IRF9Z34NPBF vs IRFR5505TRLPBF مقایسه
مقایسه دقیق کنار به کنار IRF9Z34NPBF توسط Infineon و IRFR5505TRLPBF توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IRF9Z34NPBF | IRFR5505TRLPBF |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| محدوده دمای کاری | -55C to +175C (junction) | -55 °C to +175 °C |
| بسته‌بندی | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| نوع نصب | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | IR MOSFET™ (HEXFET® generation 5) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| وضعیت RoHS | Compliant | — |
| Polarity | — | P-Channel |
| MOSFET Operating Mode | — | Enhancement |
| VDS (Drain-Source Voltage) | — | -55 V |
| VGS (Gate-Source Voltage) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | -18 A (Tc) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max | — | 110 mOhm (VGS = -10 V) |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Power Dissipation (PD) | — | 57 W (Tc = 25 °C) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC] |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| سطح MSL | — | 1 |