K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
MPN: K9KUGY8J7C-BCK0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.6 | $116.00 |
| 100 | $10.9 | $1,090.00 |
| 500 | $10.2 | $5,100.00 |
| 1,000 | $9.55 | $9,550.00 |
Drop-in alternatives for K9KUGY8J7C-BCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9JUGY8J5C-BCK0
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View Datasheet →K9JUGY8J5C-CCK0
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$7.6 / Unit
View Datasheet →K9IUGY8J7B-BCK0
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View Datasheet →K9IUGY8J7B-CCK0
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$1 / Unit
View Datasheet →K9HUGY8J5B-BCK0
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View Datasheet →K9HUGY8J5B-CCK0
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$9.6 / Unit
View Datasheet →K9KUGY8J7C-BCK0 Maximum Ratings & Electrical Characteristics
| Memory Type | NAND Flash (TLC V-NAND) |
| Density | 1 Tb |
| Cell Type | TLC (3 bits/cell) |
| Package Type | BGA |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Grade Suffix | BCK0 |
| Manufacturer | Samsung Electronics |
K9KUGY8J7C-BCK0 [data_needed: package code / ball count] Pin Configuration Guide
Complete pinout information for K9KUGY8J7C-BCK0 ([data_needed: package code / ball count] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package code / ball count] package pinout diagram for K9KUGY8J7C-BCK0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9KUGY8J7C-BCK0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9KUGY8J7C-BCK0 is suitable for 6 applications: Enterprise SSD, Client SSD, Data Center Storage Appliances, Embedded Storage Modules, Surveillance and Video Storage, Automotive and Industrial Data Loggers.
Enterprise SSD
Enterprise solid-state drives consume 8-16 NAND packages per drive, and the K9KUGY8J7C-BCK0's 1Tb TLC density lets a 15.36TB-class drive be built with fewer packages, shorter trace runs, and lower controller channel loading. In this role the device streams page data over its toggle-class DDR interface while the SSD controller applies LDPC ECC and interleaves channels to reach PCIe Gen4/Gen5 bandwidth targets. Because TLC program times are longer than SLC, controllers rely on SLC-cache tiering; the high density of this die maximizes cacheable raw capacity. Verify the datasheet timing mode ceiling and power-fail characteristics when qualifying the drive.
Recommended
Client SSD
Client PC SSDs benefit directly from the K9KUGY8J7C-BCK0's cost-per-GB advantage: TLC V-NAND stores three bits per cell, and 1Tb per die means a 2TB drive needs only a fraction of the packages required a generation ago, shrinking the PCB and BOM cost. The device's standard Samsung NAND command set works with mainstream client controllers, and the -BCK0 grade targets standard operating conditions. Design consideration: consumer workloads are read-dominated, which suits TLC endurance, but ensure the controller firmware implements background garbage collection so sustained write performance remains stable after the drive fills.
Recommended
Data Center Storage Appliances
Scale-out storage nodes and all-flash arrays deploy hundreds of TB per chassis, so raw NAND density and supply consistency dominate selection. The K9KUGY8J7C-BCK0 offers a single-vendor Samsung supply path and generation-stable footprints across K9H/K9I/K9J/K9K generations, letting one PCB carry multiple NAND generations for cost optimization. Its 1Tb TLC die improves capacity per U.2/E1.S module while keeping power per TB low, a key metric in data-center TCO models. Qualify endurance at the appliance level by logging SMART media-wear indicators across the fleet during pilot deployment.
Recommended
Embedded Storage Modules
Embedded modules such as M.2 B-key and soldered-down eMMC/UFS-class assemblies use raw NAND like the K9KUGY8J7C-BCK0 behind an SoC's flash controller in routers, set-top boxes, and industrial gateways. The device's BGA package supports standard SMT reflow, and its vertical V-NAND stacking minimizes board area in height-constrained enclosures. Integration requires the host to implement the Samsung NAND command protocol, bad-block management, and ECC; once firmware supports the generation, footprint compatibility with K9J/K9I family parts simplifies sourcing. Reserve test pads for NAND ID reads to verify grading at production test.
Recommended
Surveillance and Video Storage
Video-surveillance NVRs and edge recorders write continuously 24/7, making endurance management the central design task. The K9KUGY8J7C-BCK0's TLC V-NAND provides the density to retain weeks of multi-camera footage at a reasonable cost per TB, while the host controller's wear leveling spreads the roughly constant write stream evenly across the die's blocks. Because TLC P/E endurance is lower than MLC, size the retention buffer conservatively and enable data-refresh for long-idle periods. The -BCK0 grade's standard temperature range suits indoor rack environments; derate for unventilated outdoor enclosures.
Recommended
Automotive and Industrial Data Loggers
High-capacity data loggers for fleets, test vehicles, and industrial equipment record sensor streams to multi-terabyte local storage. A bank of K9KUGY8J7C-BCK0 packages behind a fault-tolerant controller provides 1Tb-per-die density with power-loss protection handled at the board level via bulk capacitors and write-completion journaling in firmware. Note that the -BCK0 grade must be checked against the required ambient range; extended-temperature applications may need Samsung automotive-suffix NAND instead. The common Samsung footprint across generations lets one logger PCB scale capacity by populating fewer packages in cost-down variants.
Recommended
Recommended Products Summary
Engineering reference data for K9KUGY8J7C-BCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9JUGY8J5C-BCK0 | K9IUGY8J7B-BCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|---|---|
| Package | BGA | BGA - same footprint family | BGA - same footprint family | BGA - same footprint family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | TLC V-NAND Flash | TLC V-NAND Flash | TLC V-NAND Flash | TLC V-NAND Flash |
| Density | 1 Tb (128 GB per die) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Cell Type | TLC (3 bits/cell) | TLC (3 bits/cell) | TLC (3 bits/cell) | TLC (3 bits/cell) |
| Interface | [DATA_NEEDED: toggle DDR mode] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Grade Suffix | BCK0 | BCK0 | BCK0 | BCK0 |
| Generation | K-generation (newest in family set) | J-generation (one back) | I-generation (two back) | H-generation (three back) |
Key Differentiators
- Newest generation density per die (vs K9IUGY8J7B-BCK0)
- Same footprint across generations enables PCB reuse (vs K9JUGY8J5C-BCK0)
- Single-vendor supply chain (vs Micron/SK Hynix 1Tb TLC NAND)
Design Notes
Raw NAND toggle DDR interfaces run with source-synchronous clocking; match trace lengths within the controller datasheet's skew budget across DQ0-DQ7, DQS, and clock nets. Keep NAND traces on inner layers with solid reference planes, and limit stubs by placing the K9KUGY8J7C-BCK0 within 50-80 mm of the SSD controller. Series damping resistors on DQS/CLK as recommended by the controller vendor suppress ringing at high timing modes.
Provide separate, low-impedance supplies for VCC and VCCQ with local 100 nF ceramic decoupling per package plus bulk 10 uF per rail shared per channel. Program currents on TLC NAND create supply droop transients that can corrupt in-flight operations if shared rails are undersized; a dedicated bulk capacitor bank per 4-die channel is prudent. Confirm exact rail voltages from the official datasheet before finalizing the power tree - do not assume values from a different generation.
The most common integration failure is firmware/die mismatch: SSD controllers must recognize the exact NAND ID and its read-retry, ECC (LDPC), and bad-block table format for the K-generation. Swapping generations (e.g., K9I to K9K) on the same footprint without firmware updates will fail initialization. Also verify power-fail behavior: TLC program interruption without power-fail protection can leave pages indeterminate, so implement hardware write-protect assertion on brown-out.
Compliance Information
RoHS compliance stated from general modern Samsung memory manufacturing practice; per-data compliance documents should be requested from Samsung for formal qualification.
