K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung
N.º de pieza: K4B4G1646E-BMK0 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
K4B4G1646E-BMK0 Descripción general
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates, and is widely used in servers, laptops, and embedded systems.
Key features include a data rate of 1600 Mbps, a 16-bit I/O width, and support for various functions such as auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination (ODT), and data mask. The device operates over a temperature range of -40°C to +95°C, making it suitable for industrial and automotive applications.
The K4B4G1646E uses Samsung's E-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. It supports programmable CAS latency, burst length of 8, and on-die termination for signal integrity. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Typical applications include main memory in embedded systems, networking equipment, industrial PCs, and automotive infotainment. Its low voltage and wide temperature range make it ideal for power-sensitive and harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper operation.
Alternativas directas para K4B4G1646E-BMK0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4B4G1646E-BMK0 (mismo factor de forma y huella) — difiere en Package, Operating Temperature, Data Rate, Supply Voltage, Burst Length.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4B4G1646E-BMMA
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Ver hoja de datos →K4B4G1646D-BMK0
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Ver hoja de datos →MT41K256M16HA-125
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✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$5.6 / unidad
Ver hoja de datos →K4B4G1646E-BMK0 Valores máximos y características eléctricas
| Density | 4 Gb |
| Organización de memoria | 256M x 16 |
| Speed Grade | 1600 Mbps |
| Voltage | 1.35 V |
| Temperatura de funcionamiento | -40°C to +95°C |
| Encapsulado | 96-FBGA |
| Interfaz | Parallel |
| Clock Frequency | 800 MHz |
| Velocidad de datos | 1600 Mbps |
| Tipo de memoria | DDR3L SDRAM |
| Tipo de montaje | Surface Mount |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
| Data Mask | Yes |
Configuración de pines de K4B4G1646E-BMK0
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VDDQ — I/O power supply |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VSSQ — I/O ground |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VDDQ — I/O power supply |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VSSQ — I/O ground |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Aplicaciones típicas
K4B4G1646E-BMK0 es adecuado para 6 aplicacións: Industrial PCs, Networking Equipment, Automotive Infotainment, Embedded Computing, Medical Devices, Test & Measurement.
Industrial PCs
The K4B4G1646E-BMK0 provides 4Gb of DDR3L memory for industrial PCs, offering reliable operation over -40°C to +95°C. Its 1.35V operation reduces power consumption and heat generation, which is critical in sealed enclosures. The 1600 Mbps data rate ensures fast processing for control and monitoring tasks. With a 96-FBGA package, it fits compact motherboards. Recommended companion products include the NDL46PFP-8KET for storage and the STM32F767BGT6 for system control.
Recomendado
Networking Equipment
In networking equipment like routers and switches, the K4B4G1646E-BMK0 offers high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface provide sufficient throughput for gigabit and 10-gigabit networks. The low 1.35V supply reduces power in 24/7 operation. The wide temperature range ensures reliability in telecom cabinets. Companion products include the XC7Z020 FPGA for packet processing and the W634GU6RB12I for additional memory.
Recomendado
Automotive Infotainment
The K4B4G1646E-BMK0 is suitable for automotive infotainment systems, providing 4Gb of memory for navigation, media playback, and connectivity. Its -40°C to +95°C range covers automotive temperature grades, and the 1.35V operation is efficient for battery-powered vehicles. The 1600 Mbps speed supports smooth graphics and audio. The 96-FBGA package withstands vibration. Recommended companions include the STM32F746BET6 for display control and the L9978 for power management.
Recomendado
Embedded Computing
For embedded computing modules, the K4B4G1646E-BMK0 offers a balance of capacity and power efficiency. Its 4Gb density is ideal for running Linux or real-time operating systems. The 1.35V supply extends battery life in portable devices. The 1600 Mbps data rate supports responsive user interfaces. The wide temperature range allows deployment in outdoor or industrial settings. Companion products include the STM32MP1 series processors and the AS4C256M16D3LB-12BIN for additional memory.
Recomendado
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646E-BMK0 provides reliable memory for data acquisition and display. Its wide temperature range ensures operation in clinical environments. The low voltage reduces heat, which is important for patient comfort. The 1600 Mbps speed handles real-time data streams. The 96-FBGA package is compact for portable devices. Recommended companions include the STM32L476VGT6 for low-power processing and the MAX17633BATP+T for power management.
Recomendado
Test & Measurement
The K4B4G1646E-BMK0 is used in test and measurement equipment like oscilloscopes and signal analyzers, where high-speed data capture requires large memory buffers. Its 1600 Mbps data rate supports fast sampling, and the 4Gb capacity stores long waveforms. The 1.35V supply reduces power in benchtop instruments. The wide temperature range ensures accuracy in varying lab conditions. Companion products include the XC7A100T FPGA for signal processing and the ADC12DJ3200 for high-speed conversion.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4B4G1646E-BMK0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4B4G1646E-BMMA | K4B4G1646E-BYK0 | K4B4G1646E-BYMA | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
| Die Revision | E-die | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
Diferenciadores clave
- E-die process technology (frente a K4B4G1646D-BMK0)
- Wide temperature range (frente a MT41K256M16HA-125)
- Samsung brand reliability (frente a IS43TR16256AL-125KBL)
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and address lines to reduce signal integrity issues. Follow the layout guidelines in the Samsung datasheet for the 96-FBGA package.
The K4B4G1646E-BMK0 operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values and design accordingly.
Do not exceed the absolute maximum ratings for VDD and VDDQ. Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper calibration. Incorrect termination on DQ and DQS lines can cause data errors; use on-die termination (ODT) settings as recommended.
Información de cumplimiento
Samsung memory components are generally RoHS compliant. AEC-Q100 not applicable for standard memory ICs.
