K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung
N.º de pieza: K4AAG085WA-BCWE ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.51 | $8,51 |
| 10 | $8.24 | $82,40 |
| 100 | $7.9 | $790,00 |
| 500 | $7.58 | $3.790,00 |
| 1.000 | $7.24 | $7.240,00 |
K4AAG085WA-BCWE Descripción general
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a volatile memory technology that transfers data on both edges of the clock, doubling bandwidth versus DDR3 at the same clock frequency. Within the memory hierarchy, DRAM sits between CPU caches and non-volatile storage such as NAND flash, serving as main system memory in computing and embedded platforms.
Key features of the K4AAG085WA-BCWE include the 16 Gbit monolithic density in a x8 organization, 3200 Mbps/pin bandwidth for high-throughput data paths, and the reduced 1.2 V operating voltage that Samsung states delivers roughly 25% lower power than DDR3. The 78FBGA package suits high-density surface-mount assembly on memory modules and compute boards.
Architecturally, the device implements the JEDEC DDR4 interface with bank groups, enabling faster back-to-back access than DDR3, plus on-die termination and programmable CAS latency for signal integrity tuning. Samsung DDR4 uses advanced process nodes to achieve the 16 Gbit density in a compact die while maintaining reliability targets for server and industrial workloads.
Typical applications include servers and datacenter DIMMs, embedded controllers and industrial computing modules, networking equipment, and desktop PC main memory. The x8 organization allows either single-chip use or error-correcting configurations where each DRAM is paired with ECC logic.
When designing with this part, validate JEDEC timing parameters against your memory controller at the target speed bin; a 3200 Mbps part can be down-clocked to 2666 MT/s platforms, but firmware timing tables must be updated and validated in BIOS or U-Boot.
This page synthesizes distributor pricing, drop-in alternatives within the K4AAG085W family, and practical design notes not consolidated in the manufacturer datasheet.
Alternativas directas para K4AAG085WA-BCWE — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4AAG085WA-BCWE (mismo factor de forma y huella) — difiere en Package, Interface, Operating Temperature, RoHS Status, Density.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4AAG085WC-BCWE
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG085WA-BCTD
✅ Sustitución directa✓ En stock
$10.18 / unidad
Ver hoja de datos →K4AAG085WA-BCRC
✅ Sustitución directa✓ En stock
$6.1 / unidad
Ver hoja de datos →K4AAG085WA-BCPB
✅ Sustitución directa✓ En stock
$6.92 / unidad
Ver hoja de datos →K4AAG085WB-MCPB
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG085WA-BCWE Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 16 Gbit |
| Organización de memoria | 2G x 8 |
| Velocidad de datos | 3200 Mbps (DDR4-3200) |
| Tensión de alimentación | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V |
| Temperatura de funcionamiento | 0 C to 85 C |
| Encapsulado | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Tipo de montaje | Surface Mount |
| Interfaz | JEDEC DDR4 |
| Memory Width | 8-bit |
| Refresh | Auto-refresh (per JEDEC DDR4) |
| Application Class | Main memory / embedded DRAM |
| Estado RoHS | Compliant (per JLCPCB listing) |
| Manufacturer | Samsung Electronics |
Guía de configuración de pines de K4AAG085WA-BCWE 78-ball fbga (9 x 11 mm, 0.8 mm pitch)
Configuración de pines para K4AAG085WA-BCWE (encapsulado 78-ball fbga (9 x 11 mm, 0.8 mm pitch)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K4AAG085WA-BCWE.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K4AAG085WA-BCWE es adecuado para 6 aplicacións: Server and Datacenter Memory, Embedded and Industrial Controllers, Networking and Telecom Equipment, Desktop PC Main Memory, Edge AI and Vision Systems, Test, Measurement, and Replacement Sourcing.
Server and Datacenter Memory
The K4AAG085WA-BCWE is a core building block for server RDIMM and LRDIMM modules, where multiple 16 Gb x8 DDR4 devices are ganged to reach 32 GB, 64 GB, or higher module capacities. Its 3200 Mbps data rate delivers 25.6 GB/s per chip of peak bandwidth, while the 1.2 V rail reduces platform power roughly 25% versus DDR3 - critical for datacenter TCO. In ECC configurations, x8 devices are the standard choice because they support single-device data correction (SDDC) on registered DIMMs. Designers must follow JEDEC DDR4 module routing rules: matched-length fly-by command/address topology, on-die termination tuning, and careful VREF training during BIOS memory initialization.
Recomendado
Embedded and Industrial Controllers
Industrial controllers, factory-automation IPCs, and embedded compute modules use the K4AAG085WA-BCWE as main memory where 16 Gb density in a single 78-ball FBGA saves board space versus stacking multiple 8Gb parts. The 0 to 85 C commercial temperature range covers controlled industrial cabinets, and the 1.2 V DDR4 interface lowers overall thermal load in fanless enclosures. Samsung DDR4's higher bandwidth (3200 Mbps) accelerates real-time data logging and machine-vision buffering. Integration requires memory-controller timing validation at the target speed bin in U-Boot or firmware; down-clocking a 3200 Mbps device to a 2666 MT/s controller is supported but demands JEDEC timing table updates and margin testing across temperature.
Recomendado
Networking and Telecom Equipment
Routers, switches, and 5G network processing cards rely on the K4AAG085WA-BCWE for packet buffering, flow tables, and control-plane memory. The 2G x 8 organization with 3200 Mbps speed provides the low-latency, high-throughput access patterns that network line cards demand, and the 78-ball FBGA permits dense placement of multiple DRAMs beside the network processor. DDR4's bank-group architecture shortens back-to-back access latency, improving small-packet throughput versus DDR3 at the same clock. Designers should budget for simultaneous-switching noise on the 64-bit-plus-ECC DQ buses with per-ball-group decoupling and reference-plane integrity, and qualify the WC/WB die revisions for long-lifecycle telecom supply continuity.
Recomendado
Desktop PC Main Memory
Consumer desktop platforms use 16 Gb DDR4 devices like the K4AAG085WA-BCWE to build 8 GB and 16 GB UDIMMs with fewer chips per module. The DDR4-3200 speed bin matches mainstream Intel and AMD desktop memory controllers, and the 1.2 V operation keeps module power within standard DDR4 thermal limits without heatspreaders in many configurations. Samsung's process technology packs 16 Gbit into a compact die, reducing cost per gigabyte - a key consumer-market driver. Module makers must implement JEDEC SPD programming so host BIOS reads correct CAS latency, tRCD, tRP, tRAS, and speed-bin data, and should run full memtest validation across the populated speed bins during qualification.
Recomendado
Edge AI and Vision Systems
Edge-AI accelerator boards and smart-camera SoCs use the K4AAG085WA-BCWE as frame-buffer and inference-workspace memory. Its 3200 Mbps bandwidth sustains multi-megapixel video streaming into neural-network preprocessors, while 16 Gb per chip allows 2 GB of workspace with only one DRAM per 8-bit lane - valuable in compact camera form factors. The 1.2 V rail suits battery-powered and thermally sealed vision nodes. DDR4 training (write leveling, read training, VREF dq training) must be executed at boot; designers should select SoCs whose memory controllers are validated at 3200 MT/s or configure conservative timing at lower bins. Eye-diagram margin testing on the fly-by CA bus is recommended at full speed.
Recomendado
Test, Measurement, and Replacement Sourcing
Instrument vendors and board-repair services use the K4AAG085WA-BCWE for oscilloscope acquisition memory, logic-analyzer capture buffers, and as a replacement DRAM in legacy DDR4-based instruments. The 3200 Mbps rate and 16 Gb density suit deep-memory acquisition architectures, while standard JEDEC DDR4 behavior simplifies controller design with FPGA memory interfaces. For repair and BOM-replacement sourcing, the pin-compatible K4AAG085W family (WA/WB/WC dies, BCTD/BCRC/BCPB/BCWE bins) provides drop-in substitution on the same 78-ball FBGA footprint - though firmware timing tables should be verified. Distributors such as Win Source, Ampheo, and Fusion Worldwide specialize in RFQ-based sourcing of this memory class.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4AAG085WA-BCWE — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4AAG085WC-BCWE | K4AAG085WA-BCTD | K4AAG085WA-BCRC | K4AAG085WA-BCPB | K4AAG085WB-MCPB |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA (9 x 11 mm) | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | WA (C-die generation per family) | WC (later revision) | WA - same die | WA - same die | WA - same die | WB (different revision) |
Diferenciadores clave
- Top speed bin in the 16Gb x8 DDR4 family (frente a K4AAG085WA-BCTD)
- Later die revision continuity (frente a K4AAG085WC-BCWE)
- Lower power than DDR3 at equal bandwidth (frente a K4A8G165WC-BCWE)
Notas de diseño
Route the DDR4 fly-by command/address bus with matched lengths per JEDEC module routing rules, and enable on-die termination (ODT) settings from the Samsung datasheet speed-bin tables. At 3200 Mbps, budget for ISI and crosstalk on the DQ bus: maintain 2D/3D eye-margin training in the memory controller and verify with eye-diagram measurements across temperature. Per-ball-group decoupling (multiple 0.1 uF ceramics plus bulk capacitance) near VDD balls limits simultaneous-switching droop during full-bus bursts.
The 1.2 V rail (1.14 V to 1.26 V range) requires tight regulation - DDR4 speed bins are sensitive to VDD droop. Use a dedicated point-of-load regulator with remote sensing where possible, and separate VDDQ power islands from noisy digital rails. Estimated: at typical DDR4 16Gb x8 idle-to-active current profiles, per-device power remains in the sub-watt class, but a module with 16 DRAMs needs bulk supply sizing of several amps; compute from your controller's IDD specification tables.
Down-clocking this DDR4-3200 device to a 2666 MT/s memory controller is electrically fine but is NOT a firmware drop-in: JEDEC timing registers (CL, tRCD, tRP, tRAS, refresh) must be reprogrammed to the lower-bin values and validated in BIOS/U-Boot, per published Samsung DDR4 migration guidance. Also verify the suffix speed bin (BCWE vs BCTD/BCRC/BCPB) before substitution - same-footprint suffix variants do not all meet the 3200 Mbps rating.
Información de cumplimiento
JLCPCB lists K4AAG085WA-BCWE as ROHS-compliant FBGA-78 DRAM. REACH, lead-free, halogen-free and conflict-minerals declarations must be requested from Samsung directly.
