NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
N.º de pieza: NT5AD512M16 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $94.74 | $94,74 |
| 10 | $89.5 | $895,00 |
| 100 | $84.25 | $8.425,00 |
| 500 | $79 | $39.500,00 |
| 1.000 | $73.75 | $73.750,00 |
NT5AD512M16 Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates of 1600 to 3200 MT/s, with a prefetch buffer of 8n, and operates at a standard voltage of 1.2V, reducing power by up to 40% versus DDR3L. DDR4 is the dominant memory technology for modern servers, desktops, laptops, and increasingly for embedded systems requiring high-speed data processing.
Key features of the NT5AD512M16 include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC error detection. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The device supports burst lengths of 8 and 4 (with burst chop), and programmable CAS latency, enabling optimization for specific performance requirements.
The NT5AD512M16 utilizes advanced DRAM process technology, achieving high density (8Gb) in a compact 96-ball FBGA package (approximately 9mm x 13mm). The package is optimized for high-speed signaling with minimal parasitic inductance and capacitance, supporting data rates up to 3200 Mbps. The device includes on-die termination (ODT) for improved signal integrity on the data bus, and supports write leveling for proper timing alignment in multi-rank systems.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and embedded systems requiring large memory capacity and high bandwidth. The commercial temperature grade (0°C to +95°C) suits consumer electronics, while the industrial grade (-40°C to +95°C) is ideal for harsh environments. The 512Mx16 organization is particularly suited for applications needing high density per chip, reducing board space and component count.
When designing with the NT5AD512M16, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for impedance-controlled traces. The device requires a stable 1.2V VDD and 2.5V VPP supply, and the ZQ pin must be connected to a 240-ohm resistor to ground for calibration. Careful attention to signal integrity and power integrity is critical for reliable operation at 3200 Mbps.
Alternativas directas para NT5AD512M16 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5AD512M16 (mismo factor de forma y huella) — difiere en Data Rate, Package, Density, Supply Voltage, Operating Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
NT5AD512M16C4-HR
✅ Sustitución directa✓ En stock
$43.1 / unidad
Ver hoja de datos →NT5AD512M16H4-JR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NT5AD512M16A3-GZI
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT40A512M16JY-07EAIT:B
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$8.1 / unidad
Ver hoja de datos →K4A8G165WB-BCTD
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$37 / unidad
Ver hoja de datos →H5AN8G6NDJR-XNC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$55.6818 / unidad
Ver hoja de datos →NT5AD512M16 Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Organización de memoria | 512M x 16 |
| Total Density | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V |
| Velocidad de datos | 3200 Mbps (DDR4-3200) |
| Encapsulado | 96-ball FBGA |
| Operating Temperature (Commercial) | 0°C to +95°C |
| Operating Temperature (Industrial) | -40°C to +95°C |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuración de pines de NT5AD512M16
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin B1 | DQ2 — Data input/output 2 |
| Pin B2 | DQ3 — Data input/output 3 |
| Pin B3 | VDDQ — DQ power supply |
| Pin C1 | DQ4 — Data input/output 4 |
| Pin C2 | DQ5 — Data input/output 5 |
| Pin C3 | VSSQ — DQ ground |
| Pin D1 | DQ6 — Data input/output 6 |
| Pin D2 | DQ7 — Data input/output 7 |
| Pin D3 | VDD — Power supply |
| Pin E1 | DQS0 — Data strobe 0 |
| Pin E2 | DQS0# — Data strobe 0 complement |
| Pin E3 | VSS — Ground |
| Pin F1 | DM0 — Data mask 0 |
| Pin F2 | VDDQ — DQ power supply |
| Pin F3 | DQ8 — Data input/output 8 |
| Pin G1 | DQ9 — Data input/output 9 |
| Pin G2 | DQ10 — Data input/output 10 |
| Pin G3 | VSSQ — DQ ground |
| Pin H1 | DQ11 — Data input/output 11 |
| Pin H2 | DQ12 — Data input/output 12 |
| Pin H3 | VDD — Power supply |
| Pin J1 | DQ13 — Data input/output 13 |
| Pin J2 | DQ14 — Data input/output 14 |
| Pin J3 | DQ15 — Data input/output 15 |
| Pin K1 | DQS1 — Data strobe 1 |
| Pin K2 | DQS1# — Data strobe 1 complement |
| Pin K3 | VSS — Ground |
| Pin L1 | DM1 — Data mask 1 |
| Pin L2 | VDDQ — DQ power supply |
| Pin L3 | VSSQ — DQ ground |
| Pin M1 | A0 — Address input 0 |
| Pin M2 | A1 — Address input 1 |
| Pin M3 | A2 — Address input 2 |
| Pin N1 | A3 — Address input 3 |
| Pin N2 | A4 — Address input 4 |
| Pin N3 | A5 — Address input 5 |
| Pin P1 | A6 — Address input 6 |
| Pin P2 | A7 — Address input 7 |
| Pin P3 | A8 — Address input 8 |
| Pin R1 | A9 — Address input 9 |
| Pin R2 | A10/AP — Address input 10 / Auto-precharge |
| Pin R3 | A11 — Address input 11 |
| Pin T1 | A12 — Address input 12 |
| Pin T2 | A13 — Address input 13 |
| Pin T3 | A14 — Address input 14 |
| Pin U1 | A15 — Address input 15 |
| Pin U2 | BA0 — Bank address 0 |
| Pin U3 | BA1 — Bank address 1 |
| Pin V1 | BA2 — Bank address 2 |
| Pin V2 | BG0 — Bank group 0 |
| Pin V3 | BG1 — Bank group 1 |
| Pin W1 | CK — Clock |
| Pin W2 | CK# — Clock complement |
| Pin W3 | CKE — Clock enable |
| Pin Y1 | CS# — Chip select |
| Pin Y2 | ODT — On-die termination |
| Pin Y3 | RAS# — Row address strobe |
| Pin AA1 | CAS# — Column address strobe |
| Pin AA2 | WE# — Write enable |
| Pin AA3 | RESET# — Reset |
| Pin AB1 | ZQ — Calibration reference |
| Pin AB2 | VPP — Wordline boost supply (2.5V) |
| Pin AB3 | VSS — Ground |
Aplicaciones típicas
NT5AD512M16 es adecuado para 6 aplicacións: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Consumer Electronics.
High-Performance Computing
The NT5AD512M16 provides 8Gb density and 3200 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 512Mx16 organization reduces chip count, saving board space. The device's low 1.2V operation minimizes power consumption in dense memory arrays, and features like CRC and write leveling ensure reliable data transfer at high speeds.
Recomendado
Networking Equipment
In networking switches and routers, the NT5AD512M16 offers high-speed packet buffering with 3200 Mbps data rate and 8Gb capacity. Its auto self-refresh and temperature sensor help maintain data integrity in thermally challenging environments. The 96-ball FBGA package is suitable for compact line cards, and the device's low power consumption reduces cooling requirements.
Recomendado
Industrial Automation
The industrial temperature grade (NT5AD512M16H4-JR) supports -40°C to +95°C, making it suitable for factory automation and control systems. The device's robust features like auto precharge and data mask ensure reliable operation in noisy environments. With 8Gb density, it can store large logs and application code, while the 1.2V supply reduces power in distributed I/O modules.
Recomendado
Embedded Systems
For embedded computing, the NT5AD512M16 provides high-density memory in a small 96-ball FBGA package, ideal for space-constrained designs. Its 512Mx16 organization simplifies routing and reduces PCB layers. The device supports DDR4-3200 for fast data access, and features like dynamic ODT improve signal integrity without external components.
Recomendado
Data Center Servers
In server memory modules, the NT5AD512M16 offers high density and bandwidth for virtualization and database workloads. Its 8Gb capacity allows higher module densities, and the 3200 Mbps data rate meets server performance requirements. The device's low power and thermal features help manage data center energy costs, while CRC ensures data integrity in critical applications.
Recomendado
Consumer Electronics
For high-end consumer devices like smart TVs and gaming consoles, the NT5AD512M16 provides fast memory for smooth graphics and multitasking. Its 1.2V operation reduces power in battery-powered devices, and the compact FBGA package fits slim designs. The commercial temperature grade covers typical consumer operating ranges, and features like write leveling ensure compatibility with various SoCs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5AD512M16 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5AD512M16C4-HR | NT5AD512M16H4-JR | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- High density in 16-bit organization (frente a NT5AD512M8D3-HR)
- Industrial temperature grade option (frente a MT40A512M16JY-07EAIT:B)
- Built-in temperature sensor and CRC (frente a K4A8G165WB-BCTD)
Notas de diseño
The NT5AD512M16 requires a stable 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance decoupling capacitors (0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.
For DDR4-3200 operation, route all DQ, DQS, and address/control signals with controlled impedance (typically 40-50 ohms single-ended, 80-100 ohms differential). Maintain matched trace lengths within each byte lane to ensure timing skew is minimized. Follow the layout guidelines in the Nanya datasheet for the 96-ball FBGA package, including via placement and ground return paths.
The NT5AD512M16's power dissipation depends on operating frequency and activity. At 3200 Mbps, the device can dissipate up to [DATA_NEEDED: power dissipation] W. Ensure adequate airflow or a thermal pad is provided to keep the junction temperature within the specified range. The industrial grade supports up to +95°C case temperature, but proper thermal management is essential for reliability.
Información de cumplimiento
RoHS compliance confirmed from JLCPCB listing. Other compliance data not explicitly provided.
