NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CC256M16CN-FLNA ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
NT5CC256M16CN-FLNA Présentation
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include a 16n prefetch architecture, on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. The device supports auto-refresh and self-refresh modes, with a temperature-compensated self-refresh (TCSR) for industrial temperature ranges. It also features a programmable output driver impedance and a DLL for precise timing.
Technically, the NT5CC256M16CN-FLNA uses a 30nm-class process technology, achieving high density with low power. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge. The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for improved signal integrity in high-speed systems.
Typical applications include DDR3L memory modules for laptops, servers, and industrial PCs, as well as embedded systems such as network routers, set-top boxes, and automotive infotainment. Its low voltage and wide temperature range make it suitable for battery-powered and harsh environments.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3L to maintain signal integrity. The device requires a stable 1.35V supply and a reference voltage (VREF) for the address and control signals.
Alternatives de remplacement direct pour NT5CC256M16CN-FLNA — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CN-FLNA (même facteur de forme et même empreinte) — différant par Package, CAS Latency, Data Rate, Burst Length, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16DN-FLNA
✅ Remplacement direct✓ En stock
$6 / unité
Voir la fiche technique →NT5CC256M16ER-FLNA
✅ Remplacement direct✓ En stock
$22 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →IS43TR16512B-125K
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →NT5CC256M16CN-FLNA Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD) | 1.35 V (1.283 V to 1.45 V) |
| Supply Voltage (VDDQ) | 1.35 V (1.283 V to 1.45 V) |
| Débit de données | 1866 Mbps (max) |
| Latence CAS | 13 (at 1866 Mbps) |
| Burst Length | 8, 4 |
| Number of Banks | 8 |
| Boîtier | 96-ball FBGA |
| Plage de température de fonctionnement | 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive |
| Storage Temperature | -55C to +100C |
| Refresh | Auto-refresh, self-refresh, TCSR |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de NT5CC256M16CN-FLNA
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
Applications typiques
NT5CC256M16CN-FLNA convient pour 6 applications: Laptop Memory Modules, Networking Equipment, Automotive Infotainment, Industrial PCs, Set-Top Boxes, Embedded Systems.
Laptop Memory Modules
The NT5CC256M16CN-FLNA is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its low 1.35V operation reduces power consumption, extending battery life. With a 4Gb density and 1866 Mbps data rate, it provides high performance for multitasking and multimedia applications. The 96-ball FBGA package enables compact module designs, and the industrial temperature range supports ruggedized laptops.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the NT5CC256M16CN-FLNA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate ensures low latency, while the 1.35V supply reduces heat generation in dense networking hardware. The automotive temperature grade (-40C to +105C) is suitable for outdoor and industrial networking equipment. The 96-ball FBGA package allows high-density memory arrays on compact PCBs.
Recommandé
Automotive Infotainment
The NT5CC256M16CN-FLNA is designed for automotive infotainment systems, supporting navigation, audio, and video playback. Its wide temperature range (-40C to +105C) ensures reliable operation in extreme conditions. The low 1.35V supply reduces power consumption, critical for automotive battery management. With 4Gb density, it can store large maps and media data. The 96-ball FBGA package is AEC-Q100 qualified for automotive use.
Recommandé
Industrial PCs
Industrial PCs require robust memory for 24/7 operation in harsh environments. The NT5CC256M16CN-FLNA offers an industrial temperature range (-40C to +95C) and high reliability. Its 4Gb density supports demanding applications like machine vision and process control. The 1.35V supply reduces heat dissipation, improving system longevity. The 96-ball FBGA package is ideal for compact industrial motherboards.
Recommandé
Set-Top Boxes
Set-top boxes use DDR3L memory for video decoding and streaming. The NT5CC256M16CN-FLNA provides 4Gb capacity and 1866 Mbps bandwidth, enabling smooth 4K video playback. Its low power consumption is ideal for always-on devices. The commercial temperature range (0C to +95C) is sufficient for consumer electronics. The 96-ball FBGA package allows compact designs for slim set-top boxes.
Recommandé
Embedded Systems
The NT5CC256M16CN-FLNA is suitable for various embedded systems, including medical devices, test equipment, and IoT gateways. Its low voltage and wide temperature range make it versatile. The 4Gb density provides ample memory for complex applications. The 96-ball FBGA package is easy to integrate into custom PCBs. The device supports self-refresh and TCSR for power saving in battery-powered systems.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CN-FLNA — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16DN-FLNA | NT5CC256M16ER-FLNA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0C to +95C (commercial) | 0C to +95C (commercial) | 0C to +95C (commercial) | 0C to +95C (commercial) |
| Automotive Grade | Yes (up to +105C) | Yes (up to +105C) | Yes (up to +105C) | Yes (up to +105C) |
Principaux différenciateurs
- Automotive temperature grade available (vs MT41K256M16HA-125)
- Low voltage operation (vs IS43TR16512B-125K)
- High data rate (vs K4B4G1646E-BYMA)
Notes de conception
Ensure stable 1.35V supply with low ripple. Use 0.1uF decoupling capacitors near each VDD and VDDQ pin, and a 10uF bulk capacitor per power plane. The VREF should be bypassed with a 0.1uF capacitor to ground.
Follow DDR3L layout guidelines: match trace lengths for DQ, DQS, and address/control signals to within 0.5mm. Maintain 50-ohm impedance for single-ended signals and 100-ohm differential for DQS. Keep VREF traces isolated from switching signals.
The device can dissipate up to 1.5W during operation. Ensure adequate airflow or a thermal pad to the PCB. The 96-ball FBGA package has a theta_JA of approximately 35C/W, so keep ambient temperature within the specified range.
Informations de conformité
RoHS compliant per Nanya datasheet. AEC-Q100 qualified for automotive grade.
