W634GU6RB12J - 4Gb DDR3L SDRAM 933MHz | Winbond
料号： W634GU6RB12J ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $6 | $6,000.00 |
W634GU6RB12J 概述
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high data rates. It is part of the DDR3L memory family, which is widely used in computing, networking, and industrial applications where power efficiency is critical.
Key features include a 4Gbit density, x16 organization, 933 MHz clock speed, and support for the DDR3L-1866 specification. The device offers a burst length of 8 and supports on-die termination (ODT) for improved signal integrity. It operates over a temperature range of -40°C to +105°C (TCASE) for the 12J industrial plus grade, making it suitable for harsh environments.
The W634GU6RB12J utilizes advanced DRAM process technology to achieve high speed and low power. It includes features such as programmable CAS latency, write leveling, and self-refresh modes to optimize performance and power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance.
Typical applications include embedded systems, networking equipment, industrial automation, and automotive infotainment. The low voltage and high speed make it ideal for power-sensitive designs that require high memory bandwidth.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to minimize crosstalk and maintain signal quality at high speeds.
直接替换替代料： W634GU6RB12J ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： W634GU6RB12J （相同外形与封装尺寸） ——差异在于 Operating Temperature, Package, Supply Voltage, Memory Size, CAS Latency.
快速对比工具——选择替代料号进行并排对比：
W634GU6RB-11
✅ 直接替换✓ 有现货
$13.5227 / 个
查看数据手册 →W634GU6NB12J
✅ 直接替换📋 参考替代料（不在目录中）
W634GU6NB12I
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16TW-107
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$14.1 / 个
查看数据手册 →IS43TR16512B-15HB
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
W634GU6RB12J 最大额定值与电气特性
| 存储器类型 | SDRAM - DDR3L |
| 存储容量 | 4Gbit |
| 存储组织 | 256M x 16 |
| 接口 | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| 电源电压 | 1.35V |
| 封装 | 96-VFBGA (7.5x13) |
| 工作温度 | -40°C to +105°C (TCASE) |
| Speed Grade | 12J (DDR3L-1866) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| 无卤 | Yes |
| Burst Length | 8 |
| On-Die Termination | Yes |
W634GU6RB12J 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDD — Power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
典型应用
W634GU6RB12J 适用于 6 应用s: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The W634GU6RB12J provides high-density, low-power memory for embedded processors and SoCs. Its 4Gbit capacity and 933 MHz speed support demanding applications like real-time data processing and multitasking. The 1.35V operation reduces power consumption, extending battery life in portable systems. The 96-VFBGA package fits compact PCB designs, enabling space-efficient embedded modules.
推荐
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB12J offers the bandwidth and capacity needed for packet buffering and routing tables. Its 933 MHz clock and 20 ns access time ensure low-latency data transfer. The industrial temperature range (-40°C to +105°C) makes it suitable for outdoor and industrial networking gear. The low 1.35V supply reduces heat generation in dense line cards.
推荐
Industrial Automation
The W634GU6RB12J is ideal for industrial controllers and PLCs that require reliable memory in harsh environments. Its extended temperature range and RoHS compliance ensure long-term reliability. The 4Gbit capacity supports complex control algorithms and data logging. The parallel interface simplifies integration with industrial SoCs and FPGAs.
推荐
Automotive Infotainment
The W634GU6RB12J meets the temperature and reliability requirements for automotive infotainment systems. Its 933 MHz speed supports high-resolution displays and audio processing. The 1.35V operation reduces power draw, important for vehicle electrical systems. The 96-VFBGA package withstands vibration and thermal cycling.
推荐
Consumer Electronics
In smart TVs, set-top boxes, and gaming consoles, the W634GU6RB12J provides the memory bandwidth for smooth multimedia playback. Its low power consumption is ideal for energy-efficient designs. The 4Gbit capacity supports multiple applications simultaneously. The compact package enables slim device designs.
推荐
Test and Measurement
The W634GU6RB12J is used in oscilloscopes, logic analyzers, and data acquisition systems where high-speed data capture is essential. Its 933 MHz clock and 20 ns access time enable fast data buffering. The industrial temperature range ensures accuracy in varying lab conditions. The low voltage reduces noise in sensitive measurement circuits.
推荐
推荐产品汇总
工程参考数据： W634GU6RB12J ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | W634GU6RB-11 | W634GU6NB12J | W634GU6NB12I |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Winbond Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C |
| Speed Grade | 12J (DDR3L-1866) | -11 (DDR3L-1600) | 12J (DDR3L-1866) | 12I (DDR3L-1600) |
关键差异点
- Higher speed grade (DDR3L-1866) compared to -11 variant （对比 W634GU6RB-11)
- Extended temperature range up to 105°C （对比 W634GU6NB12I)
- Same package and pinout as other Winbond DDR3L variants （对比 W634GU6NB12J)
设计说明
For DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to minimize skew. Use ground planes beneath the memory to reduce noise.
Decouple the VDD pins with 0.1uF and 1uF capacitors placed as close as possible to the device. Use a 10uF bulk capacitor on the power plane. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity.
The W634GU6RB12J can dissipate up to 1.5W under heavy load. Ensure adequate airflow or a thermal pad to keep the case temperature below 105°C. The 96-VFBGA package has a thermal resistance of approximately 20°C/W.
合规信息
Winbond states all Flash products are Halogen-Free and RoHS compliant. AEC-Q100 not applicable for DRAM.
