K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
N.º de pieza: K9KUGY8J7C-CCK0 ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9KUGY8J7C-CCK0 Descripción general
NAND flash is a type of non-volatile storage technology that retains data without power. It sits within the memory hierarchy as block-addressable mass storage, distinct from volatile DRAM. TLC NAND stores three bits per cell, trading some endurance and speed versus MLC for higher density and lower cost per gigabyte, making it the dominant technology for consumer and client storage.
The K9KUGY8J7C series provides high-density TLC storage with a standard asynchronous/synchronous NAND interface compatible with mainstream NAND controllers. Samsung's V-NAND stacks cells vertically using charge-trap flash, which improves cell-to-cell interference characteristics and scaling compared with planar NAND. The -CCK0 suffix denotes a commercial temperature grade and standard packing variant of the family.
Architecturally, the device is organized into planes, blocks, and pages, with read, program, and erase operations issued through standard NAND command cycles. Error correction (ECC) is handled by the host controller, as is typical for raw TLC NAND, which requires strong ECC such as LDPC for reliable operation over its endurance window.
Typical applications include embedded storage modules, USB flash drives, memory cards, client SSDs, set-top boxes, and industrial recorders where high density and low cost per bit are priorities.
When designing with raw TLC NAND, the controller must implement wear leveling, bad-block management, and ECC; the interface mode (asynchronous or synchronous toggle) and timing must be configured to match the device grade suffix.
This page synthesizes drop-in family alternatives, application guidance, and sourcing context not consolidated in the raw manufacturer datasheet. Note that several detailed parameters are marked pending verified datasheet extraction, in line with XAIPART's no-fabrication data policy.
Alternativas directas para K9KUGY8J7C-CCK0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K9KUGY8J7C-CCK0 (mismo factor de forma y huella) — difiere en Memory Type, Cell Type, Technology, Density, RoHS Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K9KUGY8J7C-BCK0
✅ Sustitución directa✓ En stock
$9.55 / unidad
Ver hoja de datos →K9IUGY8J7B-CCK0
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$1 / unidad
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Ver hoja de datos →K9JUGY8J5C-CCK0
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$7.6 / unidad
Ver hoja de datos →K9JUGY8J5C-BCK0
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Ver hoja de datos →K9HUGY8J5B-CCK0
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$9.6 / unidad
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Ver hoja de datos →K9KUGY8J7C-CCK0 Valores máximos y características eléctricas
| Manufacturer | Samsung Electronics |
| Product Family | K9-Series V-NAND |
| Tipo de memoria | NAND Flash |
| Cell Type | TLC (Triple-Level Cell) |
| Technology | Samsung V-NAND (3D NAND) |
| Package Type | BGA |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Lead free / RoHS (per Samsung K9-family product pages) |
Guía de configuración de pines de K9KUGY8J7C-CCK0 bga
Configuración de pines para K9KUGY8J7C-CCK0 (encapsulado bga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K9KUGY8J7C-CCK0.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K9KUGY8J7C-CCK0 es adecuado para 6 aplicacións: Client SSD Storage, Embedded Storage Modules, USB Flash Drives and Memory Cards, Automotive Infotainment Storage, Smart Home and IoT Hubs, Data Center Boot and Log Storage.
Client SSD Storage
The K9KUGY8J7C-CCK0 fits client SSD architectures because Samsung V-NAND TLC offers high bits-per-cell density and competitive cost per gigabyte, which are the two dominant constraints in consumer SSD design. Samsung's own PM9B1 SSD line uses Samsung 128-layer TLC NAND, demonstrating the established controller-to-V-NAND pairing model. In an SSD, the NAND connects to an SSD controller through toggle or ONFI channels, with the controller providing LDPC ECC, wear leveling, and flash translation. The TLC cell type trades some endurance versus MLC, so controller-level ECC strength and SLC caching strategies determine effective write endurance.
Recomendado
Embedded Storage Modules
Embedded systems such as industrial gateways, set-top boxes, and networking equipment use raw TLC NAND like the K9KUGY8J7C-CCK0 on eMMC-like modules or soldered-down storage subassemblies. The BGA package supports automated SMT assembly and dense board placement, while the standard NAND command interface integrates with application processors or companion controllers that already support Samsung K9 device IDs. Because TLC requires strong ECC, designers should enable the host ECC engine (LDPC-class) sized to the datasheet endurance specification. The commercial temperature grade suits indoor embedded products; extended-temperature industrial builds should confirm grade suitability before design-in.
Recomendado
USB Flash Drives and Memory Cards
Removable media products prioritize cost per gigabyte and physical miniaturization, and the K9KUGY8J7C-CCK0 addresses both through TLC V-NAND density and a compact BGA footprint that fits thin card and stick form factors. The NAND interfaces to a single-chip USB or SD controller that implements FTL, wear leveling, and ECC internally. Samsung V-NAND's vertical cell structure improves cell-to-cell interference margins compared with planar NAND, supporting reliable multi-bit-per-cell storage at high layer counts. Multi-die stacking of identical family members such as K9KUGY8J7C-BCK0 lets designers scale capacity without board redesign.
Recomendado
Automotive Infotainment Storage
Samsung's K9PHGY8S7C-CCK0 family listing explicitly identifies automotive infotainment and cluster as a K9-series application domain, and the K9KUGY8J7C-CCK0 serves the same role at its generation and density point. Navigation databases, media caches, and firmware stores are read-mostly workloads well matched to TLC NAND endurance characteristics. Designers should pair the NAND with a controller providing power-fail integrity (write abort recovery), since infotainment units lose power unpredictably. Note that the -CCK0 commercial-grade suffix must be validated against the automotive temperature requirement; automotive-qualified grade variants should be confirmed with Samsung ordering information.
Recomendado
Smart Home and IoT Hubs
Smart-home hubs, security recorders, and connected-appliance controllers need local non-volatile storage for firmware images, configuration, and event logs, and the K9KUGY8J7C-CCK0 supplies this at TLC cost efficiency. Its BGA surface-mount format suits compact hub PCBs, and the standard NAND interface is supported by the application processors common in these products. Write workloads in IoT hubs are light (logging and OTA updates), which keeps TLC wear well within its endurance envelope, while read performance comfortably supports boot and media indexing. RoHS/lead-free compliance supports consumer product certifications.
Recomendado
Data Center Boot and Log Storage
Server and data-center platforms use small raw NAND devices for BIOS/UEFI boot storage, BMC logs, and diagnostic data, workloads where the K9KUGY8J7C-CCK0's TLC density and standard interface fit well. Boot storage is overwhelmingly read-biased, so TLC endurance is a non-issue, while density allows dual firmware banks and crash-dump partitions on a single device. The BGA package withstands server thermal cycling when laid out per JEDEC SMD practices, and lead-free/RoHS compliance aligns with enterprise hardware environmental requirements. Verify controller device-ID support for this Samsung generation in the BIOS/BMC firmware NAND table.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K9KUGY8J7C-CCK0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K9KUGY8J7C-BCK0 | K9IUGY8J7B-CCK0 | K9JUGY8J5C-CCK0 | K9HUGY8J5B-CCK0 |
|---|---|---|---|---|---|
| Package | BGA | BGA - same footprint | BGA - same footprint class | BGA - same footprint class | BGA - same footprint class |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC V-NAND | TLC V-NAND | TLC V-NAND | TLC V-NAND | TLC V-NAND |
| Die Generation | K (current generation) | K (same die) | I (prior generation) | J (prior generation) | H (older generation) |
| Grade/Packing Suffix | -CCK0 (commercial) | -BCK0 | -CCK0 | -CCK0 | -CCK0 |
| RoHS / Lead Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
| Parametric Match | 100% (reference) | 100% | 90% | 80% | 70% |
Diferenciadores clave
- Identical-die drop-in availability (frente a K9KUGY8J7C-BCK0)
- Latest-generation V-NAND in family (frente a K9IUGY8J7B-CCK0)
- Higher density class option (frente a K9JUGY8J5C-CCK0)
Notas de diseño
Samsung V-NAND BGA packages support asynchronous and high-speed synchronous (toggle/ONFI) operation. For synchronous mode, keep the DQ/RE/WE trace lengths matched within the controller's specified window and route over a solid ground reference. Confirm the exact timing grade of the -CCK0 suffix in the Samsung datasheet before closing timing at the interface's maximum frequency; different family generations (K9I vs K9K) have different tR/tWC tables, and controller firmware timing tables must be updated when switching dies.
Estimated: raw TLC NAND power depends on the unverified VCC spec for this MPN, so design the VCC rail using the datasheet's program-current figure (typically the worst-case demand during multi-page program operations). Decouple VCC with at least a 0.1 uF ceramic per power ball plus bulk capacitance (10 uF class) near the device; program-current spikes during parallel plane programming can otherwise droop the rail and corrupt the operation in progress.
Raw TLC NAND requires host-side LDPC-class ECC, bad-block management, and wear leveling; there is no internal FTL. When swapping family dies (for example K9IUGY8J7B to K9KUGY8J7C), the controller's device-ID table must be updated or the part may fail initialization even though it is pin-compatible. Also verify that the commercial temperature grade matches the product environment - using a commercial-grade part in an extended-temperature industrial or automotive enclosure is a common field-failure cause.
Información de cumplimiento
RoHS / lead-free status extracted from Samsung K9-family authorized resource listings (Worldway). REACH, halogen-free, and conflict-minerals declarations were not present in verified data.
