Semi-conducteurs discrets
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Produits (1814)
MRF21060R3 - 60W, 2.1GHz RF Power MOSFET | Freescale Semiconductor
The Freescale Semiconductor (formerly Motorola) MRF21060R3 is a 60 W lateral N-channel RF power MOSFET designed for PCN and PCS base station applications in the 2.1 to 2.2 GHz band. Housed in the NI-780H-2L ceramic package (CASE 465-06, STYLE 1), it operates from a 28 V supply and delivers typical W-CDMA performance at 2140 MHz. The device uses Freescale's lateral MOSFET structure optimized for high gain (12.5 dB typical) and ruggedness in multicarrier amplifier service. RF power MOSFETs are specialized transistors built to deliver high RF output power at microwave frequencies with high gain and efficiency. Lateral N-channel MOSFETs place the source, gate, and drain laterally on the silicon surface, which reduces parasitic capacitances compared to vertical DMOS structures and yields higher gain at UHF and microwave frequencies. The MRF21060R3 belongs to the RF power transistor hierarchy: transistor -> MOSFET -> RF MOSFET -> lateral N-channel RF power MOSFET -> semiconductor device. Key specifications include 60 W CW output power, 28 V drain supply, 500 mA quiescent drain current, 12.5 dB power gain at 2.1 GHz, and operation across 2.1 to 2.2 GHz. The device is designed for W-CDMA, CDMA, TDMA, GSM, and multicarrier amplifier applications. Its lateral geometry provides consistent gain-bandwidth product across the 2.1 to 2.2 GHz operating window, and internal matching networks simplify PCB integration in push-pull or single-ended final stages. The MRF21060R3 is built for base station power stages where linearity and ruggedness are equally important. Freescale's laterally-diffused MOSFET (LDMOS) variant of this family supports high peak-to-average ratios required by modern digital modulation schemes. The NI-780H package offers a ceramic flange with a low thermal resistance path, enabling reliable 60 W CW operation at typical cellular base station duty cycles. Typical applications include W-CDMA/UMTS base station final stages, PCS/personal communications network power amplifiers, multicarrier GSM/EDGE amplifier modules, and 2.1-2.2 GHz RF power blocks for repeaters and small-cell infrastructure. The part also serves in defense and aerospace telemetry links operating within the same band. When designing with this part, ensure the device is biased into Class AB at the rated 500 mA quiescent current for the best linearity/efficiency trade-off. The ceramic flange requires a properly torqued heatsink with thermal compound to maintain junction temperature below the rated 200 C maximum. This page synthesizes distributor availability, drop-in alternatives drawn from the same NI-780 family, and applied design notes that go beyond the bare datasheet to accelerate your base-station PA design.
MRF21085R3 - 90W 28V W-CDMA RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF21085R3 is a 90 W lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110–2170 MHz band. Housed in the NI-780H-2L ceramic package, this RF power field effect transistor provides 13.6 dB typical gain at 2170 MHz from a 28 V supply and is rated for 90 W P1dB-class output power, making it suitable for TDMA, CDMA, and multicarrier amplifier applications in modern cellular infrastructure. RF power MOSFETs are specialized lateral metal-oxide-semiconductor field effect transistors optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs, RF power MOSFETs use a lateral geometry on a high-resistivity silicon substrate to minimize parasitic capacitance and maximize breakdown voltage. They sit within a broader product hierarchy of power management semiconductors, which spans linear regulators, DC-DC converters, and discrete RF transistors. The MRF21085R3 family specifically targets the 2.1 GHz UMTS/W-CDMA downlink band, a hypernym class that also includes similar LDMOS devices from competitors. Key features include 90 W CW output power capability, 13.6 dB typical power gain, 28 V drain supply operation, and high drain efficiency optimized for W-CDMA modulation. The device's lateral construction on a thermally optimized ceramic flange carrier (NI-780H-2L) enables direct mounting to a heatsink or system chassis for thermal dissipation. Internal matching simplifies external PCB design and reduces component count in the final amplifier circuit. The MRF21085R3 architecture is based on NXP's (formerly Freescale, formerly Motorola Semiconductor) high-voltage lateral MOSFET process. This process delivers high ruggedness into mismatched loads, low memory effects for wideband signals such as W-CDMA, and excellent thermal stability under continuous-wave operation. The device's gold metallization and hermetic ceramic package provide long-term reliability in base-station environments. Typical applications include W-CDMA base station power amplifiers in the 2110–2170 MHz UMTS band, TDMA and CDMA driver or final-stage amplifiers, and multicarrier power amplifiers for cellular repeaters. The 90 W output capability allows the device to be used as the final stage in macro-cell base stations or as a driver in higher-power amplifier chains. When designing with the MRF21085R3, ensure proper RF board layout with controlled-impedance transmission lines to the gate and drain. The flange must be properly mounted to a heatsink with adequate thermal compound to maintain junction temperature within safe limits. Bias sequencing and proper matching network design per NXP application notes are critical for achieving rated linearity and efficiency in W-CDMA service. This page synthesizes distributor stock levels, parametric drop-in alternatives, and practical RF amplifier design notes that complement the official NXP datasheet for engineers evaluating 90 W 2.1 GHz RF MOSFET options.
MRF21125R3 - 125W, 28V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF21125R3 is a 125 W lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110–2170 MHz band. It operates from a 28 V rail, delivers 13 dB of typical power gain at 2.11–2.17 GHz, and is housed in the NI-880H-2L ceramic flange-mount package (CASE 465B-03). The device is built on a lateral DMOS process that combines high breakdown voltage (65 V) with low parasitic capacitance, making it well-suited to multicarrier, TDMA, and CDMA amplifier topologies. A RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver large amounts of RF energy at high frequencies. Within the wireless transmitter hierarchy, the device sits at the final PA (power amplifier) stage, after the driver amplifier and before the bandpass filter and antenna. Compared with earlier bipolar RF transistors, lateral MOSFETs offer higher gain, better thermal stability, and easier broadband matching, which is why they dominate modern cellular base-station PAs. Key features of the MRF21125R3 include a typical quiescent current of 1600 mA for Class AB operation, a maximum dissipated power of 330 W, an absolute maximum junction temperature of 200 °C, and a two-terminal flange configuration. The lateral N-channel architecture supports stable operation across wide duty cycles and is suitable for both continuous-wave and pulsed waveforms used in 3G multi-carrier environments. From a system standpoint, the MRF21125R3 is typically biased from a regulated 28 V supply and matched with microstrip or stripline networks on a low-loss PCB such as Rogers RO4003C. Designers pair it with a dedicated gate driver and a circulator/isolator to protect the device from VSWR excursions. The ceramic NI-880 package provides a low thermal resistance path to the heatsink, which is essential because at 125 W RF output and ~50% efficiency roughly 125 W is dissipated as heat. Typical applications include W-CDMA macro-cell base-station power amplifiers, PCS/cellular infrastructure, multicarrier TDMA/CDMA line-ups, and WLL (wireless local loop) transceivers. It can also serve as a final stage in PCN/cellular radio amplifiers when biased in Class AB. When designing with this device, ensure the heatsink is sized for at least 200 W continuous dissipation and that the input/output matching networks are tuned for the 2110–2170 MHz band. Always operate below the 65 V drain breakdown and respect the 200 °C junction limit to maintain long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet for engineers evaluating the MRF21125R3.
MRF24300NR3 - 300W LDMOS RF MOSFET, 2450 MHz | NXP Semiconductors
The NXP Semiconductors MRF24300NR3 is an N-channel enhancement-mode laterally-diffused metal-oxide-semiconductor (LDMOS) RF power transistor rated for 300 W continuous wave output at 2450 MHz from a 32 V supply, packaged in the ceramic OM-780-2 (SOT1823) flange-mount case. The device targets 2400-2500 MHz industrial, scientific, and medical (ISM) bands, providing 13.1 dB typical power gain at 2450 MHz and is qualified for CW, pulse, and linear operation, allowing amplifier designers to standardize one transistor across industrial heating, plasma generation, and RF lighting load profiles. An LDMOS transistor is a laterally-diffused MOSFET variant engineered for high-power RF amplification. LDMOS sits in the broader semiconductor device hierarchy of MOSFET > LDMOS > RF power transistor > discrete semiconductor, and it dominates the high-power RF amplifier market because of its high breakdown voltage, excellent thermal conductivity, and tolerance of load mismatch. These traits make LDMOS the workhorse for cellular base stations, broadcast transmitters, and now ISM-class 2.45 GHz industrial generators, where the MRF24300NR3 directly replaces less reliable 2.45 GHz magnetrons. Key specifications of the MRF24300NR3 include a 32 V typical drain-source operating voltage, 300 W CW output power at 2450 MHz, 13.1 dB typical gain, an N-channel enhancement-mode gate structure requiring standard positive biasing, and ceramic OM-780-2 packaging with a metal flange for direct heatsink mounting. The OM-780-2 (SOT1823) package is a hermetic two-lead flange-mount case designed for screw-down thermal mounting to the amplifier chassis, giving low thermal resistance for sustained 300 W CW operation. Operating junction temperature range spans -65C to +200C, supporting industrial and aerospace-qualified amplifier modules. Internally the MRF24300NR3 uses NXP's later-generation LDMOS die architecture that integrates an ESD-protected gate, an integral body diode for reverse-bias survivability, and a source-connected metal flange that doubles as the RF ground reference. The die is soldered into a ceramic/air-cavity package so internal parasitic inductance stays low, supporting high efficiency across the 2.4-2.5 GHz ISM band. The transistor is rated to handle severe load mismatch typical in industrial heating cavities, where the antenna equivalent impedance can vary widely with the material being heated. Typical applications for the MRF24300NR3 include 2.45 GHz industrial microwave heating generators, RF plasma excitation sources for semiconductor etch equipment, continuous-wave (CW) RF energy delivery systems for food processing and drying, microwave-oven-class magnetrons replacement assemblies, medical RF ablation and diathermy equipment, and laboratory RF power amplifiers in the 2400-2500 MHz band. Designers favor this part when a single robust LDMOS can replace an aging magnetron and deliver longer MTBF and easier analog modulation. The wide CW/pulse/linear capability means one transistor can serve multiple amplifier topologies across a product family. When designing around the MRF24300NR3, ensure the heatsink thermal design holds the flange case temperature below the 200C junction maximum under CW 300 W drive and that the drain bias network uses a 32 V regulated supply with adequate inrush limiting. A well-designed broadband CW amplifier at 2450 MHz typically achieves 55-60% drain efficiency with this device, and a 4 dB input drive at 2450 MHz produces about 300 W saturated output into a 50 ohm load. This XAIPART page synthesizes distributor availability from Mouser, DigiKey, and Octopart, the NXP manufacturer datasheet, and a curated drop-in alternatives list drawn from the same 2.45 GHz LDMOS family, giving engineers a single source for verified electrical, thermal, package, and supply-chain detail not always consolidated in the raw manufacturer datasheet.
MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP
The NXP MRF377HR3 is a 45 W, 32 V lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications spanning 470 to 860 MHz. Housed in the NI-860C3 ceramic package and internally matched for push-pull operation, it delivers 18.2 dB typical power gain at 860 MHz and is characterized with series equivalent large-signal impedance parameters to simplify transmitter design. The device targets large-signal common-source amplifier stages in 32 V digital television transmitter equipment and similar UHF broadband power applications. An RF power MOSFET is a discrete transistor optimized to deliver significant continuous or pulsed RF output power at high frequencies, typically used as the final amplification stage in a transmitter chain. Lateral N-channel enhancement-mode MOSFETs combine a low-loss silicon die structure with a high-impedance gate, enabling high gain and broadband matching in a single die. Within the wider semiconductor taxonomy, RF power MOSFETs belong to the discrete power transistor family (MOSFET > transistor > discrete semiconductor), distinct from small-signal MOSFETs used for switching or analog signal processing. Their high drain voltage tolerance (32 V or more) and matched input/output impedances make them the workhorse of UHF/VHF broadcast, industrial RF heating, and avionics transmitter designs. The MRF377HR3 offers broadband performance across the entire 470-860 MHz UHF television band, eliminating band-specific matching networks and reducing tuner count in multi-band transmitters. Its 45 W CW power capability at 32 V provides ample margin for DVB-T, ATSC, and ISDB-T transmitter outputs, while its internally matched push-pull configuration halves the matching complexity for the designer. The 18.2 dB typical gain reduces driver-stage gain requirements, allowing simpler and less expensive exciter chains. Push-pull operation also inherently suppresses even-order harmonics, improving spectral purity without additional filtering. Typical deployments include UHF digital television transmitters in the 470-862 MHz broadcast band, broadband industrial RF heating and plasma generation systems, and avionics/PMR linear amplifier stages where broadband matching is valued. The device's combination of high gain and broadband response also suits scientific and medical RF applications such as MRI RF amplifiers and particle accelerator drivers operating in the UHF range. Designers should note the device is rated for push-pull operation only - a single-ended bias configuration will not deliver the rated 45 W output and may damage the die. Adequate RF Choke selection, low-loss transmission-line matching, and a robust 32 V DC supply with sub-millisecond overcurrent protection are essential to keep junction temperature within the 200 C maximum rating. The NI-860C3 ceramic flange must be bolted to a heatsink with the specified torque and thermal compound to maintain the rated thermal resistance. This page consolidates manufacturer datasheet figures, distributor pricing, drop-in alternatives, and practical amplifier-design guidance not collated in a single location on the NXP datasheet, providing an actionable reference for UHF power-amplifier engineers.
MRF426 - 25W NPN RF Power Transistor | MACOM | 1.5-30MHz
MACOM Technology Solutions MRF426 is an NPN bipolar silicon RF power transistor designed for high-gain driver and output stages in 1.5–30 MHz HF/SSB equipment. The device provides 25 W PEP output power, 22 dB minimum gain, and 35% efficiency at the characterized 28 V, 30 MHz operating condition. It is supplied in a ceramic flange-mount package identified as CASE211-07, STYLE 1. An RF bipolar power transistor is a semiconductor device optimized to amplify or generate high-frequency RF power. Unlike a general-purpose transistor, its junction layout, package construction, thermal path, and RF impedance are tailored for RF operation. Within the power-semiconductor hierarchy, the MRF426 is a silicon NPN RF power transistor intended for transmitter or amplifier stages operating in the shortwave and HF bands. Key features include a 35 V collector-emitter voltage rating, 3 A collector current capability, 25 W PEP output power, 22 dB minimum gain, and 35% efficiency. The characterized frequency range extends from 2 MHz minimum to 30 MHz maximum in the manufacturer product specifications, while the device is described for 1.5–30 MHz HF/SSB applications. Intermodulation distortion is specified at 30 dB maximum at 25 W PEP under the characterized test condition. The MRF426 uses a ceramic flange package with a chassis-mount configuration. Its construction supports RF power handling while requiring careful thermal design at the flange and PCB interface. The device is a bipolar NPN transistor, and its datasheet identifies it as 100% tested for the stated RF performance. S-parameter information is available through the manufacturer technical resources. Typical applications include HF radio transmitters, single-sideband transmitters, linear RF amplifiers, driver stages, and output stages in communication equipment operating within the 1.5–30 MHz range. It is most appropriate where the design requires a dedicated RF power transistor rather than a low-frequency switching transistor. For reliable operation, the RF amplifier layout should provide controlled impedance, short return paths, adequate input and output matching, and a low-inductance thermal connection to the flange. Biasing and drive must remain within the manufacturer’s absolute maximum and characterized conditions. Verify package pinout, thermal requirements, and operating limits against the current MACOM datasheet before finalizing a new design. This page consolidates manufacturer specifications, distributor references, verified equivalent-part information, and application-oriented design guidance for engineers evaluating the MRF426 in HF/SSB RF power systems.
MRF5P21045NR1 - 10W W-CDMA LDMOS RF Power Transistor | NXP
The NXP MRF5P21045NR1 is a dual-path, N-channel enhancement-mode lateral MOSFET RF power transistor designed for W-CDMA base station applications from 2110 to 2170 MHz, delivering 10 W average output power at 28 V with 14.5 dB gain in a TO-270 WB-4 (overmolded plastic) package. It is also qualified for TDMA, CDMA, and multicarrier amplifier applications. RF power transistors in the LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) family are specialized MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and high gain/density, sitting within the broader taxonomy of RF power transistors → RF MOSFETs → LDMOS → discrete semiconductors. The MRF5P21045NR1 features a 65 V drain-source voltage rating, 14.5 dB typical power gain at 2.14 GHz, and integrated dual-path topology that supports Doherty, quadrature, single-ended, and push-pull amplifier configurations. Internal matching and overmolded packaging minimize parasitic losses and provide stable thermal performance. The device uses NXP's high-voltage HV5 LDMOS process technology, which provides high ruggedness into mismatched loads, making it tolerant of antenna VSWR variations common in field deployments. The 28 V supply rail aligns with mainstream macro-cell base-station architecture, simplifying power supply design. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, Doherty final-stage amplifiers for high-efficiency operation, multi-carrier driver stages, and push-pull amplifier modules for wireless infrastructure. The 2110-2170 MHz band covers the UMTS Band I downlink. For thermal management, the TO-270 plastic package requires a properly soldered PCB land pattern and adequate copper thermal vias to dissipate continuous RF and DC losses. Designers should follow NXP's application note AN1907 for PCB layout and thermal via patterns to ensure long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on standalone manufacturer datasheets or distributor catalog pages.
MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP
The NXP MRF5P21180HR5 is a 2170 MHz, 38 W W-CDMA lateral N-channel RF power MOSFET housed in the NI-1230 (5-pin) ceramic package and built on NXP's rugged Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. It is designed for W-CDMA base-station applications in the 2110-2170 MHz band and is characterized at 28 V with 1.6 A quiescent current at a 14 dB power gain, making it a workhorse RF final-stage device for 2-carrier W-CDMA driver and output stages. An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency, high-power operation in the 1-3 GHz range, where it dominates macro-cell base-station power amplifiers because of its high breakdown voltage, excellent linearity, and ease of impedance matching. Within the semiconductor taxonomy, this device sits at: LDMOS -> RF MOSFET -> power MOSFET -> discrete semiconductor. The MRF5P21180HR5 is positioned for Class-AB amplification of digitally modulated carriers, including TDMA, CDMA, and multicarrier W-CDMA waveforms. Key differentiating features include 38 W average output power (P1dB-class for two-carrier W-CDMA), 14 dB power gain at 2.16 GHz, an internal ESD protection network, and a thermally enhanced NI-1230 ceramic package with a bolt-down flange for direct heatsink mounting. The device is rated for continuous-wave operation at 28 V VDD, with operating voltage up to 65 V transient on the drain. The internal LDMOS die architecture places the source connections on the package flange to minimize common-source inductance, which directly improves broadband stability and gain at 2 GHz. NXP's 5th-generation LDMOS process integrates ESD diodes and a gate-source zener protection network on-die so the device tolerates routine handling and brief over-voltage events without external protection components. The matched input and output impedances are documented in the manufacturer datasheet for Doherty and single-ended PA topologies. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE Band 7 (uplink 2500-2690 MHz is a stretching use case, primary 2110-2170 MHz), TDMA and CDMA driver stages, multicarrier amplifier (MCPA) final stages, and Class-AB pulsed-RF amplifiers for defense radar and avionics. The 38 W envelope supports small-cell and micro-cell final stages as well as repeater PA lineups. When designing with this part, provide 50 ohm microstrip or stripline transitions to the input gate and output drain pads, place 100-1000 pF decoupling capacitors within 5 mm of the drain pad, and mount the flange to a copper or aluminum heatsink with thermal grease. Always run the gate at a negative bias (typically -3 V) for Class-AB operation, and use a gate-decay sequence to prevent thermal runaway during high-CW operation. This page synthesizes distributor pricing snapshots, drop-in alternates from the same NXP RF power family, and practical thermal/PCB guidance not collated in the manufacturer datasheet alone.
MRF5P21240HR6 - 52W 2110-2170 MHz W-CDMA RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF5P21240HR6 is a 52 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110 to 2170 MHz band. Housed in the NI-1230 ceramic package (commonly referenced as the HR6 form factor), it delivers 13 dB power gain with a 28 V supply and supports 2-carrier W-CDMA at 52 W average output. The device is well suited for Class AB operation in PCN-PCS/cellular radio and WLL infrastructure. RF power transistors such as the MRF5P21240HR6 sit within the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family - a subclass of power MOSFETs designed to combine high RF gain and ruggedness with reasonable cost. Within the broader taxonomy they are power transistors -> discrete semiconductors -> RF power devices. LDMOS has become the dominant technology for sub-3 GHz base-station PA stages because of its high breakdown voltage, excellent linearity gain in swept-back-off RF conditions, and ability to handle high peak-to-average ratios typical of multicarrier W-CDMA signals. Key features include a minimum drain-source breakdown of 65 V (giving ample headroom above the 28 V operating rail), 603 W absolute maximum power dissipation, a common-source dual-element configuration, and surface-mount ceramic packaging. The device's 13 dB gain at 2.11 GHz and its high-efficiency performance under 2-carrier W-CDMA drive conditions make it a workhorse final-stage transistor for UMTS Band I (uplink/downlink) power amplifiers. Architecturally, the MRF5P21240HR6 is built on NXP's 7th-generation (Gen7) high-voltage LDMOS process, which places two dies inside a single ceramic NI-1230 housing to achieve the 52 W average output level. Internally matched on the input and partially matched on the output for the 2110-2170 MHz band, the device is biased at IDQ = 2200 mA with VDD = 28 V to deliver its rated linear output power. Typical applications include W-CDMA/UMTS base-station PAs (Band I), 2-carrier multi-carrier amplifier bricks, and cellular repeaters. Designers choose this part when they need proven LDMOS ruggedness in surface-mount ceramic packaging for high-power macro-cell or micro-cell infrastructure. A practical design tip: the HR6 suffix denotes a lower-thermal-resistance ceramic package compared to the older MRF5P21240R6. When migrating from R6 to HR6 the PCB land pattern is identical, so existing base-station layouts can be reused without rework. Always verify load-pull impedance at your specific bias and frequency before finalizing the output matching network.
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
The NXP (formerly Freescale Semiconductor) MRF5S19060MR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband commercial and industrial base-station applications in the 1930 MHz to 1990 MHz band, including 2 x N-CDMA, PCS, and PCN infrastructure. It delivers 12 W average output power (60 W PEP typical class-AB final-stage) at 28 V, with a nominal power gain of 14 dB and roughly 45% drain efficiency at the rated condition. An RF power MOSFET is a lateral double-diffused (LDMOS) transistor whose internal layout combines a short, low-loss gate structure with a high breakdown drain drift region, enabling high gain, broadband operation, and high ruggedness versus older bipolar or GaAs parts. LDMOS technology inherits from power MOSFET process nodes and is the dominant building block for sub-6 GHz base-station power amplifiers because it pairs silicon-economy pricing with sufficient RF performance for cellular PA macros and small cells. Key features of the MRF5S19060MR1 include integrated ESD protection, an internal input matching network that simplifies PCB-level wideband design, gold metallization on the source and gate pads for long-term reliability, and a thermally-enhanced TO-270 WB-4 ceramic package. The part is specified for class-AB operation with a quiescent point (Iq) typically set near 100 mA for linear 2 x N-CDMA waveforms. Per the NXP/Freescale datasheet, the device supports broadband performance across the full 1930-1990 MHz PCS/UMTS band without retuning. Architecturally, the MRF5S19060MR1 uses a single-stage common-source LDMOS die with on-drain feed; the WB-4 package exposes the drain on the flange while the gate and source are brought out as bond-wire leads. This pinout is the de-facto standard for the MRF5S family and the entire high-power LDMOS cellular PA market, allowing drop-in substitution within the family while differing datasheet waveform ratings distinguish individual parts. Typical applications include 2 G/3 G cellular base-station driver and final stages, WCDMA/UMTS power amplifiers, PCS repeater outputs, and broadband industrial RF heating. Designers evaluating a single part for entire PA line-ups usually prefer this family because all MRF5S19060 variants share identical matching networks and bias sequencing. For thermal design at 12 W average continuous CW power, a copper spreader that holds case temperature below 100 degrees C is required; the part is not designed for unlimited heatsink-less operation. The MRF5S19060MR1 pinout matches MRF5S19060MBR1 (Class AB vs Class B) and is footprint-identical to other MRF5S WB-4 devices, which simplifies radio maintenance and second-source planning. This page synthesizes distributor pricing, pinout, drop-in alternatives within the MRF5S family, and RF design notes that are not assembled in the manufacturer datasheet, supporting faster replacement and BOM decisions.
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
The NXP Semiconductors MRF5S19060NBR1 is an N-Channel Enhancement-Mode Lateral RF Power MOSFET designed for broadband commercial and industrial applications in the 1930 to 1990 MHz band, delivering 12 W average output power (60 W CW / peak) at 28 V from a TO-272 WB-4 over-molded plastic package. The device supplies 14 dB small-signal gain at 1990 MHz and is intended for large-signal, common-source amplifier applications in 28 Volt base station equipment. An RF Power MOSFET is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification. In the amplifier taxonomy it sits under RF power transistor -> power MOSFET -> MOSFET -> discrete semiconductor. These devices use a laterally diffused channel to reduce parasitic capacitances, allowing operation at GHz frequencies while still handling tens of watts of continuous RF power. The MRF5S19060N family is part of NXP's classic 28 V base-station driver lineup. Key electrical features include a 28 V typical drain supply, 14 dB power gain at 1.99 GHz, and a thermally-enhanced TO-272 WB-4 overmolded package that lowers thermal resistance compared with earlier ceramic flanges. Two matched die are provided in the single package (2 x N configuration) which simplifies push-pull or parallel-combined amplifier layouts and lets the designer realize wider bandwidths with fewer external matching components. Architecturally the part uses NXP's high-voltage LDMOS process combined with a thermally-conductive plastic overmold and an exposed copper flange. The lateral structure minimizes feedback capacitance and gate-to-drain charge, which is what enables 14 dB of gain and broadband operation in a single-stage final PA. The 28 V bias typical of cellular base-station PAs also simplifies power-supply design in Doherty and class-AB final stages. Typical applications are 1.9 GHz PCS / DCS / DECT base-station final PAs, 1930-1990 MHz industrial RF amplifiers, broadband driver stages for higher-power LDMOS finals, and public-safety / telemetry links requiring 12 W average at 1930-1990 MHz. Designers also use it as a gain block in two-way radio repeaters and laboratory RF power test amplifiers. When designing in this part, follow NXP reference designs for PCB material (typically RO4003 or similar low-loss laminate), apply recommended bias sequencing to avoid thermal runaway, and ensure the copper mounting footprint provides a low thermal-impedance path to the system heatsink. The overmolded package eliminates traditional bolt-down flange mounting, simplifying assembly but requiring careful thermal pad solder processing. This page synthesizes distributor pricing, RF application guidance, and pin-compatible alternatives not found on a single manufacturer or distributor page.
MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP
The NXP Semiconductors MRF5S19100HR is an N-channel enhancement-mode lateral RF power MOSFET designed for PCN and PCS base station applications covering 1930-1990 MHz, capable of delivering 22 W average output power in a 2-carrier N-CDMA configuration from a 28 V supply. The device is housed in the NI-780 ceramic package, the proven NXP RF power ceramic flange-mount format, enabling direct bolted heatsink mounting for high thermal dissipation in macro-cell base-station power amplifiers. RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power operation in wireless infrastructure. They serve as the final amplifying stage in Doherty, push-pull, or single-ended PA architectures for cellular base stations, where linearity, gain, and ruggedness under mismatch are critical. The MRF5S19090H and MRF5S19100H family sits in NXP's high-frequency RF power portfolio alongside the MRF6S21100H, MRF6S18100H, and lower-frequency 800-900 MHz MRF5S9080H parts, sharing packaging, biasing concepts, and reference designs. Compared to LDMOS competitor parts, these N-channel enhancement-mode devices offer simplified bias networks and inherent ruggedness into high VSWR loads. Key features include 22 W average two-carrier N-CDMA output power at 1930-1990 MHz, 13.9 dB power gain under CDMA drive, drain efficiency above 30% in two-carrier operation, and integrated ESD protection on the gate. The device accepts a 28 V nominal drain bias with extended operation to 65 V transient on the drain, and is fully characterized for 2-carrier N-CDMA, WCDMA, and multicarrier amplifier (MCPA) drive conditions. The NI-780 ceramic flange package provides gold metallization for high-temperature storage and operates over a -40C to +200C junction temperature range. The MRF5S19100HR uses NXP's high-frequency, high breakdown voltage laterally diffused metal-oxide-semiconductor process. Two die are combined inside the NI-780 package for the 100 W peak power rating. Internal gate-source ESD diodes, integrated input matching networks, and gold bond wires yield stable operation up to 1990 MHz with flat gain and acceptable phase variation across the band. The lateral MOSFET architecture produces low memory effects and clean AM-AM/AM-PM curves required for digital predistortion (DPD) linearization. Typical applications include 1.9-2.0 GHz GSM/EDGE, TDMA, WCDMA, and N-CDMA macro-cell base-station power amplifiers, multicarrier power amplifiers (MCPA) for PCS/PHS/cellular infrastructure, and final-stage driver amplification in higher-power Doherty configurations. The part also sees use in repeater amplifiers, microcell/picocell PA bricks, and laboratory amplifiers covering the full 1900-2000 MHz band. Designers must observe the input matching network layout guidelines in the NXP datasheet (50 ohm microstrip with source-side bias-T or quater-wavelength transformer) and provide at least 100 mm squared of copper heatsinking beneath the NI-780 flange to keep the junction below 200C. Use of WCDMA evaluation fixtures is recommended for prototyping, and the device must be biased in Class-AB with IDQ around 1000 mA for N-CDMA linear operation.
MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP
The NXP Semiconductors MRF5S19100HR5 is a 22 W RF power LDMOS transistor designed for the 1.93 GHz to 1.99 GHz UMTS/WCDMA and DCS/PCS base-station amplifier bands, housed in a 3-pin NI-780 ceramic flange package. Operating from a 28 V test supply, the device delivers 13.9 dB power gain and 22 W output power at 1.93-1.99 GHz, and is rated for a 65 V maximum drain-to-source voltage. The NI-780 flange package provides a low thermal-resistance path that bolts directly to a heatsink, enabling sustained CW-class operation in Doherty and driver stages. A radio-frequency power MOSFET (RF LDMOS) is a discrete semiconductor device that uses a laterally diffused metal-oxide-semiconductor structure to amplify high-frequency signals in the watt-to-kilowatt range. RF LDMOS transistors sit within the hierarchy: power MOSFET -> RF power transistor -> LDMOS -> semiconductor. They are valued for high gain, high breakdown voltage, and intrinsic thermal stability versus older bipolar RF power transistors, making them the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz. Key features include 22 W Pout at 1.93-1.99 GHz, 13.9 dB linear gain at 28 V bias, 65 V drain-source breakdown rating, a thermally efficient NI-780 flange package, and an integrated ESD protection structure. The rugged LDMOS die withstands severe VSWR mismatches, allowing reliable operation into poorly matched antennas without device destruction. The device is suitable for both driver and final-stage amplifier roles in Doherty configurations where high back-off efficiency is required for modern OFDM waveforms. MRF5S19100HR5 is built on NXP's sixth-generation LDMOS process, which combines a high ft with a low-feedback capacitance profile. This architecture yields flat gain across the operating band and simplifies input matching. The lateral structure also produces a positive temperature coefficient that enables safe paralleling of multiple devices in high-power final stages. Typical applications include WCDMA/UMTS base-station power amplifiers, DCS/PCS final stages, industrial RF heating, and driver stages for higher-power Doherty amplifiers. The part was released by Freescale Semiconductor (now NXP) and is widely referenced in legacy 2G-to-3G cellular infrastructure designs. When designing with this part, ensure the heatsink thermal resistance keeps the junction below the 200 C ABS maximum under worst-case load. Bias the gate at the recommended quiescent current, and provide proper sequencing on gate bias to avoid partial turn-on during supply ramps. Maintain good RF layout hygiene to prevent parasitic feedback and load-pull instability. This page combines verified distributor pricing, carefully curated drop-in alternative suggestions, and practical design notes that complement rather than duplicate the information in the manufacturer datasheet.
MRF5S19100HSR5 - 100W RF LDMOS, 1.93-1.99GHz | NXP
The NXP Semiconductors MRF5S19100HSR5 is a 100 W RF power transistor built on NXP's fifth-generation HV5 LDMOS technology, housed in the NI-780S ceramic package. It is designed for continuous-wave and pulsed RF amplification in the 1930 MHz to 1990 MHz band (typical W-CDMA, TD-SCDMA and UMTS base-station downlinks) and delivers 13.9 dB typical power gain at 1.96 GHz from a 28 V supply rail. A RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimised for high-frequency, high-power RF amplification. In the transmitter signal chain it sits between the driver stage and the output filter/combiner: it converts DC energy into a large amplified RF waveform, while its LDMOS structure simultaneously supports high drain voltage (here 28 V typical), high breakdown and high efficiency. Within the broader component hierarchy it belongs to discrete semiconductors -> MOSFETs -> RF power MOSFETs -> cellular infrastructure RF transistors. Key RF figures include 22 W typical output power (the part is normally de-rated to ~22 W average for linearity in W-CDMA line-ups), 13.9 dB power gain at 1.96 GHz, and operation from a single 28 V rail with integrated ESD protection. The NI-780S package uses a flanged, ceramic, bolt-down body that screws directly to the heatsink flange, providing the low thermal resistance required for continuous 100 W operation. The device is broadband-matched over the full 1.93-1.99 GHz band so a single part covers the entire UMTS downlink. The internal LDMOS die uses NXP's HV5 enhancement-mode architecture: a p-type channel with an n- epitaxial drift layer provides high breakdown voltage together with low on-resistance, which translates into high drain efficiency (typically 28-32 percent for Class-AB W-CDMA) and excellent thermal stability. Integrated gate-source clamping diodes protect against ESD and inadvertent negative drive, while internal matching networks at the input simplify board-level design. Typical applications include W-CDMA/UMTS base-station power amplifiers (PAs), TD-SCDMA repeaters, GSM/EDGE upgrade paths, multi-carrier driver stages and 1.9 GHz DECT infrastructure. Designers choose this device when continuous-wave or high-duty-cycle linearity matters more than raw pulse power. Designers should provide a minimum heatsink thermal resistance of about 0.3 C/W at the flange and gate-bias the part in Class-AB around 1.5 V above pinch-off for linear W-CDMA operation. Always follow NXP's reference PCB layout and torque the flange to the recommended 2.5 N*m to keep baseplate < 200 C. This page synthesises distributor pricing, NI-780S-package drop-in alternatives, and practical heatsink/gate-bias notes not found in the bare manufacturer datasheet.
MRF5S19130HR3 - 26W RF Power MOSFET 1.93-1.99GHz NI-880 | NXP
The NXP (formerly Freescale) MRF5S19130HR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for PCN and PCS base station applications from 1930 to 1990 MHz, delivering 26 W average output power with 13 dB typical gain at 28 V in the NI-880H ceramic package. It is intended for 2 x N-CDMA driver or final-stage amplifier service in TDMA, CDMA, and multicarrier base-station power amplifiers, and also covers adjacent 1900-2000 MHz infrastructure bands. What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically designed and characterized for high-frequency, high-power amplification rather than for low-frequency switching. It sits at the top of the discrete-semiconductor hierarchy, above small-signal MOSFETs, and is a member of the broader power-transistor family alongside LDMOS, GaN HEMT, and bipolar RF devices. LDMOS in particular dominates cellular base-station PA output stages because it offers high gain, reasonable efficiency, and mature, low-cost silicon fabrication. Key specifications cited by NXP include: 28 V drain supply, 13 dB typical power gain under 2 x N-CDMA drive, 26 W average output power, and a frequency range of 1930-1990 MHz. The lateral N-channel architecture enables high breakdown and broadband RF performance in a hermetic NI-880H ceramic flange package with a metalized ceramic body that bolts directly to a heatsink. The device is rated for 65 V V(DSS) and is built with internal input matching for ease of amplifier design. The MRF5S19130HR3 uses Freescale's (now NXP) 7th-generation or later lateral N-channel LDMOS process, which combines low on-resistance per unit die area with high gain at 2 GHz and good ruggedness into severe output mismatch. The ceramic NI-880H-2L flange package provides a low-inductance common-drain connection via its mounting surface, which is essential for stable operation above 1.5 GHz. Typical applications include PCN/PCS base-station PAs from 1930-1990 MHz, WLL and MMDS transmitters, 2-carrier N-CDMA driver stages, and multicarrier GSM/EDGE amplifier bricks. Designers also use the part in industrial RF heating and laboratory amplifiers that benefit from its 28 V bias and 26 W power rating. When designing with this device, the heatsink flange must be kept below the maximum junction temperature by ensuring adequate airflow or conduction cooling, and the input circuit must present the impedance required by the datasheet's reference layout. Designers should also gate-bias the part with a regulated negative supply to set the quiescent Idq precisely per the recommended bias table. This page synthesizes distributor pricing, drop-in ceramic-package alternatives, and practical design notes not found in the manufacturer datasheet, sourced directly from NXP's MRF5S19130H datasheet and live distributor inventory.
MRF5S19150HSR5 - 32W RF LDMOS Power Transistor 1.93-1.99GHz | NXP
The NXP MRF5S19150HSR5 is a 32 W RF power LDMOS field-effect transistor designed for the 1.93 GHz to 1.99 GHz band, housed in an NI-880S ceramic package and rated for 65 V operation. It is part of NXP's MRF5S19150 family of laterally diffused metal-oxide semiconductor devices engineered for high-efficiency base-station and repeater amplifier stages. The device delivers 14 dB gain at 28 V test conditions while drawing 1.4 A of quiescent bias current. An RF LDMOS transistor is a specialized power MOSFET architecture optimized for radio-frequency power amplification, in contrast to small-signal MOSFETs used for switching and logic. LDMOS devices use a laterally diffused drift region to achieve high breakdown voltage, high output power density, and excellent thermal performance, making them the dominant technology for cellular base-station power amplifiers (PAs) below 3 GHz. They sit within the broader hierarchy of RF power transistors -> power amplifiers -> RF front-end components -> wireless infrastructure. Key features include 32 W CW output power, 14 dB small-signal gain at 1.93 GHz, and a high ruggedness rating that tolerates severe load mismatches. The internally matched input structure simplifies PCB-level integration by reducing external matching component count, while the NI-880S package provides a flange-mount thermal path that enables direct bonding to a heatsink or cold plate. The transistor operates from a 28 V nominal supply with a 65 V absolute maximum drain voltage. The MRF5S19150HSR5 uses NXP's seventh-generation LDMOS process technology, providing high power density per unit gate periphery. This architecture achieves high drain efficiency (>40% typical) and excellent linearity under both CW and W-CDMA modulation, which is critical for modern wireless standards. Internal matching networks reduce external component count and accelerate time-to-market for amplifier module designs. Typical applications include W-CDMA, LTE, and TD-SCDMA base-station power amplifiers, RF repeaters and boosters, and industrial/scientific RF heating at the 1.93-1.99 GHz band. The part also appears in military and commercial telemetry transmitters and high-power CW oscillator stages within that band. When designing with this device, prioritize the thermal interface: the NI-880S ceramic flange MUST be bolted to a heatsink with appropriate thermal compound, and the drain bias feed should be RF-decoupled close to the package lead. Confirm load mismatch tolerance against your antenna VSWR profile. This page synthesizes distributor pricing, drop-in equivalents, application notes, and design considerations that complement, but do not replace, the manufacturer datasheet.
MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP MRF5S21045NBR1 is an N-channel enhancement-mode lateral RF power MOSFET delivering 10 W average output power across the 2110 to 2170 MHz W-CDMA band. Per the NXP datasheet, it operates from a 28 V test supply, draws 500 mA at test, achieves 14.5 dB power gain, and is housed in a TO-272 WB-4 over-molded plastic package rated to 68 V maximum drain-source voltage. An RF power LDMOS (Laterally Diffused MOSFET) is a specialized power transistor designed for radio-frequency amplification. LDMOS sits within the broader power MOSFET family, optimized for high-frequency, high-efficiency linear amplification where standard vertical MOSFETs lose performance. These devices are widely used in cellular infrastructure, broadcast transmitters, and industrial RF heating because they deliver high gain, good linearity, and ruggedness at modest cost. Key features include 14.5 dB typical power gain at 2.12 GHz, a high drain efficiency suited for W-CDMA signal envelopes, integrated ESD protection, and a thermally enhanced ceramic-style over-molded package. The lateral structure minimizes parasitic capacitances, enabling broadband operation while maintaining stable linearity under multicarrier load conditions. Technically, the MRF5S21045NBR1 uses a laterally diffused drain architecture with an internal input matching network that simplifies external circuitry. Per the NXP datasheet, the device is characterized for W-CDMA base station driver and final stages, supports TDMA, CDMA, and multicarrier amplifier applications, and is optimized for Class AB operation in PCN-PCS/cellular radio and wireless local loop (WLL) applications. Typical applications include W-CDMA base station power amplifiers (PA), PCN/PCS cellular infrastructure driver stages, wireless local loop (WLL) transceivers, and multicarrier power amplifier modules used in 3G/4G macrocell radios operating in the 2110-2170 MHz band. When designing with this part, ensure the heatsink thermal resistance keeps the junction below the rated maximum under worst-case multicarrier W-CDMA load. Source matching should follow the evaluation board layout precisely, as the TO-272 WB-4 package is footprint-dependent for stable RF performance. This page synthesizes distributor pricing, drop-in NXP alternates in the same TO-272 WB-4 footprint, and practical heatsink and bias-tee design notes not consolidated in the manufacturer datasheet.
MRF5S21090HR5 - 19W LDMOS RF Power Transistor, 2.11GHz | NXP
The NXP MRF5S21090HR5 is an N-channel enhancement-mode laterally-diffused metal-oxide-semiconductor (LDMOS) RF power transistor designed for high-peak and average-power amplifier stages in 2.11 GHz wireless infrastructure. The device is rated for 28 V operation, delivers 19 W of output power with 14.5 dB gain at 2.11 GHz, and is housed in the NI-780H-2L ceramic package (SOT-957A) with an integrated mounting flange. An LDMOS RF power transistor is a specialized power MOSFET structure optimized for RF amplification rather than switching. The lateral drain structure and thick gate oxide give LDMOS high breakdown voltage, high gain at RF frequencies, and excellent thermal stability, which is why LDMOS dominates the base-station RF power amplifier (PA) market from 1 GHz to 4 GHz. Within the hierarchy, MRF5S21090HR5 belongs to RF power transistor -> RF MOSFET -> discrete semiconductor -> power amplifier building block. Key differentiating features include 14.5 dB small-signal gain at 2.11 GHz under NXP-specified test conditions, a 28 V typical drain bias aligned with standard wireless base-station rails, and the NI-780H-2L flange-mount ceramic package that provides low thermal resistance to the system heatsink. The device is part of NXP's HV5 LDMOS family, which is widely deployed in W-CDMA, LTE, and WiMAX pico-cell and micro-cell PAs where linearity and ruggedness are required. The high drain-to-source breakdown and built-in drain ESD protection support robust Class AB operation. Typical applications include 2.1 GHz UMTS/W-CDMA and LTE small-cell base-station power amplifiers, 2.11 GHz industrial-scientific-medical (ISM) band amplifiers, driver stages for higher-power macro-cell PAs, and avionics/aerospace telemetry links operating near 2.1 GHz. The 19 W P1dB-class output makes it suitable for final-stage or driver use in pico-cell transmitters. When designing with this part, engineers should observe the drain bias sequencing rules of LDMOS (apply gate voltage before drain voltage to avoid parametric drift), maintain the heatsink flatness and torque specified by NXP, and ensure the input/output matching networks target 50 ohms at 2.11 GHz. The flange-mount package requires screw-down mounting with proper thermal interface material for rated power dissipation. This page consolidates NXP datasheet specifications, distributor pricing, drop-in same-package alternatives, and PCB-level design considerations not found in the standalone datasheet.
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
The NXP MRF5S21100HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station applications in the 2110 MHz to 2170 MHz band, delivering 23 W average output power at 28 V in a NI-780S ceramic package. It operates as a 2-carrier W-CDMA device with 13.5 dB power gain at 2.16 GHz and is internally matched for ease of use, qualifying it for Class AB amplifier service in cellular infrastructure. An RF power MOSFET is a specialized transistor optimized for high-frequency, high-power amplification. Within the broader power semiconductor hierarchy, lateral DMOS (LDMOS) RF MOSFETs sit alongside vertical DMOS, GaN HEMT, and SiC devices as the dominant technology for sub-6 GHz base-station power amplifiers. NXP's fifth-generation MRF5S family targets cellular base-station final stages where linearity, efficiency, and ruggedness outweigh the raw power density of GaN. Compared to bipolar transistors of the same era, lateral MOSFETs offer higher gain-bandwidth product, simpler biasing, and better thermal stability under back-off operation. Key features of the MRF5S21100HSR3 include a maximum drain-source voltage rating of 65 V, characterized series-equivalent large-signal impedance parameters, integrated ESD protection, qualified operation up to 32 V VDD, and a lower thermal resistance NI-780S package with 40 microinches of gold plating. The integrated matching network eliminates the need for external input/output matching on the reference design, accelerating prototyping for W-CDMA, TDMA, CDMA, and multicarrier amplifier applications. Internally the die uses NXP's high-volume 0.4 micrometer LDMOS process on a ceramic-flanged carrier that bolts directly to the system heatsink. The H suffix denotes the lower thermal resistance package versus the L (standard thermal resistance) variant. At 1.05 A quiescent and 23 W Pout with a 28 V rail, typical power-added efficiency is in the high-twenties percent, and the device is rated for the demanding two-carrier W-CDMA linearity mask. Typical applications include W-CDMA base-station final-stage power amplifiers, PCN/PCS/cellular radio Class AB amplifiers, multicarrier driver or output stages, and WLL (wireless local loop) infrastructure. The 2110-2170 MHz band aligns with UMTS Band I, AWS-1 uplink, and several global FDD-LTE allocations, making the part broadly useful across 3G/4G macro-cell designs. When designing with this device, observe the 32 V maximum VDD rating and provide adequate bolt-down torque and thermal interface material to keep the flange below 200 C. The integrated matching simplifies the schematic but does not eliminate the need for a well-designed PCB-to-flange transition, harmonic filtering, and an isolator for VSWR protection. This page synthesizes distributor pricing, drop-in same-package alternatives, and applied design guidance that goes beyond the manufacturer datasheet to support sourcing, replacement, and design-in decisions for cellular RF power stages.
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
The NXP Semiconductors MRF5S21100HSR5 is an N-channel RF power MOSFET designed for high-frequency amplifier applications in the 2.16 GHz to 2.17 GHz band, delivering 23 W of output power in the NI-780S ceramic package. Operating from a 28 V supply rail, the device is characterized for use in class AB and class C amplifier topologies typical of commercial wireless infrastructure, industrial RF heating, and avionics transponder stages. The part is rated for 1.05 A DC drain current at a 65 V drain-to-source rating and offers 13.5 dB of typical power gain at the rated operating frequency. An RF power MOSFET is a specialized lateral or vertical power field-effect transistor optimized to deliver useful gain and efficiency at radio frequencies above 100 MHz, as opposed to a switching-mode power MOSFET which targets low-frequency power conversion. RF power MOSFETs sit inside the larger hierarchy of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor -> semiconductor) and represent the workhorse device for solid-state RF power generation in the 1 MHz to 3 GHz range, replacing older bipolar power transistors in many applications because of their higher input impedance and easier broadband matching. Key features of the MRF5S21100HSR5 include 23 W CW output power capability, 13.5 dB typical gain at 2.17 GHz from a 28 V supply, a 65 V absolute maximum drain-to-source voltage, integrated ESD protection structure, and a thermally enhanced NI-780S ceramic package with a low thermal-resistance path designed for bolt-down flange mounting to an external heatsink. The device is fabricated on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology which has become the de-facto standard for sub-3 GHz RF power amplification. Typical applications include UMTS and LTE base-station driver stages in the 2.1 GHz downlink band, RFID and industrial-scientific-medical (ISM) band power amplifiers at 2.17 GHz, military and avionics RF links, and pulsed-radar driver amplifiers. The high gain at this frequency allows a single device to deliver the rated 23 W output with relatively low input drive, simplifying the preceding driver chain. When designing with this device, allocate a substantial copper or aluminum heatsink with the lowest practical thermal resistance; the NI-780S package is specifically intended for bolt-down flange mounting rather than PCB-only thermal dissipation. Match the input and output networks to 50 ohms for test, and follow the NXP application-note bias sequencing to prevent thermal runaway during turn-on.
MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP
The NXP MRF5S21130HSR5 is a 28 W RF power field-effect transistor built on N-channel enhancement-mode Lateral MOSFET (LDMOS) silicon, housed in the NI-880S ceramic package and tape-and-reel qualified to 500-piece reels. It is designed for W-CDMA base station final-stage power amplifiers covering the 2110 MHz to 2170 MHz band, with 13.5 dB typical power gain and rated for 28 V typical operation at a 1.2 A quiescent bias point delivering 28 W CW output. As part of NXP's RF MOSFET Line targeting cellular infrastructure, this part supports TDMA, CDMA, and multi-carrier amplifier (MCPA) applications where linearity and ruggedness are mandatory. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant RF power transistor technology for wireless infrastructure base stations. LDMOS devices combine high RF output power, high breakdown voltage, excellent thermal stability, and superior gain at UHF/microwave frequencies compared to earlier bipolar or GaAs alternatives. Within the amplifier hierarchy, LDMOS transistors sit downstream from the modulator/driver and upstream of the output band-pass filter and antenna combiner; their high drain efficiency directly determines the base station's OPEX and thermal design budget. The MRF5S21130HSR5 delivers 13.5 dB typical gain at 2.14 GHz, 28 V VDD, and 1.2 A bias, with 28 W P1dB-class CW output designed for Doherty and push-pull final stages. The device features a gold metallization system for reliability under high thermal cycling, an integrated ESD protection network, and an industry-standard gate bias arrangement compatible with automatic bias controllers. Compared to legacy bipolar parts, the LDMOS die offers higher gain-bandwidth product and reduced memory effects, simplifying DPD (digital pre-distortion) correction in modern linearized transmitters. NXP recommends 28 V operating drain bias to leverage the simultaneous optimum efficiency and gain point; lowering VDD reduces Pout and gain, while raising it risks SOA violation under VSWR mismatch. The part is characterized for W-CDMA, TD-SCDMA, and multi-carrier GSM/EDGE drive signals. Reference designs include symmetrical Doherty PA layouts at 2.14 GHz targeting >40% drain efficiency at 8 dB PAR. Typical applications are W-CDMA / LTE base station final-stage PAs operating in the 2110-2170 MHz downlink band, driver stages for higher-power Doherty amplifiers, and multi-carrier power amplifiers (MCPAs) for sectorized cellular sites. The 13.5 dB gain and 28 W Pout profile suit macro-cell base stations and small-cell remote radio heads requiring surface-mountable ceramic packaging. When designing with this part, follow NXP's recommended gate bias sequencing and use adequate baseplate or PCB copper thermal management; the NI-880S package requires a matched impedance microstrip launch on the drain, gate, and RF output pads. Designers should consult the supplied MRF5S21130 reference design for the bias-T, decoupling, and harmonic filter topology. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone datasheet, helping engineers select, source, and qualify the MRF5S21130HSR5 faster.
MRF5S21150HR3 - 33W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF5S21150HR3 is a 33 W average output power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 2110-2170 MHz W-CDMA base-station transmitter power amplifiers, housed in the NI-880 ceramic package (CASE 465B-03, STYLE 1). An RF power transistor is a discrete semiconductor that converts DC power into RF output at microwave or UHF frequencies; the LDMOS family in particular is widely used in cellular infrastructure because of its high gain, high efficiency, and excellent thermal stability. Within the power-management hierarchy the MRF5S21150H sits in the RF Power MOSFET sub-category, and from a system standpoint it is the final amplification stage between the driver amplifier and the antenna-combiner network of a multi-carrier W-CDMA radio unit. Key features include 33 W average output power at 2.17 GHz, 12.5 dB power gain in the W-CDMA band, a 28 V typical drain supply, 1.3 A typical quiescent bias current, and 65 V drain-source breakdown rating per the manufacturer datasheet. The NI-880 ceramic flange package provides a low thermal-resistance path, which is essential for dissipating several hundred watts of waste heat in continuous base-station duty. Architecturally the device is a laterally diffused MOS transistor with two bonding options - the HR3 suffix denotes the standard flange-mount orientation; the HSR3 variant (same datasheet) is the symmetrical bolt-down mirror. The same NXP die is reused across the MRF5S21150 family, sharing the 65 V breakdown and the 12.5 dB W-CDMA gain figure. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, multi-carrier TDMA and CDMA driver stages, PCN/PCS cellular infrastructure, and broadband wireless local-loop front-ends. Class-AB biasing is recommended for linear W-CDMA modulation while preserving efficiency. When laying out a pallet with the MRF5S21150HR3, the input matching network must present the correct load impedance at 2.11-2.17 GHz; mismatch can degrade both gain and ruggedness into a 10:1 VSWR. Adequate base-plate cooling is mandatory because pulsed RF power exceeds the 33 W average figure by 6-9 dB. This page synthesizes distributor pricing, drop-in NI-880 alternatives, and practical thermal/RF design notes not found in a single manufacturer datasheet - it is intended for base-station PA design engineers and procurement specialists.
MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP
The NXP MRF5S4140HR3 is an N-channel enhancement-mode RF power LDMOS transistor designed for 465 MHz single-N-CDMA base-station applications, delivering 28 W average output power at 28 V in a NI-780H-2L flange-mount ceramic package. The device covers the 400-500 MHz UHF band and provides 21 dB gain at 465 MHz, with a 1.25 A typical DC bias current and 65 V drain-source rating suitable for 28 V supply rails. The lateral MOSFET architecture and broadband matching network make the part well-suited for large-signal, common-source amplifier designs in industrial and commercial RF infrastructure. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET optimized for high-frequency, high-power amplification. It is a subset of the broader discrete power MOSFET family and is widely used as the final-stage or driver amplifier in wireless base stations, broadcast transmitters, and industrial RF generators. LDMOS devices combine the high breakdown voltage and thermal robustness of bipolar transistors with the switching simplicity of MOSFETs, and they dominate cellular and UHF base-station amplifier stages because of their high gain, high efficiency, and broadband RF characteristics. The MRF5S4140HR3 key parameters include 28 W typical output power, 21 dB power gain, 28 V typical operating drain voltage, 65 V maximum drain-source rating, and operation across 400-500 MHz. The lateral structure provides excellent thermal stability and broadband input/output matching, while the NI-780H ceramic flange package offers low thermal resistance and straightforward bolt-down heatsinking for high-duty-cycle base-station operation. Internal electrostatic discharge (ESD) protection and stable gain across frequency simplify board-level design. Architecturally, the MRF5S4140HR3 uses a laterally diffused MOS channel with a heavily doped drain region for high breakdown voltage and low on-resistance. The internal matching networks are pre-tuned for the 400-500 MHz band, and the device exhibits high power-added efficiency when operated in Class AB bias. Designers should observe the manufacturer-recommended bias sequence (gate-before-drain) and use gate-source pull-down resistors for safe shutdown. Typical applications include 450 MHz CDMA, TDMA, and LTE private-network base-station amplifiers, UHF broadcast transmitters, industrial RF heating, and amateur radio amplifiers. The 28 W average power level is well matched to single-sector or repeater-station PA designs. When designing with this part, provide a low-inductance ground path through the flange mounting surface and adequate copper heat-spreading beneath the PCB. Operate within the device's safe operating area envelope and follow the manufacturer bias and sequencing guidelines to prevent in-rush currents that could damage the gate oxide. This page synthesizes distributor availability, drop-in alternatives in the same NI-780 family, and practical design notes that are not consolidated on the manufacturer datasheet alone.
MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP
The NXP MRF5S4140HR5 is an N-channel enhancement-mode lateral RF power MOSFET designed for high-frequency, large-signal common-source amplifier applications from 400 MHz to 500 MHz. It delivers 28 W of continuous output power at 28 V supply, with a typical power gain of 21 dB at 465 MHz and a drain efficiency tuned for class-AB operation. The device is housed in the NI-780H-2L (2-lead ceramic flange) package, the de facto industry standard for base-station RF power transistors. A power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically engineered to handle high current and high voltage in switching or RF amplification roles. Within the taxonomy, the MRF5S4140HR5 sits under RF power MOSFET -> power MOSFET -> discrete semiconductor. RF power MOSFETs are optimized for low parasitic capacitance and high transition frequency (fT), enabling efficient amplification at VHF/UHF frequencies where conventional low-frequency MOSFETs suffer severe gain roll-off. Key specifications include a 65 V drain-source breakdown voltage (V(BR)DSS), a 1.25 A maximum DC drain current, and a 28 V typical operating drain supply. The high gain (21 dB at 465 MHz) reduces the required driver stages in a typical transmit chain, while the broadband input matching capability covers the entire 400-500 MHz commercial and industrial band. Integrated ESD protection and a thermally enhanced ceramic flange package support reliable operation in base-station equipment. Architecturally, the device uses NXP's laterally diffused MOS (LDMOS) process technology, which is the dominant RF power transistor technology for sub-6 GHz applications due to its high gain, high breakdown voltage, and excellent thermal conductivity on a ceramic flange. The device is characterized for class-AB operation with appropriate matching networks. Typical applications include UHF base-station power amplifiers operating in the 400-500 MHz commercial and industrial frequency band, land mobile radio repeaters, public-safety transmitters, and broadband industrial RF generators. Designers should bias the gate between 2.5 V and 4.0 V for class-AB operation and use an RF-grade heat sink bolted to the ceramic flange for sustained thermal management.