K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
N.º de pieza: K9IUGY8J7B-BCK0 ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9IUGY8J7B-BCK0 Descripción general
NAND flash is a non-volatile memory technology that stores data in memory cells arranged in series, enabling far higher density than NOR flash at the cost of block-level erase and page-level program operations. Within the memory hierarchy, NAND flash sits between DRAM (volatile, fast) and magnetic/optical storage, and it is the dominant storage medium for solid-state drives, eMMC, UFS, and raw flash modules. V-NAND stacks memory cells vertically, increasing bit density per wafer while reducing cell-to-cell interference compared to planar NAND.
Key characteristics of this device include its 1Tbit raw capacity, TLC (3-bits-per-cell) storage, and the -BCK0 speed/binning suffix that identifies its interface timing class within the Samsung V-NAND product family. Raw NAND parts of this class use an asynchronous/synchronous toggle-mode DDR interface to communicate with a host NAND controller that manages ECC, wear leveling, and bad-block management.
Architecturally, the die relies on charge-trap V-NAND cells and page buffers to achieve high program/erase endurance and stable retention. Because TLC cells store three bits, error rates are higher than MLC/SLC, so error-correcting code (ECC) such as LDPC in the host controller is mandatory for reliable operation.
Typical applications include consumer and enterprise SSDs, embedded storage modules, set-top boxes, network-attached storage, and industrial data loggers where high density and cost-per-bit are the primary selection criteria.
A key design consideration is that raw NAND requires a qualified host controller with firmware supporting Samsung toggle DDR timing, on-die ECC handling where applicable, and thermal management during program/erase bursts.
This page synthesizes cross-reference findings, family-level drop-in alternatives, and practical sourcing guidance not found in generic datasheet search engines. Note that several detailed electrical parameters require verification against the official Samsung datasheet, as flagged in the specifications table.
Alternativas directas para K9IUGY8J7B-BCK0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K9IUGY8J7B-BCK0 (mismo factor de forma y huella) — difiere en Memory Type, Cell Type, RoHS Status, Density, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K9HUGY8J5B-BCK0
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →K9HUGY8J5B-CCK0
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$9.6 / unidad
Ver hoja de datos →K9PRGY8S7M-CCK0
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Consulte el precio
Ver hoja de datos →K9IUGY8J7B-BCK0 Valores máximos y características eléctricas
| Manufacturer | Samsung Electronics |
| MPN | K9IUGY8J7B-BCK0 |
| Product Type | V-NAND Flash (raw NAND) |
| Density | 1 Tbit |
| Cell Type | TLC (Triple-Level Cell, 3 bits/cell) |
| Technology | Samsung V-NAND (3D vertical NAND) |
| Speed Grade | BCK0 |
| Tipo de montaje | Surface Mount |
| Estado del ciclo de vida | Active |
Guía de configuración de pines de K9IUGY8J7B-BCK0 standard
Configuración de pines para K9IUGY8J7B-BCK0 (encapsulado standard). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K9IUGY8J7B-BCK0.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K9IUGY8J7B-BCK0 es adecuado para 6 aplicacións: Client and Enterprise SSDs, Embedded Storage Modules, Data Center and Cloud Storage, Set-Top Boxes and Smart Home Hubs, Network Attached Storage (NAS), Industrial Data Loggers.
Client and Enterprise SSDs
The K9IUGY8J7B-BCK0 serves as high-density storage media in SSD designs, where its 1Tb TLC V-NAND capacity allows eight or more dies to be stacked or interleaved for multi-terabyte drives at aggressive cost per bit. Its -BCK0 speed grade integrates into toggle-DDR channels of mainstream SSD controllers, which interleave multiple dies per channel to raise parallel bandwidth beyond any single die's data rate. Because TLC cells require strong error correction, the controller's LDPC engine and data-refresh firmware are essential; on the benefit side, TLC V-NAND delivers several thousand program/erase cycles that comfortably meet client SSD endurance targets and, with over-provisioning, many enterprise workloads. Raw NAND placement between controller and power rail also requires clean VCC/VCCQ decoupling and power-loss protection to prevent write corruption during brownouts.
Recomendado
Embedded Storage Modules
Raw V-NAND such as the K9IUGY8J7B-BCK0 is soldered onto embedded storage modules and boards where a host SoC or FPGA manages the NAND flash translation layer. At 1Tb TLC density, a single device holds 128 GB of raw capacity, letting module designers reach hundreds of gigabytes with a handful of BGA footprints. In these designs the K9IUGY8J7B-BCK0 communicates over its toggle-DDR interface, and the -BCK0 timing class must be supported by the host's NAND controller IP. Thermal design matters because sustained program/erase activity raises die temperature, affecting timing margins; designers should follow Samsung's derating guidance from the datasheet. Compared with managed eMMC solutions, raw NAND reduces media cost per bit but shifts ECC and wear-leveling complexity to host firmware, a trade-off suited to high-volume, firmware-capable products.
Recomendado
Data Center and Cloud Storage
Hyperscale storage appliances and cloud object-store nodes use 1Tb TLC V-NAND dies like the K9IUGY8J7B-BCK0 as the raw media inside high-capacity nearline SSDs. The 1Tb density point is attractive because it minimizes die count per terabyte, reducing both BOM cost and assembly complexity for 30 TB-class and larger drives. Data center deployments emphasize sustained sequential write bandwidth and QoS, so the die's toggle-DDR data rate at the -BCK0 binning and its program-page time (datasheet figures) directly determine channel-level throughput when many dies are interleaved. Firmware-level features such as on-die ECC offload and read-retry reduce host CPU burden at high error rates typical of TLC. Power-loss protection circuitry and staged firmware updates are standard companion requirements in these racks.
Recomendado
Set-Top Boxes and Smart Home Hubs
Set-top boxes, IPTV gateways, and smart-home hubs need tens to hundreds of gigabytes of local storage for DVR buffering, application images, and telemetry logs. A single K9IUGY8J7B-BCK0 provides 128 GB raw capacity, enough for feature-rich platforms while keeping media cost low through TLC economics. These consumer platforms typically run a mid-range SoC with a built-in NAND controller supporting Samsung toggle-DDR timing; verifying -BCK0 support in the SoC's compatibility list is the main integration task. Consumer operating temperatures are mild, but enclosure airflow affects die temperature during heavy DVR writes, so board-level thermal relief under the BGA is recommended. Compared with managed eMMC, raw NAND trims BOM cost at volume, which matters in price-sensitive consumer hardware.
Recomendado
Network Attached Storage (NAS)
NAS systems use TLC V-NAND such as the K9IUGY8J7B-BCK0 both for cache tiers inside hybrid arrays and as the media of all-flash NAS appliances. The 1Tb density supports cache modules of several hundred gigabytes from just a few dies, giving ZFS-class file systems adequate SLOG/L2ARC capacity. Network workload bursts produce sustained multi-stream writes, so the die's program throughput at -BCK0 timing and the controller's channel interleaving depth set achievable SMB/NFS performance. Because NAS units run continuously, TLC endurance and firmware wear-leveling quality govern service life; datasheet P/E cycle ratings and the host's write-amplification control are the governing parameters. Power-fail protection and journaling are recommended to exploit NAND's fast commit performance safely.
Recomendado
Industrial Data Loggers
Industrial data loggers, energy meters, and condition-monitoring systems benefit from the K9IUGY8J7B-BCK0's 1Tb capacity for years of high-rate sensor and event recording on a single BGA footprint. Raw NAND keeps per-unit media cost low for volume deployments, while the host microcontroller or FPGA implements a simple flash translation layer with LDPC ECC sized for TLC error rates. Industrial environments impose wide temperature ranges, so the datasheet's operating temperature limits and thermal derating of toggle-DDR timing must be confirmed for the deployment envelope; conformal coating and vibration-rated mounting apply to the BGA assembly. The main design caution is power integrity during brownouts, since an interrupted program operation corrupts a page; supervisors and write-abort firmware mitigate this risk.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K9IUGY8J7B-BCK0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K9HUGY8J5B-BCK0 | K9HUGY8J5B-CCK0 | K9PRGY8S7M-CCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | BGA (Samsung V-NAND standard) | BGA (Samsung V-NAND standard) | BGA (Samsung V-NAND standard) | BGA (Samsung V-NAND standard) |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| Speed Grade | BCK0 | BCK0 (same) | CCK0 (different binning) | CCK0 (different binning) |
| Technology | Samsung V-NAND (3D) | Samsung V-NAND (3D) | Samsung V-NAND (3D) | Samsung V-NAND (3D) |
| Controller Qualification | Requires die-specific firmware support | Requires die-specific firmware support | Requires die-specific firmware support | Requires die-specific firmware support |
Diferenciadores clave
- Same speed-grade family match (frente a K9HUGY8J5B-CCK0)
- Adjacent-generation drop-in candidate (frente a K9HUGY8J5B-BCK0)
- Honest sourcing trade-off (frente a K9PRGY8S7M-CCK0)
Notas de diseño
Raw V-NAND draws significant current during program and erase operations, with short current spikes on VCC. Provide bulk capacitance (10 uF or more per die, per Samsung layout guidance) close to the BGA plus 0.1 uF ceramic decoupling for VCCQ, which carries the high-frequency toggle-DDR switching current. Power-loss protection (bulk capacitor reservoir plus firmware write-abort) is recommended for any application where interrupted program operations would corrupt data.
Route the toggle-DDR DQ, RE#, and DQS-class signals as length-matched groups between controller and NAND dies, following the trace-length skew limits in the Samsung datasheet for the -BCK0 speed grade. Multi-die stacking via die-select balls increases capacitive loading, so series termination resistors near the controller side are commonly required. Keep VSS return paths continuous under the data bus and place the BGA so fly-by traces stay short and symmetric across stacked dies.
The most common failure mode when substituting Samsung V-NAND dies is controller firmware lacking support for the replacement die's geometry and timing set. Before swapping a K9IUGY8J7B-BCK0 for a same-family variant, confirm the die is on your controller vendor's qualified-vendor list and that the firmware build includes the correct ONFI/toggle parameter page handling. Also do not assume TLC endurance figures without reading the datasheet P/E cycle spec for this specific die revision.
Información de cumplimiento
Compliance status not stated in the provided verified web data; confirm via Samsung product page or distributor compliance certificates.
