K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
N.º de pieza: K4A8G165WC-BCWE ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $47.51 | $47,51 |
| 10 | $45.14 | $451,40 |
| 100 | $42.76 | $4.276,00 |
| 500 | $40.39 | $20.195,00 |
| 1.000 | $38.01 | $38.010,00 |
K4A8G165WC-BCWE Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR DRAM family, positioned above DDR3 and below DDR5 in the memory hierarchy. An SDRAM stores each bit as charge in a capacitor-cell array, refreshed periodically, and synchronizes all transfers to a clock so a memory controller can pipeline reads and writes. DDR4 doubles the bank count versus DDR3, adds bank groups, and lowers the core supply to 1.2V, cutting power roughly 25% versus DDR3 at comparable bandwidth.
Key features of this C-die component include the 3200 Mbps speed bin (DDR4-3200, PC4-25600 class), x16 organization with data-mask support for partial writes, and per Samsung's DDR4 product family: CRC and CA parity functions, ZQ calibration, dynamic on-die termination (ODT), auto precharge, and an asynchronous reset function. The x16 data width suits controllers with narrower 16-bit or 32-bit buses typical of embedded, networking, and industrial designs.
Architecturally, the device uses bank groups to allow faster back-to-back accesses, a DLL-enabled mode for timing accuracy, and on-die termination that reduces external components. The 1.2V VDD with separate 1.2V VDDQ rails and VPP for cell arrays reflects DDR4's power partitioning.
Typical applications include industrial controllers, computing modules and SOMs, networking equipment line cards, firmware logging buffers, and replacement sourcing for DDR3-era 8Gb designs moving to DDR4.
Design consideration: route address/command lines fly-by with proper ODT settings and verify the speed bin (BCWE = 3200) matches your controller's trained timings; the commercial 0-85C grade is not suitable for industrial -40C environments - use a T-grade variant instead.
This page synthesizes distributor pricing, JEDEC-compatible drop-in alternatives, and practical DDR4 design notes not consolidated in the Samsung datasheet alone.
Alternativas directas para K4A8G165WC-BCWE — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4A8G165WB-BCWE
✓ En stock
$6.55 / unidad
Ver hoja de datos →K4A8G165WC-BCTD
✓ En stock
$41.2 / unidad
Ver hoja de datos →K4A8G165WC-BCRC
✓ En stock
$23 / unidad
Ver hoja de datos →K4A8G165WC-BCPB
✓ En stock
$1.31 / unidad
Ver hoja de datos →MT40A512M16GE-075E:B
📋 Alternativa de referencia (no en el catálogo)
K4A8G165WC-BCWE Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8 Gb |
| Organización de memoria | 512M x 16 |
| Velocidad de datos | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2 V |
| Temperatura de funcionamiento | 0C to +85C |
| Encapsulado | 96FBGA (96-ball Fine-Pitch BGA) |
| Configuration | x16 |
| Die Generation | C-die (8Gb C) |
| Interfaz | Parallel, DDR4 (JEDEC) |
| Data Mask | Supported |
| CRC Function | Supported |
| ZQ Calibration | Supported |
| Dynamic On-Die Termination | Supported |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| Tipo de montaje | Surface Mount |
| JEDEC Compliance | DDR4 standard compliant |
Guía de configuración de pines de K4A8G165WC-BCWE 96fbga (96-ball fine-pitch bga)
Configuración de pines para K4A8G165WC-BCWE (encapsulado 96fbga (96-ball fine-pitch bga)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K4A8G165WC-BCWE.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K4A8G165WC-BCWE es adecuado para 6 aplicacións: Industrial Controllers and PLCs, Embedded Computing Modules (SOM/COM), Networking and Communication Equipment, Firmware Boot and Data Logging Systems, Automotive-adjacent Telematics and Display Units (non-safety), Test and Measurement Instrumentation.
Industrial Controllers and PLCs
Industrial controllers need reliable DRAM for run-time data, logging, and HMI buffering. The K4A8G165WC-BCWE fits this role with its 8Gb density and x16 organization, which simplifies 16-bit or 32-bit memory buses on embedded controller boards. CRC and ZQ calibration features improve link robustness in electrically noisy factory environments, while dynamic ODT reduces termination components. At 0C to +85C it suits enclosed cabinets; designs with cold-start requirements should select the BCTD grade instead. Running the bus at DDR4-3200 leaves timing margin when firmware runs it at 2666.
Recomendado
Embedded Computing Modules (SOM/COM)
System-on-module designs use x16 DDR4 components in 32-bit or 64-bit buses to reach 4-16 GB configurations. The K4A8G165WC-BCWE's 8Gb density allows 2 GB per 64-bit bank group with only four devices, keeping BOM count low. Its 96FBGA footprint matches JEDEC x16 DDR4, so modules can dual-source with Micron MT40A512M16GE-075E:B without PCB rework. The 3200 Mbps bin supports high-bandwidth SoCs, while CRC and CA-parity-class features protect against bit errors during extended thermal soaks typical of edge computing deployments.
Recomendado
Networking and Communication Equipment
Switches, routers, and gateway line cards buffer packets in DRAM where bandwidth determines throughput. The K4A8G165WC-BCWE delivers DDR4-3200 bandwidth per device, and multiple x16 devices can be ganged for wider buses. Data mask support enables efficient partial writes for packet buffer management, and the asynchronous reset function allows quick recovery on watchdog events. Its 0C to +85C rating covers managed equipment rooms, while telecom-outdoor variants should use extended-temperature grades. On-die termination reduces signal-integrity effort on high-layer-count backplane-connected boards.
Recomendado
Firmware Boot and Data Logging Systems
Industrial gateways and data loggers use DDR4 SDRAM as execution memory for firmware and as a write buffer ahead of NAND flash storage. The K4A8G165WC-BCWE provides 1 GB of x16 working memory, adequate for Linux-class logging stacks. ZQ calibration maintains output impedance accuracy over temperature drift, protecting data integrity during long unattended runs. Pairing it with Samsung NAND from the K9 family creates a single-vendor memory BOM, simplifying qualification. Designers should budget refresh current in the 1.2V rail calculation for battery-backed loggers.
Recomendado
Automotive-adjacent Telematics and Display Units (non-safety)
Infotainment-adjacent telematics and digital display modules in commercial fleets use DDR4 for map buffering and UI rendering. The K4A8G165WC-BCWE's 3200 Mbps rate supports display frame buffers at x16 widths, and its CRC feature guards against visual artifacts on long PCB traces. Note this specific part is a commercial 0C to +85C grade and is not AEC-Q100 qualified - it fits cabin-environment, non-safety applications only. Automotive-qualified programs should select Samsung automotive DDR4 grades and validate the extended temperature and reliability requirements accordingly.
Recomendado
Test and Measurement Instrumentation
Bench instruments, data-acquisition units, and logic analyzers require large capture buffers with deterministic access. The K4A8G165WC-BCWE's x16 organization and data-mask capability let acquisition ASICs or FPGAs write partial bursts efficiently, while DDR4-3200 bandwidth sustains streaming capture rates. Bank-group architecture reduces turnaround penalties during record-and-playback cycles. The 96FBGA footprint supports second-sourcing with Micron parts for long product lifecycles typical of instrumentation. Board designers should follow Samsung's fly-by routing and VREFCA decoupling guidance for stable training across units.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4A8G165WC-BCWE — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4A8G165WB-BCWE | K4A8G165WC-BCTD | K4A8G165WC-BCRC | K4A8G165WC-BCPB | MT40A512M16GE-075E |
|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same | B: 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B: Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B: 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B: 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B: 1.2 V |
| Die Generation | C-die | B-die | C-die | C-die | C-die | B: Micron E-die class |
Diferenciadores clave
- Top speed bin in the WC family (frente a K4A8G165WC-BCRC)
- Drop-in second source availability (frente a MT40A512M16GE-075E:B)
- Commercial grade trade-off (frente a K4A8G165WC-BCTD)
Notas de diseño
Route address/command lines in fly-by topology per Samsung's DDR4 design guidance and program write leveling/ODT accordingly. Keep DQS/DQ length matching within plus/minus a few mils per segment and reference VREFCA with clean decoupling. The 3200 Mbps bin leaves little timing margin, so simulate IBIS models before tape-out. After assembly, run full memory training on every unit; do not hard-code training values across die-generation swaps (B-die vs C-die).
Estimated: at 1.2V, a single x16 DDR4 device at moderate utilization draws on the order of a few hundred milliamps of dynamic current, so budget the VDD/VDDQ rail at 1 A or more per device in your DC-DC design (e.g., TPS54218 family). Separate VDDQ plane from VDD, add bulk plus 0.1 uF per ball-bank decoupling, and account for DDR4 refresh current in low-power duty cycles. Verify VPP rail requirements per the Samsung datasheet power-up sequence.
Do not substitute lower speed bins (BCRC 2600 Mbps, BCPB 2400 Mbps) into a DDR4-3200 timing design - setup/hold violations cause intermittent failures. Do not use the BCWE grade below 0C or above +85C; the commercial grade will not meet cold-start industrial specs. Note some distributor listings state 0 to +95C while others state 0 to +85C - verify the operating range in the official Samsung datasheet for your exact date code before finalizing thermal design.
Follow JEDEC DDR4 x16 ballout routing practice: keep the DRAM within the controller's allowed flight time, use Daisy-chain address/command routing with end termination, and place the 96FBGA device with the VSS ball field tied to a solid ground plane through multiple vias. For dual-sourcing with Micron MT40A512M16GE-075E:B, verify package height and ball pitch dimensions in both mechanical drawings to confirm reflow profile compatibility.
Información de cumplimiento
Compliance declarations were not present in the retrieved web data. Request formal RoHS/REACH certificates from Samsung or the distributor at order time. This is a commercial-grade DDR4 SDRAM, not an AEC-Q100 automotive-qualified part.
