K4AAG085WM-BCWE - 16Gb DDR4 3200Mbps 78FBGA | Samsung
N.º de pieza: K4AAG085WM-BCWE ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.51 | $8,51 |
| 10 | $8.15 | $81,50 |
| 100 | $7.75 | $775,00 |
| 500 | $7.35 | $3.675,00 |
| 1.000 | $7 | $7.000,00 |
K4AAG085WM-BCWE Descripción general
DDR4 SDRAM (Double Data Rate fourth-generation Synchronous Dynamic Random Access Memory) is a class of volatile memory ICs that transfer data on both edges of a clock signal, doubling effective bandwidth versus DDR3. In the memory hierarchy, DDR4 SDRAM sits between the CPU cache and storage, serving as the primary working memory in computing modules, networking equipment, and embedded controllers. The JEDEC-standard DDR4 interface uses a bank-group architecture for improved efficiency.
Key features of the K4AAG085WM-BCWE include its 16 Gb density in a single die, the 2G x 8 organization that suits byte-wide memory buses, and a 3200 Mbps (DDR4-3200) speed grade delivering 25.6 GB/s of peak bandwidth per device. Operating at 1.2V, Samsung DDR4 consumes approximately 25% less power than DDR3 at equivalent speeds, per Samsung's DDR4 product literature.
The -BCWE suffix denotes the speed/timing bin and die revision within the K4AAG085W family. Samsung's DDR4 devices use advanced process nodes to achieve high density with low operating and standby current, supporting the bank-group architecture and on-die termination defined by the DDR4 standard for signal integrity at high data rates.
Typical applications include server and desktop DIMM/UDIMM assemblies, networking routers and switches, industrial controllers, embedded computing modules, and firmware boot or data logging systems that require high-bandwidth volatile memory.
When designing with DDR4, ensure the memory controller supports the DDR4-3200 timing bin, implement fly-by routing with per-DROOP calibration (ZQ), and verify power delivery decoupling on the VDD/VDDQ 1.2V rails.
This page synthesizes distributor pricing and stock data, same-family drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, with prices as of 2026-09-04.
Alternativas directas para K4AAG085WM-BCWE — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4AAG085WM-BCWE (mismo factor de forma y huella) — difiere en Package, Interface, Data Rate, RoHS Status, Speed Grade.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4AAG085WM-BCTD
✅ Sustitución directa✓ En stock
$9.95 / unidad
Ver hoja de datos →K4AAG085WM-BCRC
✅ Sustitución directa✓ En stock
$1 / unidad
Ver hoja de datos →K4AAG085WA-BCWE
✅ Sustitución directa✓ En stock
$7.24 / unidad
Ver hoja de datos →K4AAG085WA-BCTD
✅ Sustitución directa✓ En stock
$10.18 / unidad
Ver hoja de datos →K4AAG085WA-BCRC
✅ Sustitución directa✓ En stock
$6.1 / unidad
Ver hoja de datos →K4AAG085WC-BCWE
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG085WA-BCPB
✅ Sustitución directa✓ En stock
$6.92 / unidad
Ver hoja de datos →K4AAG085WM-BCWE0MM
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG085WM-BCWE Especificaciones
| Tipo de memoria | DDR4 SDRAM |
| Density | 16 Gb |
| Organización de memoria | 2G x 8 |
| Velocidad de datos | 3200 Mbps (DDR4-3200) |
| Tensión de alimentación | 1.2 V |
| Temperatura de funcionamiento | 0C to +85C |
| Encapsulado | 78FBGA |
| Tipo de montaje | Surface Mount |
| Interfaz | DDR4 (JEDEC-standard) |
| Bank Group Architecture | Yes (DDR4) |
| Speed Grade Suffix | -BCWE |
| Application Class | Memory IC / Storage Component |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) |
Guía de configuración de pines de K4AAG085WM-BCWE 78fbga
Configuración de pines para K4AAG085WM-BCWE (encapsulado 78fbga). La numeración de pines, las funciones y los diagramas de conexión se definen en la hoja de datos del fabricante. Consúltela para conocer el footprint exacto y las directrices de soldadura.
No hay datos detallados de patillaje disponibles para K4AAG085WM-BCWE.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K4AAG085WM-BCWE es adecuado para 6 aplicacións: Server and Desktop DIMM Assemblies, Networking Routers and Switches, Embedded Computing Modules, Industrial Controllers and Automation, Firmware Boot and Data Logging Systems, Repair and Replacement Sourcing.
Server and Desktop DIMM Assemblies
The K4AAG085WM-BCWE is a primary component for server RDIMM/LRDIMM and desktop UDIMM assemblies. Its 16Gb density in 2G x 8 organization lets a 64-bit module reach 16 GB with just eight devices, reducing BOM count versus 8Gb parts. The DDR4-3200 speed grade delivers 25.6 GB/s per device at 1.2V, and Samsung DDR4 consumes roughly 25% less power than DDR3, lowering module thermal load in dense servers. In a DIMM layout, eight x8 devices populate both ranks of fly-by-addressed topology with on-die termination and per-device ZQ calibration maintaining signal integrity at 3200 Mbps. Designers should verify controller training supports the -BCWE timing table and implement the datasheet decoupling plan on VDD/VDDQ.
Recomendado
Networking Routers and Switches
High-bandwidth networking equipment relies on DDR4 SDRAM for packet buffers, route tables, and control-plane memory. The K4AAG085WM-BCWE fits this role with its 3200 Mbps data rate and 2G x 8 organization, which allows byte-wide buffering with per-lane DQS strobes for reliable high-frequency operation. The 78FBGA package supports the compact, high-density layouts required on line cards and switch fabrics, while the 1.2V rail limits power dissipation in thermally constrained fanless designs. Samsung product literature explicitly positions the DDR4 family for networking platforms needing increased bandwidth with lower energy. Buffer managers should size refresh and bank-group interleaving to sustain line-rate throughput with the DDR4-3200 timing configuration.
Recomendado
Embedded Computing Modules
COM Express, SMARC, and custom embedded computing modules use DDR4 SDRAM for main memory, and the K4AAG085WM-BCWE offers 16Gb per die in a compact 78FBGA footprint suited to module edge constraints. The 0C to +85C operating range covers typical industrial enclosure environments, and Samsung product overviews cite embedded computing as a target use for this family. Two devices yield 4 GB on a 64-bit bus; soldered-down DRAM improves vibration tolerance versus SODIMMs, which matters in transportation and factory-floor systems. Layout engineers should follow fly-by routing with length-matched address/command groups and reference-plane-continuous DQ routing to close timing at DDR4-3200 on 6-8 layer stackups.
Recomendado
Industrial Controllers and Automation
Industrial controllers, PLCs, and machine-vision hosts need high-bandwidth volatile memory for control loops, vision frame buffers, and logging. The K4AAG085WM-BCWE provides 16Gb of DDR4-3200 bandwidth capacity at 1.2V, keeping power budgets low in sealed cabinets without forced airflow. Samsung's product overview explicitly lists industrial controllers and embedded logging among the applications for this family. The commercial 0C to +85C temperature range suits standard industrial enclosures; for cold-start at -40C, warm-up behavior of DRAM refresh must be validated. Designers should pair the device with an industrial-grade DDR4 memory controller, implement the datasheet's VTT termination strategy, and reserve ZQ calibration resistors per JEDEC DDR4 layout practice.
Recomendado
Firmware Boot and Data Logging Systems
Boot processors and logging appliances use DDR4 SDRAM as execution and scratch memory; Samsung product descriptions of the K4AAG085W family cite firmware boot and embedded logging applications. The 16Gb density per 78FBGA die allows compact boot-flash-plus-DRAM subsystems on small boards, and the 2G x 8 organization simplifies byte-accessible memory maps for boot code staging. With DDR4-3200 throughput, log streams from multi-gigabit sensors or network taps can be buffered before writing to NAND or SSD storage. Because DRAM is volatile, firmware must complete training and initialization before any logged data is trusted; watchdog supervisors should re-trigger boot if memory training fails, and ECC-capable controllers are recommended for long-duration unattended logging.
Recomendado
Repair and Replacement Sourcing
The K4AAG085WM-BCWE serves repair depots and BOM-maintenance programs replacing failed or discontinued DRAM on motherboards, modules, and industrial boards. Distributor listings position the K4AAG085W family for replacement sourcing, and family variants verified pin-compatible in the 78FBGA package (K4AAG085WA/WC series, including K4AAG085WA-BCWE listed at $8.5126 on LCSC) widen sourcing options when the exact -WM-BCWE suffix is unavailable. Successful rework requires BGA reballing with lead-free balls matching the original profile, X-ray inspection of the reflowed joints, and a fresh memory-training pass in BIOS or controller firmware. Always confirm the replacement suffix's AC timing table against the original board's validated memory settings.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4AAG085WM-BCWE — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4AAG085WM-BCTD | K4AAG085WM-BCRC | K4AAG085WA-BCWE | K4AAG085WC-BCWE |
|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Die Revision / Speed Bin | -WM die, -BCWE bin | -WM die, -BCTD bin | -WM die, -BCRC bin | -WA die, -BCWE bin | -WC die, -BCWE bin |
Diferenciadores clave
- Latest -WM die revision with -BCWE DDR4-3200 bin (frente a K4AAG085WA-BCWE)
- Full DDR4-3200 speed grade (frente a K4AAG085WM-BCTD)
- x8 organization enabling write CRC and ECC-friendly topologies (frente a K4AAG165WA-BCWE)
Notas de diseño
Route DDR4-3200 in fly-by topology for address/command/control with on-die termination, and keep DQ/DQS byte lanes length-matched within the datasheet skew budget. Maintain continuous reference planes under all DRAM nets; avoid crossing plane splits. Place the 0.1 uF VDD/VDDQ decoupling capacitors within 2-3 mm of each ball, with bulk 10-47 uF per device, and route VTT termination with a dedicated low-impedance supply. Follow the Samsung DDR4 design guide trace impedance of 40 ohms for single-ended and 80 ohms for differential signals.
Do not assume all K4AAG085W suffixes share identical AC timing: the -BCWE, -BCTD, and -BCRC bins may support different CAS latency sets and tRFC/tFAW values. Substituting a suffix without updating the memory controller timing table or BIOS training data can cause boot failures or intermittent errors at temperature extremes. Always re-run memory training after any die-revision substitution, and qualify at both temperature corners of your operating envelope before releasing the change.
The device operates on 1.2V VDD/VDDQ rails; Samsung's DDR4 literature cites approximately 25% lower power than DDR3 at equivalent speed. Estimated: per-device current at DDR4-3200 depends on the suffix-specific IDD tables, which were not captured in sourced data - consult the revision datasheet IDD values. Provide VTTMA (memory array termination) rail per the datasheet, add 20-30% headroom on decoupling for burst currents, and verify power-up sequencing of VDD before VPP (2.5V) per the DDR4 standard power-ramp requirements.
At 3200 Mbps, eye margin is dominated by ISI and crosstalk: use ODT settings from the controller training algorithm, enable DDR4 write CRC on x8 devices (supported in this 2G x 8 organization), and keep stub lengths near zero by placing the DRAM directly on the fly-by chain. Simulate with IBIS models from Samsung for the specific die revision, and confirm ZQ calibration resistor placement (240 ohm, 1%) with a quiet ground return free of switching currents.
Información de cumplimiento
Compliance status for the specific -BCWE suffix was not stated in the sourced web data. Samsung DDR4 commodity DRAM is generally RoHS-compliant, but confirm via the official Samsung environmental certificate for this MPN before asserting compliance.
