a dedicated gate driver (e.g. IR2104 or UCC27714) to source/sink 1-2A of gate current, since the device's input capacitance exceeds 5 nC and PWM controllers alone cannot switch it fast enough. The HEXFET's low dynamic dV/dt ruggedness prevents parasitic turn-on from Miller coupling in bridge configurations.
Recomendado
DC Motor Drive H-Bridge
The IRFB4410PBF is commonly used as the low-side and high-side switch in H-bridge motor drives for 24-48V brushed DC motors in robotics, e-bikes, and small EVs. Its 88A continuous current rating handles most sub-1kW drive stages, and the 100V Vdss absorbs back-EMF spikes from inductive motor windings without avalanche breakdown. The 10 mOhm RDS(on) keeps conduction loss low during PWM at 50-100A peak currents, extending battery runtime. Designers add Schottky flyback diodes across each MOSFET for further protection. Trade-off: at very high PWM frequencies (>50 kHz) the 120 nC gate charge becomes a switching-loss bottleneck, so consider IRFB4310Z for sub-25 kHz and IRFB4110G for >50 kHz designs.
Recomendado
Class-D Audio Amplifier Output Stage
In class-D amplifier output half-bridges for subwoofers and PA speakers, the IRFB4410PBF serves as a robust output switch on +/-50V or 100V rails, delivering the high peak currents that low-frequency speaker loads demand. Its low RDS(on) preserves amplifier damping factor by minimizing output-filter series resistance, while its HEXFET ruggedness tolerates the occasional short-circuit from a speaker cable fault. The TO-220AB package eases heatsinking on the amplifier chassis. Audio designers benefit from the device's linear transfer characteristic, which reduces THD versus planar MOSFETs. Most pro-audio 500W-1kW class-D modules pair this part with a dedicated IR2110 or IRS2092 driver IC for the bootstrap high-side supply.
Recomendado
Solar Inverter / MPPT Stage
In solar photovoltaic micro-inverters and MPPT charge controllers, the IRFB4410PBF switches the high-frequency primary of the converter at 24-48V panel open-circuit voltage. Its 100V Vdss gives safe margin above the panel Voc under cold conditions (where it rises), and its 88A continuous rating supports 1-2kW inverter designs at full sun. HEXFET ruggedness helps absorb the ringing from the high-frequency isolation transformer leakage inductance. Designers typically run this part at 50-100 kHz in MPPT stages and pair it with a current-mode controller such as the SG2525 or UCC28950. The trade-off versus a wider SOA part is mostly thermal: at very high switching frequency the 120 nC Qg may force a switch to the IRFB4310Z family.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRFB4410PBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRFB4110G | IRFB4310G | IRFB4310Z | IRFB4310ZG | IRF1407PBF | IRFB3207ZPBF | IRFB4020PBF |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Drain-to-Source Voltage (Vdss) | 100 V | 60 V | 100 V | 100 V | 100 V | 75 V | 75 V | 200 V |
| Continuous Drain Current (Id @ 25C) | 88 A | 120 A | 130 A | 120 A | 120 A | 130 A | 120 A | 18 A |
| RDS(on) max @ VGS=10V | 10 mOhm | 4.5 mOhm | 5.6 mOhm | 4.5 mOhm | 4.5 mOhm | 7.8 mOhm | 4.0 mOhm | 70 mOhm |
| Total Gate Charge (Qg) | 120 nC | 180 nC | 160 nC | 85 nC | 85 nC | 230 nC | 200 nC | 60 nC |
| Power Dissipation (Pd) | 200 W | 200 W | 300 W | 300 W | 300 W | 330 W | 300 W | 200 W |
| RoHS Status | Compliant (Pb-free) | Compliant | Compliant | Compliant | Compliant | Compliant (Pb-free) | Compliant (Pb-free) | Compliant (Pb-free) |
Diferenciadores clave
- Balanced 100V/88A/10 mOhm middle-ground rating (frente a IRFB4110G)
- Lower gate charge than higher-current variants (frente a IRFB4310G)
- Higher Vdss headroom than 75V competitors (frente a IRFB3207ZPBF / IRF1407PBF)
- Higher continuous current than 200V-class (frente a IRFB4020PBF)
Notas de diseño
Estimated: at 50A continuous load and RDS(on) of 10 mOhm, conduction loss is approximately P = Id^2 * RDS(on) = 50^2 * 0.010 = 25W. With the TO-220AB junction-to-case thermal resistance of about 0.75 C/W (junction-to-ambient of ~62 C/W without heatsink), case temperature will rise ~19C above ambient at 25W dissipation. Mount the device to a heatsink with thermal resistance below 1 C/W to keep Tj below 125C at 25C ambient. Apply a thin layer of thermal compound and torque the mounting screw to 0.5-0.7 Nm for optimal contact.
Keep the gate-drive loop area as small as possible: place the gate-driver IC within 10mm of the gate pin, and route the gate return directly back to the source pin rather than to a remote ground. The high di/dt during switching (up to 5 A/ns) couples stray inductance into the gate-source loop and can cause parasitic turn-on via the Miller capacitance Cgd. Add a 10-100 Ohm gate-source resistor (typically 10k to 100k) to discharge the gate capacitance and prevent false turn-on in bridge configurations.
Do not operate the IRFB4410PBF above its SOA curve - particularly at low Vds (<10V) with high Id, where DC SOA is most restrictive. Always derate Id to 70-80% of the 88A rating for continuous duty to account for heatsink aging, dust accumulation, and ambient temperature rise in enclosures. Ensure the body diode reverse-recovery (Qrr) does not exceed the controller's blanking time; otherwise add a Schottky anti-parallel diode. Never exceed Vgs ratings (+/-20V absolute maximum) - use a 12-15V gate clamp or zener transient suppressor.
Switching the IRFB4410PBF at >50 kHz produces significant EMI from the drain-node dV/dt (typically 5-10 V/ns). Add a small RC snubber (10-100 Ohm + 1-10 nF) across drain-source to slow the edge and reduce ringing. Common-mode chokes on the DC bus and a Y-capacitor from drain-node to chassis ground help meet conducted-emission limits per EN 55022/CISPR 22. Place the snubber components physically close to the MOSFET drain pin to minimize parasitic inductance.
Información de cumplimiento
PBF suffix indicates Pb-free plating per Infineon's documentation. RoHS and REACH compliant per product page. Not AEC-Q100 qualified - select automotive-grade IRF parts for vehicular applications.
