NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º de pieza: NT5CC256M16CN-FLNA ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $6 | $6.000,00 |
NT5CC256M16CN-FLNA Descripción general
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include a 16n prefetch architecture, on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. The device supports auto-refresh and self-refresh modes, with a temperature-compensated self-refresh (TCSR) for industrial temperature ranges. It also features a programmable output driver impedance and a DLL for precise timing.
Technically, the NT5CC256M16CN-FLNA uses a 30nm-class process technology, achieving high density with low power. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge. The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for improved signal integrity in high-speed systems.
Typical applications include DDR3L memory modules for laptops, servers, and industrial PCs, as well as embedded systems such as network routers, set-top boxes, and automotive infotainment. Its low voltage and wide temperature range make it suitable for battery-powered and harsh environments.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3L to maintain signal integrity. The device requires a stable 1.35V supply and a reference voltage (VREF) for the address and control signals.
Alternativas directas para NT5CC256M16CN-FLNA — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5CC256M16CN-FLNA (mismo factor de forma y huella) — difiere en Package, CAS Latency, Data Rate, Burst Length, Operating Temperature Range.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
NT5CC256M16DN-FLNA
✅ Sustitución directa✓ En stock
$6 / unidad
Ver hoja de datos →NT5CC256M16ER-FLNA
✅ Sustitución directa✓ En stock
$22 / unidad
Ver hoja de datos →MT41K256M16HA-125
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$6.3636 / unidad
Ver hoja de datos →IS43TR16512B-125K
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4B4G1646E-BYMA
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$14.3182 / unidad
Ver hoja de datos →NT5CC256M16CN-FLNA Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Density | 4 Gb |
| Organización de memoria | 256M x 16 |
| Supply Voltage (VDD) | 1.35 V (1.283 V to 1.45 V) |
| Supply Voltage (VDDQ) | 1.35 V (1.283 V to 1.45 V) |
| Velocidad de datos | 1866 Mbps (max) |
| Latencia CAS | 13 (at 1866 Mbps) |
| Burst Length | 8, 4 |
| Number of Banks | 8 |
| Encapsulado | 96-ball FBGA |
| Rango de temperatura de funcionamiento | 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive |
| Storage Temperature | -55C to +100C |
| Refresh | Auto-refresh, self-refresh, TCSR |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de NT5CC256M16CN-FLNA
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Aplicaciones típicas
NT5CC256M16CN-FLNA es adecuado para 6 aplicacións: Laptop Memory Modules, Networking Equipment, Automotive Infotainment, Industrial PCs, Set-Top Boxes, Embedded Systems.
Laptop Memory Modules
The NT5CC256M16CN-FLNA is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its low 1.35V operation reduces power consumption, extending battery life. With a 4Gb density and 1866 Mbps data rate, it provides high performance for multitasking and multimedia applications. The 96-ball FBGA package enables compact module designs, and the industrial temperature range supports ruggedized laptops.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the NT5CC256M16CN-FLNA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate ensures low latency, while the 1.35V supply reduces heat generation in dense networking hardware. The automotive temperature grade (-40C to +105C) is suitable for outdoor and industrial networking equipment. The 96-ball FBGA package allows high-density memory arrays on compact PCBs.
Recomendado
Automotive Infotainment
The NT5CC256M16CN-FLNA is designed for automotive infotainment systems, supporting navigation, audio, and video playback. Its wide temperature range (-40C to +105C) ensures reliable operation in extreme conditions. The low 1.35V supply reduces power consumption, critical for automotive battery management. With 4Gb density, it can store large maps and media data. The 96-ball FBGA package is AEC-Q100 qualified for automotive use.
Recomendado
Industrial PCs
Industrial PCs require robust memory for 24/7 operation in harsh environments. The NT5CC256M16CN-FLNA offers an industrial temperature range (-40C to +95C) and high reliability. Its 4Gb density supports demanding applications like machine vision and process control. The 1.35V supply reduces heat dissipation, improving system longevity. The 96-ball FBGA package is ideal for compact industrial motherboards.
Recomendado
Set-Top Boxes
Set-top boxes use DDR3L memory for video decoding and streaming. The NT5CC256M16CN-FLNA provides 4Gb capacity and 1866 Mbps bandwidth, enabling smooth 4K video playback. Its low power consumption is ideal for always-on devices. The commercial temperature range (0C to +95C) is sufficient for consumer electronics. The 96-ball FBGA package allows compact designs for slim set-top boxes.
Recomendado
Embedded Systems
The NT5CC256M16CN-FLNA is suitable for various embedded systems, including medical devices, test equipment, and IoT gateways. Its low voltage and wide temperature range make it versatile. The 4Gb density provides ample memory for complex applications. The 96-ball FBGA package is easy to integrate into custom PCBs. The device supports self-refresh and TCSR for power saving in battery-powered systems.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5CC256M16CN-FLNA — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5CC256M16DN-FLNA | NT5CC256M16ER-FLNA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0C to +95C (commercial) | 0C to +95C (commercial) | 0C to +95C (commercial) | 0C to +95C (commercial) |
| Automotive Grade | Yes (up to +105C) | Yes (up to +105C) | Yes (up to +105C) | Yes (up to +105C) |
Diferenciadores clave
- Automotive temperature grade available (frente a MT41K256M16HA-125)
- Low voltage operation (frente a IS43TR16512B-125K)
- High data rate (frente a K4B4G1646E-BYMA)
Notas de diseño
Ensure stable 1.35V supply with low ripple. Use 0.1uF decoupling capacitors near each VDD and VDDQ pin, and a 10uF bulk capacitor per power plane. The VREF should be bypassed with a 0.1uF capacitor to ground.
Follow DDR3L layout guidelines: match trace lengths for DQ, DQS, and address/control signals to within 0.5mm. Maintain 50-ohm impedance for single-ended signals and 100-ohm differential for DQS. Keep VREF traces isolated from switching signals.
The device can dissipate up to 1.5W during operation. Ensure adequate airflow or a thermal pad to the PCB. The 96-ball FBGA package has a theta_JA of approximately 35C/W, so keep ambient temperature within the specified range.
Información de cumplimiento
RoHS compliant per Nanya datasheet. AEC-Q100 qualified for automotive grade.
