MPXV12GW6U vs MPX5010DP مقایسه
مقایسه دقیق کنار به کنار MPXV12GW6U توسط NXP Semiconductors و MPX5010DP توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | MPXV12GW6U | MPX5010DP |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | Pressure Sensors | Pressure Sensors |
| وضعیت چرخه عمر | فعال | فعال |
| Operating Pressure Range | 0 kPa to 10 kPa (1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| نوع خروجی | Analog Millivolt (Wheatstone bridge) | Analog, ratiometric |
| Output Span | 0 mV to 55 mV at 3 V excitation | — |
| Excitation Voltage | 3 V typical | — |
| Pressure Port Type | Top port, 0.22" (5.59 mm) tube | — |
| بسته‌بندی / کیس | 8-SMD, Gull Wing, Top Port | — |
| نوع نصب | Surface Mount | Through-hole (SIP) |
| دمای کاری | -40 C to +125 C | 0 C to +85 C (compensated) |
| Accuracy | [DATA_NEEDED: linearity + temperature coefficient] | — |
| Configuration | Vented Gauge (reference to atmosphere) | — |
| Sensor Technology | Silicon piezoresistive (MEMS strain gauge) | — |
| Off-Pressure Offset | 0 mV minimum (no offset specified) | — |
| Compensation | Uncompensated (external calibration required) | — |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | [DATA_NEEDED: MSL rating] | — |
| Bridge Resistance | [DATA_NEEDED: input / output bridge impedance] | — |
| Typical Sensitivity | [DATA_NEEDED: mV/kPa at 3 V] | — |
| Pressure Type | — | Differential |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| محدوده ولتاژ خروجی | — | 0.2 V to 4.7 V |
| ولتاژ تغذیه | — | 4.75 V to 5.25 V (5 V typical) |
| جریان تغذیه | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| بسته‌بندی | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |