MT41K256M16LY-107:N - 4Gbit DDR3L SDRAM 933MHz | Micron
料号： MT41K256M16LY-107:N ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
MT41K256M16LY-107:N 概述
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is commonly used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gbit density, 16-bit data bus width, 933 MHz maximum clock frequency, and a 20 ns access time. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to 95°C (case temperature) and is RoHS compliant. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs.
Technically, the MT41K256M16LY-107:N uses Micron's advanced DRAM process technology, providing high reliability and performance. It features a 1.35V core and I/O supply, with a self-refresh mode for low-power standby. The device supports DLL (Delay-Locked Loop) for precise timing and includes programmable read and write latencies. Its architecture allows for efficient burst operations, making it suitable for high-speed data processing.
Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, embedded systems for industrial automation, and high-performance computing platforms. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to maintain signal integrity at 933 MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
直接替换替代料： MT41K256M16LY-107:N ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT41K256M16LY-107:N （相同外形与封装尺寸） ——差异在于 Supply Voltage, Package, CAS Latency, Memory Type, Data Rate.
快速对比工具——选择替代料号进行并排对比：
MT41K256M16LY-107:M
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16TW-107:P
✅ 直接替换✓ 有现货
$16 / 个
查看数据手册 →MT41K256M16HA-125:E
✅ 直接替换✓ 有现货
$3.1 / 个
查看数据手册 →K4B4G1646E-BYK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1.8 / 个
查看数据手册 →H5TQ4G63AFR-H9C
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.5 / 个
查看数据手册 →MT41K256M16LY-107:N 最大额定值与电气特性
| 存储器类型 | SDRAM - DDR3L |
| 存储容量 | 4 Gbit |
| 存储组织 | 256M x 16 |
| 数据总线宽度 | 16 bit |
| 最大时钟频率 | 933 MHz |
| Access Time | 20 ns |
| 电源电压 | 1.35 V |
| 封装 / 外壳 | 96-FBGA (7.5x13.5) |
| 安装方式 | Surface Mount |
| 工作温度范围 | 0°C to +95°C (Tc) |
| RoHS | Compliant |
| Memory Format | DRAM |
| Technology | DDR3L |
| Supply Voltage - Min | 1.283 V |
| Supply Voltage - Max | 1.45 V |
MT41K256M16LY-107:N 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
典型应用
MT41K256M16LY-107:N 适用于 6 应用s: Laptop and Ultrabook Memory, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Laptop and Ultrabook Memory
The MT41K256M16LY-107:N is ideal for laptop and ultrabook memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gbit density and 933 MHz speed provide sufficient bandwidth for multitasking and multimedia applications. The compact 96-FBGA package allows for slim module designs, fitting into space-constrained chassis. When used in SODIMM modules, it supports dual-channel configurations for improved performance. The low voltage also reduces heat generation, enhancing thermal management in thin devices.
推荐
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16LY-107:N provides high-bandwidth memory for packet buffering and routing tables. Its 933 MHz clock rate enables fast data processing, while the 4Gbit capacity supports large forwarding databases. The low voltage operation is beneficial in dense line cards where power dissipation is a concern. The device's parallel interface simplifies integration with network processors. Its reliability and long lifecycle make it suitable for infrastructure equipment that requires stable operation over years.
推荐
Embedded Systems
For embedded systems in industrial automation, medical devices, and IoT gateways, the MT41K256M16LY-107:N offers a balance of performance and power efficiency. Its 1.35V supply reduces power consumption, which is critical for battery-powered or energy-harvesting devices. The 4Gbit density allows for complex applications without external storage. The 96-FBGA package is suitable for compact PCBs. The device supports industrial temperature ranges, ensuring reliable operation in harsh environments. Its long-term availability makes it a safe choice for product designs with extended lifecycles.
推荐
High-Performance Computing
In high-performance computing (HPC) applications, the MT41K256M16LY-107:N provides the memory bandwidth needed for data-intensive tasks such as scientific simulations and big data analytics. Its 933 MHz clock and 16-bit bus deliver high throughput, while the 4Gbit capacity supports large datasets. The low voltage operation reduces power consumption in large server farms, contributing to energy savings. The device's parallel interface allows for easy integration into memory controllers. Its reliability and error-free operation are essential for mission-critical computing.
推荐
Consumer Electronics
The MT41K256M16LY-107:N is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles, where high-speed memory is required for smooth video playback and responsive user interfaces. Its 933 MHz speed ensures fast data access, while the 4Gbit capacity supports multiple applications simultaneously. The low voltage operation is beneficial for energy-efficient devices. The compact package allows for slim product designs. Its compatibility with standard DDR3L controllers simplifies design-in, reducing time-to-market.
推荐
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16LY-107:N provides reliable memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power consumption, which is important in vehicles where electrical load is a concern. The 4Gbit density supports complex infotainment software. The device operates over a wide temperature range, suitable for automotive environments. Its high-speed interface ensures smooth graphics rendering and fast data access. The compact package fits into head units and telematics modules.
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推荐产品汇总
工程参考数据： MT41K256M16LY-107:N ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K256M16LY-107:M | MT41K256M16TW-107:P | K4B4G1646E-BYK0 |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (8x14) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Max Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
关键差异点
- Low voltage operation (1.35V) reduces power consumption by 20% compared to standard DDR3 （对比 MT41K256M16HA-125:E)
- Higher clock speed (933 MHz) enables faster data transfer rates （对比 MT41K256M16HA-125:E)
- Compact 96-FBGA package (7.5x13.5) saves PCB space （对比 MT41K256M16TW-107:P)
设计说明
For reliable operation at 933 MHz, ensure proper PCB layout with controlled impedance traces for DQ, DQS, and clock signals. Keep trace lengths matched within 50 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow Micron's layout guidelines in the datasheet for best signal integrity.
The MT41K256M16LY-107:N requires a clean 1.35V supply for VDD and VDDQ. Use a low-dropout regulator or a switching regulator with low ripple to avoid noise-induced errors. Ensure the supply can handle peak current spikes during burst operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage during load transients.
Although DDR3L operates at low voltage, high-speed switching can generate heat. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. In dense layouts, consider using thermal vias under the FBGA package to improve heat dissipation. Monitor temperature in high-ambient environments.
合规信息
RoHS compliance confirmed from distributor data. Other compliance info not specified in provided data.
