W634GU6RB-11 - 4Gb DDR3L SDRAM 933MHz | Winbond
N.º de pieza: W634GU6RB-11 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $23.1818 | $23,18 |
| 10 | $16.7424 | $167,42 |
| 100 | $14.8106 | $1.481,06 |
| 500 | $14.1667 | $7.083,35 |
| 1.000 | $13.5227 | $13.522,70 |
W634GU6RB-11 Descripción general
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is a low-voltage variant of DDR3, operating at 1.35V instead of the standard 1.5V, reducing power consumption by about 20% compared to standard DDR3. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical.
Key features of the W634GU6RB-11 include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (ODT). These features enhance signal integrity and simplify system design. The device supports a temperature range of -40°C to +95°C, making it suitable for industrial applications. It is RoHS compliant and halogen-free, aligning with environmental standards.
Technically, the W634GU6RB-11 utilizes a 96-ball VFBGA package with a 7.5x13 mm footprint, offering a compact solution for space-constrained designs. The 20 ns CAS latency ensures fast access times, while the 933 MHz clock speed provides high bandwidth for data-intensive tasks. The device includes on-die termination (ODT) to improve signal quality on the memory bus, and supports write leveling for improved timing margins in multi-rank configurations.
Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high density make it ideal for power-sensitive designs where performance and efficiency are balanced.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed signals. The device supports a 1.35V supply, so verify that the power management IC provides a stable 1.35V rail.
Alternativas directas para W634GU6RB-11 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con W634GU6RB-11 (mismo factor de forma y huella) — difiere en Operating Temperature, Package, Supply Voltage, CAS Latency, Data Rate.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
W634GU6RB11I
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Ver hoja de datos →W634GU6RB-12
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Ver hoja de datos →W634GU6RB12J
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Ver hoja de datos →W634GU6RB11J
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Ver hoja de datos →W634GU6RB-11 Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Tamaño de memoria | 4Gbit (256M x 16) |
| Interfaz | Parallel |
| Clock Frequency | 933 MHz |
| Velocidad de datos | 1866 MT/s |
| Latencia CAS | 20 ns |
| Tensión de alimentación | 1.35V (1.283V to 1.45V) |
| Encapsulado | 96-VFBGA (7.5x13 mm) |
| Temperatura de funcionamiento | -40°C to +95°C |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Sin halógenos | Yes |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
Configuración de pines de W634GU6RB-11
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDDQ — I/O power supply |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Aplicaciones típicas
W634GU6RB-11 es adecuado para 6 aplicacións: Networking Equipment, Industrial Computing, Embedded Systems, Consumer Electronics, Automotive Infotainment, Data Center Servers.
Networking Equipment
The W634GU6RB-11 provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1866 MT/s data rate support high-throughput packet processing and routing tables. The 1.35V operation reduces power consumption in always-on network infrastructure, while the -40°C to +95°C range ensures reliability in uncontrolled environments. The 96-ball VFBGA package fits compact line cards, and features like write leveling and ODT improve signal integrity on high-speed buses.
Recomendado
Industrial Computing
In industrial PCs and embedded controllers, the W634GU6RB-11 offers reliable memory with a wide temperature range. Its 4Gb density supports complex control algorithms and data logging. The 1.35V supply reduces heat generation, critical in sealed enclosures. The 933 MHz clock enables fast data processing for real-time control. The VFBGA package withstands vibration, and features like auto self-refresh maintain data integrity during power fluctuations.
Recomendado
Embedded Systems
The W634GU6RB-11 is ideal for embedded systems requiring high memory density in a small footprint. Its 96-ball VFBGA package saves PCB space, and the 1.35V operation is compatible with low-power embedded processors. The 1866 MT/s data rate supports multimedia applications. Features like ZQ calibration and ODT simplify PCB layout, reducing design time. The -40°C to +95°C range suits outdoor and automotive-adjacent applications.
Recomendado
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the W634GU6RB-11 provides high-bandwidth memory for video processing and user interfaces. Its 4Gb capacity supports multiple HD streams, and the 1.35V supply reduces power consumption in always-on devices. The 933 MHz clock enables smooth graphics rendering. The compact VFBGA package fits slim enclosures, and features like data mask improve write efficiency.
Recomendado
Automotive Infotainment
The W634GU6RB-11 supports automotive infotainment systems requiring high memory bandwidth for navigation and media playback. Its wide temperature range (-40°C to +95°C) meets automotive requirements, and the 1.35V supply reduces heat in the cabin. The 1866 MT/s data rate handles multiple displays and audio streams. Features like write leveling ensure reliable operation in noisy automotive environments. The VFBGA package is AEC-Q100 qualified in some variants.
Recomendado
Data Center Servers
In data center servers, the W634GU6RB-11 provides high-density, low-power memory for virtualization and cloud computing. Its 4Gb capacity and 1866 MT/s data rate support high-performance computing. The 1.35V operation reduces energy costs in large server farms. The 96-ball VFBGA package enables high-density DIMM designs. Features like auto self-refresh and ODT improve reliability in 24/7 operation.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para W634GU6RB-11 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | W634GU6RB11I | W634GU6RB-12 | K4B4G1646E-BYMATCV |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 933 MHz | 933 MHz | 800 MHz | 933 MHz |
| Data Rate | 1866 MT/s | 1866 MT/s | 1600 MT/s | 1866 MT/s |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Diferenciadores clave
- Industrial temperature range (frente a W634GU6RB-12)
- Higher clock speed (frente a W634GU6RB-12)
- Same-brand drop-in compatibility (frente a K4B4G1646E-BYMATCV)
Notas de diseño
Ensure stable 1.35V supply with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each VDD and VDDQ pin. Use a low-ESR bulk capacitor (10uF) per power rail. Verify the power management IC can source the required current during burst operations.
Follow JEDEC DDR3L layout guidelines for signal integrity. Match trace lengths for DQ, DQS, and address/command signals. Maintain 50-ohm impedance for data lines. Use ground planes to minimize noise. Keep the VFBGA package's thermal pad connected to a large copper pour for heat dissipation.
Use on-die termination (ODT) settings to match the bus impedance. Enable write leveling for multi-rank configurations. Place series termination resistors near the driver if needed. Simulate the memory bus with IBIS models to verify signal integrity at 1866 MT/s.
Información de cumplimiento
RoHS compliant and halogen-free per Winbond. AEC-Q100 not specified for this part.
