MRF8S18120HR3 vs MRF8S19260HSR6 مقایسه
مقایسه دقیق کنار به کنار MRF8S18120HR3 توسط NXP Semiconductors و MRF8S19260HSR6 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ فعال
مقایسه مشخصات
| پارامتر | MRF8S18120HR3 | MRF8S19260HSR6 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HR3 | MRF8S19260HSR6 |
| نوع ترانزیستور | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | Class AB and Class C capable |
| بسته‌بندی | NI-780H (3-pin ceramic, flangeless) | — |
| نوع نصب | Surface Mount / Screw-down heatsink | Chassis / Flange Mount (through-hole RF bolt-down) |
| Target Application | GSM, GSM EDGE base station PA | — |
| وضعیت RoHS | Compliant per NXP product page | Compliant |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| بسته‌بندی / کیس | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |