W634GU6RB12J - 4Gb DDR3L SDRAM 933MHz | Winbond
Référence : W634GU6RB12J ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
W634GU6RB12J Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high data rates. It is part of the DDR3L memory family, which is widely used in computing, networking, and industrial applications where power efficiency is critical.
Key features include a 4Gbit density, x16 organization, 933 MHz clock speed, and support for the DDR3L-1866 specification. The device offers a burst length of 8 and supports on-die termination (ODT) for improved signal integrity. It operates over a temperature range of -40°C to +105°C (TCASE) for the 12J industrial plus grade, making it suitable for harsh environments.
The W634GU6RB12J utilizes advanced DRAM process technology to achieve high speed and low power. It includes features such as programmable CAS latency, write leveling, and self-refresh modes to optimize performance and power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance.
Typical applications include embedded systems, networking equipment, industrial automation, and automotive infotainment. The low voltage and high speed make it ideal for power-sensitive designs that require high memory bandwidth.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to minimize crosstalk and maintain signal quality at high speeds.
Alternatives de remplacement direct pour W634GU6RB12J — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W634GU6RB12J (même facteur de forme et même empreinte) — différant par Operating Temperature, Package, Supply Voltage, Memory Size, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W634GU6RB-11
✅ Remplacement direct✓ En stock
$13.5227 / unité
Voir la fiche technique →W634GU6NB12J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W634GU6NB12I
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →IS43TR16512B-15HB
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
W634GU6RB12J Valeurs maximales et caractéristiques électriques
| Type de mémoire | SDRAM - DDR3L |
| Taille de mémoire | 4Gbit |
| Organisation de la mémoire | 256M x 16 |
| Interface | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35V |
| Boîtier | 96-VFBGA (7.5x13) |
| Température de fonctionnement | -40°C to +105°C (TCASE) |
| Speed Grade | 12J (DDR3L-1866) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| Burst Length | 8 |
| On-Die Termination | Yes |
Configuration des broches de W634GU6RB12J
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
Applications typiques
W634GU6RB12J convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The W634GU6RB12J provides high-density, low-power memory for embedded processors and SoCs. Its 4Gbit capacity and 933 MHz speed support demanding applications like real-time data processing and multitasking. The 1.35V operation reduces power consumption, extending battery life in portable systems. The 96-VFBGA package fits compact PCB designs, enabling space-efficient embedded modules.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB12J offers the bandwidth and capacity needed for packet buffering and routing tables. Its 933 MHz clock and 20 ns access time ensure low-latency data transfer. The industrial temperature range (-40°C to +105°C) makes it suitable for outdoor and industrial networking gear. The low 1.35V supply reduces heat generation in dense line cards.
Recommandé
Industrial Automation
The W634GU6RB12J is ideal for industrial controllers and PLCs that require reliable memory in harsh environments. Its extended temperature range and RoHS compliance ensure long-term reliability. The 4Gbit capacity supports complex control algorithms and data logging. The parallel interface simplifies integration with industrial SoCs and FPGAs.
Recommandé
Automotive Infotainment
The W634GU6RB12J meets the temperature and reliability requirements for automotive infotainment systems. Its 933 MHz speed supports high-resolution displays and audio processing. The 1.35V operation reduces power draw, important for vehicle electrical systems. The 96-VFBGA package withstands vibration and thermal cycling.
Recommandé
Consumer Electronics
In smart TVs, set-top boxes, and gaming consoles, the W634GU6RB12J provides the memory bandwidth for smooth multimedia playback. Its low power consumption is ideal for energy-efficient designs. The 4Gbit capacity supports multiple applications simultaneously. The compact package enables slim device designs.
Recommandé
Test and Measurement
The W634GU6RB12J is used in oscilloscopes, logic analyzers, and data acquisition systems where high-speed data capture is essential. Its 933 MHz clock and 20 ns access time enable fast data buffering. The industrial temperature range ensures accuracy in varying lab conditions. The low voltage reduces noise in sensitive measurement circuits.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W634GU6RB12J — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W634GU6RB-11 | W634GU6NB12J | W634GU6NB12I |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Winbond Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C |
| Speed Grade | 12J (DDR3L-1866) | -11 (DDR3L-1600) | 12J (DDR3L-1866) | 12I (DDR3L-1600) |
Principaux différenciateurs
- Higher speed grade (DDR3L-1866) compared to -11 variant (vs W634GU6RB-11)
- Extended temperature range up to 105°C (vs W634GU6NB12I)
- Same package and pinout as other Winbond DDR3L variants (vs W634GU6NB12J)
Notes de conception
For DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to minimize skew. Use ground planes beneath the memory to reduce noise.
Decouple the VDD pins with 0.1uF and 1uF capacitors placed as close as possible to the device. Use a 10uF bulk capacitor on the power plane. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity.
The W634GU6RB12J can dissipate up to 1.5W under heavy load. Ensure adequate airflow or a thermal pad to keep the case temperature below 105°C. The 96-VFBGA package has a thermal resistance of approximately 20°C/W.
Informations de conformité
Winbond states all Flash products are Halogen-Free and RoHS compliant. AEC-Q100 not applicable for DRAM.
