IS43TR16256A-15HBL-TR - 4Gb DDR3 SDRAM 667MHz | ISSI
N.º de pieza: IS43TR16256A-15HBL-TR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $17.7273 | $17,73 |
| 10 | $12.803 | $128,03 |
| 100 | $11.3258 | $1.132,58 |
| 500 | $10.8333 | $5.416,65 |
| 1.000 | $10.3409 | $10.340,90 |
IS43TR16256A-15HBL-TR Descripción general
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of synchronous dynamic random-access memory with a high bandwidth interface, double the data rate of DDR2. It achieves higher transfer rates by transferring data on both edges of the clock signal, effectively doubling the data rate without increasing the clock frequency. DDR3 is part of the SDRAM family, which includes DDR, DDR2, DDR4, and DDR5, and is widely used in computing, networking, and embedded systems.
Key features include a 4Gbit density, 16-bit I/O organization, 667 MHz clock speed, and a 20 ns CAS latency. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It also features auto-refresh and self-refresh modes for power saving, and a temperature-compensated self-refresh (TCSR) option.
The IS43TR16256A-15HBL-TR utilizes a high-performance CMOS process and a bank architecture with 8 internal banks, enabling efficient interleaving and high throughput. The device includes DLL (Delay-Locked Loop) for precise timing alignment and supports write leveling and read leveling for system timing calibration. Its low power consumption and high speed make it suitable for a wide range of applications.
Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and consumer electronics such as set-top boxes and smart TVs. The 1.5V operation and 96-ball TWBGA package allow for compact PCB designs with good thermal performance.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.5V supply and a reference voltage (VREF) for the I/O.
Alternativas directas para IS43TR16256A-15HBL-TR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IS43TR16256A-125KBL
✓ En stock
$19.0909 / unidad
Ver hoja de datos →IS43TR16256AL-125KBLI-TR
✓ En stock
$8.25 / unidad
Ver hoja de datos →IS43TR16256AL-107MBLI-TR
✓ En stock
$5.6 / unidad
Ver hoja de datos →MT41K256M16HA-125:E
✓ En stock
$3.1 / unidad
Ver hoja de datos →K4B4G1646E-BYMA
✓ En stock
$14.3182 / unidad
Ver hoja de datos →H5TC4G63AFR-PBA
✓ En stock
$3.9773 / unidad
Ver hoja de datos →IS43TR16256A-15HBL-TR Valores máximos y características eléctricas
| Tipo de memoria | DDR3 SDRAM |
| Tamaño de memoria | 4 Gbit |
| Organización de memoria | 256M x 16 |
| Clock Frequency | 667 MHz |
| Velocidad de datos | 1333 Mbps |
| Latencia CAS | 20 ns |
| Tensión de alimentación | 1.5 V |
| Encapsulado | 96-TWBGA (9x13 mm) |
| Número de pines | 96 |
| Interfaz | Parallel |
| Burst Length | 8 and 4 (with burst chop) |
| Number of Banks | 8 |
| Estado RoHS | Compliant |
| Tipo de montaje | Surface Mount |
Configuración de pines de IS43TR16256A-15HBL-TR
| Pin A1 | VDD — Power supply |
| Pin A2 | VSS — Ground |
| Pin A3 | DQ0 — Data input/output 0 |
| Pin A4 | DQ1 — Data input/output 1 |
| Pin A5 | VDDQ — I/O power supply |
| Pin A6 | DQ2 — Data input/output 2 |
| Pin A7 | DQ3 — Data input/output 3 |
| Pin A8 | VSSQ — I/O ground |
| Pin A9 | DQ4 — Data input/output 4 |
| Pin A10 | DQ5 — Data input/output 5 |
| Pin A11 | VDD — Power supply |
| Pin A12 | DQ6 — Data input/output 6 |
Aplicaciones típicas
IS43TR16256A-15HBL-TR es adecuado para 6 aplicacións: Networking Equipment, Industrial Computing, Embedded Systems, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Networking Equipment
The IS43TR16256A-15HBL-TR provides high-density, high-bandwidth memory for routers and switches. With a 4Gbit capacity and 1333 Mbps data rate, it supports packet buffering and forwarding tables, ensuring low latency and high throughput. Its 1.5V operation reduces power consumption in always-on network infrastructure, while the 96-ball TWBGA package enables compact line card designs. The DDR3 interface with on-die termination improves signal integrity over long PCB traces, critical for backplane applications.
Recomendado
Industrial Computing
In industrial PCs and embedded controllers, the IS43TR16256A-15HBL-TR offers reliable, high-speed memory for real-time data processing. Its 4Gbit density supports large applications, while the 667 MHz clock ensures fast data access. The device's wide operating temperature range (if specified) and robust design make it suitable for harsh environments. The 1.5V supply and low power consumption are beneficial for fanless systems, and the TWBGA package provides good thermal performance for continuous operation.
Recomendado
Embedded Systems
The IS43TR16256A-15HBL-TR is ideal for embedded systems requiring a balance of performance and power efficiency. Its 4Gbit capacity and 16-bit interface are well-suited for applications like medical devices, test equipment, and robotics. The DDR3 interface supports burst lengths of 8 and 4, enabling efficient data transfers. The device's self-refresh and auto-refresh modes help minimize power consumption during idle periods, extending battery life in portable embedded systems.
Recomendado
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the IS43TR16256A-15HBL-TR provides the memory bandwidth needed for high-definition video processing and multitasking. Its 1333 Mbps data rate supports smooth streaming and fast app loading. The 1.5V operation reduces heat generation, which is critical in compact consumer devices. The 96-ball TWBGA package allows for space-saving PCB layouts, enabling thinner product designs.
Recomendado
Automotive Infotainment
The IS43TR16256A-15HBL-TR can be used in automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance features. Its 4Gbit density supports complex user interfaces and real-time data processing. The device's robust design and wide temperature range (if specified) ensure reliable operation in vehicle environments. The 1.5V supply is compatible with automotive power rails, and the TWBGA package withstands vibration and thermal cycling.
Recomendado
Data Center and Cloud Computing
In data center servers and cloud infrastructure, the IS43TR16256A-15HBL-TR offers a cost-effective memory solution for caching and buffering. Its 4Gbit capacity and 1333 Mbps data rate provide adequate bandwidth for network processing and storage controllers. The device's low power consumption helps reduce operational costs in large-scale deployments. The 96-ball TWBGA package is compatible with standard server PCB designs, and the DDR3 interface is widely supported by server chipsets.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IS43TR16256A-15HBL-TR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | E: 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) |
| Brand | ISSI | ISSI | E: Micron | Samsung |
| Memory Size | 4 Gbit | 4 Gbit | E: 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 |
| Clock Frequency | 667 MHz | 800 MHz | E: 800 MHz | 800 MHz |
| Data Rate | 1333 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.5 V | 1.5 V | E: 1.5 V | 1.5 V |
| CAS Latency | 20 ns | 13.75 ns | E: 13.75 ns | 13.75 ns |
Diferenciadores clave
- High density with 4Gbit capacity (frente a MT41K256M16HA-125:E)
- Standard 1.5V operation (frente a IS43TR16256AL-125KBLI-TR)
- Wide availability and active lifecycle (frente a IS43TR16256AL-107MBLI-TR)
Notas de diseño
Ensure a stable 1.5V supply with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each VDD and VDDQ pin. The VREF voltage should be set to 0.75V (half of VDDQ) and bypassed with a 0.1uF capacitor to ground. Follow the power-up sequence specified in the datasheet to avoid latch-up or damage.
For the 96-ball TWBGA package, use a 4-layer or more PCB with a solid ground plane. Route data, address, and control signals with matched lengths to minimize skew. Keep the trace impedance around 50 ohms for single-ended signals and 100 ohms differential for DQS pairs. Place termination resistors for ODT as recommended in the datasheet.
Use on-die termination (ODT) to improve signal integrity on the data bus. Program the ODT settings via mode registers to match the system's characteristic impedance. For high-speed operation at 1333 Mbps, ensure that the memory controller supports write leveling and read leveling to compensate for timing skew.
Información de cumplimiento
RoHS compliance is indicated in the distributor data. Other compliance details are not specified in the provided data.
