Semi-conducteurs discrets
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Produits (1814)
MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP
The NXP MRF7S19100NBR1 is a 29 W average single-W-CDMA lateral N-channel RF power MOSFET designed for the 1930-1990 MHz band, supplied in a TO-270 WB-4 (TO-272 WB-4) plastic over-molded package. Per the NXP datasheet, it operates from a 28 V rail, delivers 17.5 dB typical power gain at 1.96 GHz, and is specified for 1.93 GHz to 1.99 GHz cellular base-station amplification. What is an RF power MOSFET? It is a lateral double-diffused (LDMOS) or laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. RF power MOSFETs sit at the output stage of transmitter lineups and belong to the broader hierarchy of RF power transistors > power semiconductor > discrete semiconductor. Compared with bipolar RF power transistors, lateral RF MOSFETs offer higher gain, simpler biasing (gate voltage only), and better thermal stability, which is why they dominate modern cellular base-station final-stage designs. Key features include 65 V minimum drain-source breakdown voltage, a 28 V nominal operating supply, 17.5 dB typical power gain, and 29 W average output power in single-W-CDMA with 3GPP Test Model 1, 64 DPCH, 50% clipping at PAR 7.5 dB. The TO-270 WB-4 package provides a low-inductance ceramic-free over-molded lead frame with a copper ground flange, supporting stable RF performance and simplified surface-mount or through-hole PCB mounting. Architecturally, the device is a single N-channel enhancement-mode lateral MOSFET pair internally matched for the 1.93-1.99 GHz W-CDMA downlink band. The datasheet specifies quiescent drain current IDQ = 1000 mA and a guaranteed gain/efficiency combination that meets 3GPP spectral-emission requirements without external predistortion, making it a workhorse driver or final-stage part for W-CDMA picocell, microcell, and femtocell base stations as well as repeater infrastructure. Typical applications include W-CDMA/LTE base-station final-stage amplifiers in the 1.93-1.99 GHz downlink band, RF driver stages for higher-power Doherty amplifiers, and cellular repeater/booster power modules. The wide-band gain profile also supports multi-carrier GSM and TD-SCDMA reuse in legacy networks migrating toward LTE. When designing with this part, observe the VDD = 28 V / IDQ = 1000 mA reference bias, ensure the drain load-line stays inside the published SOA at full output power, and follow the manufacturer-recommended evaluation PCB layout (controlled-impedance microstrip, low-thermal-resistance mounting to the heatsink with proper torque, and minimal lead length) to realize the datasheet gain and efficiency. Compared with a higher-frequency GaN alternative, this NXP LDMOS part offers comparable gain at the W-CDMA band at lower cost but at reduced bandwidth and lower peak efficiency at very wide instantaneous bandwidths. This page synthesizes NXP official datasheet parameters, current distributor stock and pricing, verified drop-in same-package alternatives, and practical design notes not available on a single distributor listing.
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF7S19100NR1 is a lateral N-channel enhancement-mode RF power MOSFET designed for CDMA base station applications from 1930 to 1990 MHz, delivering 29 W average output power at 28 V in a TO-270 WB-4 (Case 1486-03) overmolded plastic package. The device is a single-stage RF power LDMOS transistor rated at 28 V VDD with 17.5 dB gain and 1.93 GHz to 1.99 GHz frequency coverage, optimized for single-carrier W-CDMA modulation with 3GPP Test Model 1, 64 DPCH at 50% clipping. An RF power MOSFET (LDMOS) is a specialized lateral double-diffused metal-oxide-semiconductor field-effect transistor engineered for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. Unlike small-signal MOSFETs, RF LDMOS devices feature a drift region that supports high breakdown voltage while maintaining excellent RF gain, making them the dominant transistor technology in cellular base-station power amplifiers. MRF7S19100NR1 sits in the broader hierarchy: RF power transistor -> RF MOSFET -> LDMOS -> discrete semiconductor -> electronic component. Key features include 17.5 dB small-signal gain at 1.96 GHz, 29 W average Pout with 7.5 dB PAR W-CDMA input signal, 28 V typical drain supply, 65 V minimum drain-source breakdown voltage, and integrated electrostatic discharge protection. The device supports Class AB and Class C bias modes and is designed for multi-carrier amplifier (MCPA) applications where linearity and efficiency are both critical. The MRF7S19100NR1 architecture uses NXP's seventh-generation (Gen7) LDMOS process, which provides improved thermal resistance (theta_JC below 0.4 C/W) and high power density. The overmolded plastic TO-270 WB-4 package with ceramic window minimizes parasitic losses at 2 GHz while providing a robust surface-mountable footprint suitable for automated assembly. Typical applications include W-CDMA and CDMA2000 base-station power amplifiers, multi-carrier cellular repeaters, and 1.9 GHz PCS/DCS-1900 band linear amplifiers. The 1930-1990 MHz coverage targets the North American PCS uplink/downlink bands. When designing with this part, maintain 50 ohm microstrip transmission lines at the RF input and output leads, place the device on a thermal-via array for the source tabs, and ensure the bias sequencing circuit prevents VGS from being applied before VDD to avoid device damage. This page synthesizes NXP datasheet specifications, current distributor pricing, drop-in alternative candidates, and practical RF design guidance not consolidated in any single manufacturer document.
MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP
The NXP MRF7S19120NR1 is a single W-CDMA lateral N-channel RF power MOSFET designed for CDMA base station applications across the 1930 MHz to 1990 MHz band, delivering 36 W average output power at 28 V supply in a TO-270 WB-4 overmolded plastic package. Headline specifications include 28 V drain bias, 1.2 A typical quiescent current, 18 dB small-signal gain at 1.99 GHz, and 65 V drain-source breakdown rating per the Freescale/NXP datasheet family. The part is a member of NXP's seventh-generation (Gen7) high-voltage LDMOS RF power transistor portfolio. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized MOSFET optimized for high-frequency, high-power amplification. The lateral structure places source, gate, and drain on the same surface, enabling low parasitic capacitance and high gain at UHF/microwave frequencies. Within the RF power device hierarchy, LDMOS sits alongside GaAs HEMT, GaN HEMT, and Si bipolar; LDMOS dominates sub-3 GHz base-station transmitter final stages because of its high breakdown voltage, high efficiency when driven in Class AB, and lower cost-per-watt than GaN at these frequencies. The MRF7S19120NR1 specifically targets W-CDMA, LTE-FDD Band 2/PCS, and similar 3GPP air interfaces that share the 1930-1990 MHz downlink allocation. Key electrical features include 18 dB typical power gain at 1.99 GHz, 36 W average CW output power under W-CDMA modulation, 65 V minimum drain-source breakdown, and Class AB / Class C operating compatibility. The device is built on NXP's Gen7 HV8 LDMOS process, which combines high breakdown with reduced internal capacitances to maximize both gain and efficiency in Doherty and standard push-pull final-stage architectures used in macro-cell base stations. Internally, the MRF7S19120NR1 integrates a single N-channel enhancement-mode lateral MOSFET die mounted on a ceramic / copper flange and overmolded in the TO-270 WB-4 footprint. Internal input and output matching networks are pre-tuned to the 1930-1990 MHz band, so external matching is limited to fine-tuning elements. The drain is connected through the package flange for low thermal impedance and direct PCB-to-heatsink mounting. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE-FDD Band 2/PCS final stages, multi-carrier GSM/EDGE combiner amplifiers, and industrial RF heating. Designers favor this part for its high power density, repeatable performance across production lots, and drop-in compatibility with NXP's broader MRF7S family reference designs. When designing with this device, ensure the heatsink/PCB thermal path maintains the flange temperature within the datasheet maximum; at 36 W average and roughly 50% efficiency, expect continuous dissipation on the order of 30-40 W requiring a substantial thermal mass. Always sequence gate bias before drain bias to prevent uncontrolled turn-on. This page consolidates verified distributor pricing, drop-in NXP same-family alternatives, RF base-station application guidance, and packaging information beyond the bare manufacturer datasheet.
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
The NXP MRF7S19170HSR3 is a 50 W average, 28 V single W-CDMA lateral N-channel enhancement-mode RF power MOSFET (LDMOS) designed for 1930-1990 MHz CDMA base station applications, housed in the NI-880S ceramic bolt-down package. It delivers 17.2 dB gain at 1.99 GHz under 28 V / 1.4 A bias and uses a 65 V rated drain-source breakdown optimized for 28 V cellular infrastructure rails. The device is the second-source 'HS' variant with a bolt-down flange for grounded-fixture assembly, suitable for Class AB and Class C amplifier topologies across all standard cellular base station modulation formats. An RF power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-power, high-frequency amplification in the 0.5-3 GHz range. Within the broader RF semiconductor hierarchy, it sits between small-signal RF MOSFETs and traveling-wave tube or GaN power amplifiers, providing the dominant cellular base station transistor technology through the 4G LTE era. LDMOS parts like the MRF7S19170HSR3 are favored over bipolar transistors for their high gain, single-polarity biasing, and inherent ruggedness into high VSWR loads. Key features include 17.2 dB typical power gain, 50 W average output power (peak envelope power > 200 W typical for W-CDMA), 65 V drain-source breakdown rating, integrated ESD protection, and an internally matched input that simplifies PCB-level matching networks. The NI-880S package provides a low thermal-resistance path to the system heatsink, critical for continuous-wave base station duty cycles where junction-to-case temperature drives long-term reliability. The MRF7S19170HSR3 uses NXP's HV7 LDMOS process, which places source, body, and drain laterally on the silicon die. This layout minimizes parasitic capacitance, raises breakdown voltage, and supports the high peak-to-average ratios required by multicarrier W-CDMA signals. The die is then packaged in a metal-ceramic NI-880S flange for direct mounting to a copper or aluminum spreader. Typical applications include CDMA2000, W-CDMA, and multi-carrier GSM edge base station power amplifiers, Doherty final-stage driver positions, and broadband 1.9 GHz industrial/scientific RF amplifiers. The 1.93-1.99 GHz band covers US PCS and most global UMTS band allocations, making this part a workhorse for legacy 3G infrastructure retrofits and replacements. When designing with this part, pay careful attention to lead-free solder reflow profiles (the device's Ni-Au lead finish demands a controlled peak temperature around 250-260 C), provide adequate via fencing around the RF input/output traces, and ensure the bolt-down flange is torqued to the heatsink spec so thermal resistance remains within the datasheet maximum. This page synthesizes NXP distributor stock, parametric-equivalent RF LDMOS candidates, and practical Doherty PA design notes not consolidated in the original Freescale/NXP datasheet alone.
MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP
The NXP MRF7S21080HR3 is an RF power field-effect transistor (LDMOS, N-channel enhancement-mode) delivering 22 W average output power across the 2110-2170 MHz band from a 28 V supply, housed in the NI-780S-4S2S ceramic package. It is designed specifically for CDMA, W-CDMA, and multicarrier amplifier applications in base-station infrastructure, providing 18 dB power gain at 800 mA quiescent current. An LDMOS (Laterally Diffused MOSFET) transistor is a type of power MOSFET optimized for RF amplification in the UHF to 3 GHz range. RF power transistors sit in the hierarchy: RF power transistor -> RF power amplifier -> wireless infrastructure component -> discrete semiconductor. Compared to earlier bipolar RF power devices, LDMOS offers higher gain, better thermal stability, and superior ruggedness into load mismatches. The lateral structure gives low feedback capacitance, enabling broadband operation and stable performance across production variation. Key features of the MRF7S21080HR3 include typical drain efficiency of 32% at 22 W average W-CDMA output, ACPR of -38 dBc at 5 MHz offset, and integrated ESD protection. The device operates from a single 28 V rail and supports both Class AB and Class C bias topologies. Lateral MOSFET construction provides inherent thermal stability and gain linearity, allowing designers to push output power or back off for line-of-sight multicarrier linearity without device failure. In a typical base-station PA, the MRF7S21080HR3 is the final stage in a Doherty or class-AB lineup, preceded by driver-stage MRF7S21080HSR3 or smaller NXP RF MOSFETs. The ceramic NI-780 package provides low thermal resistance to the system heatsink, with the source leads grounded directly through the flange. Designers apply gate bias with a negative supply and sequence VDD and VGG to prevent partial turn-on that would damage the device. Designed for cellular-infrastructure PAs covering 2110-2170 MHz (UMTS Band 1, AWS, LTE band), the MRF7S21080HR3 also supports TD-SCDMA and PCN/PCS applications. Its broadband response allows one part to cover multi-band radios when paired with appropriate matching networks, reducing SKU count in production. Choose this part when a robust 28 V, ~22 W LDMOS with proven production pedigree is needed for urban-macro or outdoor small-cell base-station RF chains. When evaluating thermal design, ensure the heatsink keeps the case below the maximum rated junction temperature during continuous W-CDMA operation; modest de-rating (output back-off of 1-2 dB) preserves long-term reliability. Designers should also provide adequate input-side harmonic terminations to meet 3GPP spectral-emission masks in production units.
MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP
The NXP MRF7S21080HSR3 is a single W-CDMA lateral N-channel RF power MOSFET designed for 2110-2170 MHz base station applications, delivering 22 W average output power at 28 V with 18 dB power gain and 32% drain efficiency in an NI-780S (NI-780HS) ceramic-metal sealed surface-mount package. An RF power MOSFET is a specialized lateral N-channel enhancement-mode transistor optimized for high-frequency, high-power amplification where conventional signal MOSFETs cannot deliver the required RF efficiency and ruggedness. In the hierarchy of power semiconductors, RF power MOSFETs sit below general-purpose power MOSFETs but above small-signal FETs, and they form the final amplification stage in cellular base station transmitter chains where linearity and efficiency are critical. Lateral geometry places source, gate, and drain on the same surface, enabling lower parasitic capacitance and higher gain at RF frequencies than vertical DMOS structures. Key performance parameters include an operating frequency range of 2110-2170 MHz (UMTS Band 1 / AWS downlink), a P1dB-class pulsed output capability substantially higher than the 22 W average rating, and integrated ESD protection. The device uses a single-carrier W-CDMA reference waveform with 3.84 MHz channel bandwidth and 7.5 dB peak-to-average ratio. ACPR performance of -38 dBc at 5 MHz offset makes the part suitable for 3GPP spectral mask compliance without extensive digital predistortion. The MRF7S21080HSR3 uses a ceramic-metal sealed cofired (NI-780S/NI-780HS) Air Cavity Package designed for low thermal resistance and high reliability in base station environments. The lateral MOSFET die is matched to 50 ohms at the input and incorporates internal input matching networks that simplify external PCB design. Operating from a 28 V VDD rail with IDQ = 800 mA quiescent bias, the device achieves 32% drain efficiency at 22 W average output, balancing thermal dissipation against linearity. The die is rated for 65 V drain-to-source breakdown. Typical applications include W-CDMA, LTE, and multi-mode cellular base station power amplifiers, repeaters, and micro-cell transmitters operating in the 2110-2170 MHz UMTS Band 1 / AWS downlink spectrum. The device is also used in military and aerospace RF communication links requiring 2.1 GHz high-linearity amplification. Designers should ensure the gate bias network provides a stable -2 to -3 V pinch-off voltage with sequenced VDD turn-on to prevent parametric oscillation. Source leads must be grounded directly beneath the package flange using multiple vias to minimize common-source inductance, which would otherwise degrade gain and efficiency at the top end of the operating band. This page consolidates distributor pricing, parametric cross-reference data, and application engineering guidance not aggregated on the manufacturer datasheet.
MRF7S21110HR3 - 33W RF Power LDMOS 2.11-2.17 GHz | NXP
The NXP MRF7S21110HR3 is a 33 W average (Pout) RF power LDMOS field-effect transistor designed for single-carrier W-CDMA base-station amplifiers operating in the 2110-2170 MHz band, supplied in the NI-780H-2L (NI-780) ceramic-flange package. It operates from a 28 V VDD rail with a quiescent current of 1100 mA, delivers 17.3 dB power gain at 2167.5 MHz, and achieves 32.5% drain efficiency under W-CDMA IQ-magnitude-clipping drive (PAR 7.5 dB @ 0.01% CCDF). An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a power MOSFET variant engineered for high-power RF amplification. It occupies the role RF power transistor -> LDMOS FET -> discrete power semiconductor -> active RF component within a base-station transmit chain. Compared to bipolar RF power devices, LDMOS offers higher gain, simpler biasing, and better ruggedness into mismatched loads, which is why it dominates cellular macro-cell PA design from 700 MHz through 2.7 GHz. Key features of the MRF7S21110HR3 include a 65 V drain-source rating, integrated ESD protection, ease of power scaling through parallel device operation, and optimized thermal performance via the NI-780 ceramic flange. The device also supports multicarrier drive and Doherty PA topologies, and is rated for use in Class AB and Class C amplifier modes with integrated temperature-compensated bias network options on the matching circuit board. Architecturally, the MRF7S21110HR3 is an N-channel enhancement-mode lateral MOSFET built on NXP's HV7 LDMOS process, which provides the breakdown voltage headroom needed for 28 V operation while maintaining the high fT required at 2.17 GHz. The ceramic NI-780H-2L package has a low thermal resistance that supports continuous-wave operation at full rated output when properly heatsunk to the chassis. Typical applications include W-CDMA, CDMA, and LTE-FDD macro-cell base-station power amplifiers, multicarrier driver stages, and Doherty final-stage pairs in the 2.11-2.17 GHz downlink band. The 33 W average power capability maps directly to a single sector of a 3-sector macro-cell PA at 2x MIMO configuration. When designing with the MRF7S21110HR3, ensure the drain voltage stays within the 28 V +/- 0.5 V target window to preserve linearity, and provide a minimum 50 W copper-spread heatsink to maintain junction temperature below 200 C at full duty cycle. This page synthesizes current distributor stock, pricing tiers, drop-in same-package alternatives, and application circuit guidance drawn from the NXP datasheet and reference designs - information gain not found on a single distributor listing.
MRF7S21110HR5 - 33W, 2.17GHz RF Power LDMOS Transistor | NXP
The NXP MRF7S21110HR5 is a 33 W, 28 V RF power LDMOS transistor designed for base-station and commercial wireless infrastructure applications in the 2110 MHz to 2170 MHz band, packaged in the NI-780 ceramic carrier (also referenced in distributor listings as the NI-780 ceramic package). It is specified at 2.17 GHz with 17.3 dB power gain, 33 W P1dB-class output power, and is characterized under a 28 V DC supply and CW operation. The device is part of NXP's MRF7S family of high-frequency LDMOS power FETs optimized for W-CDMA, LTE, and UMTS base-station transmitter final stages. What is an LDMOS RF power transistor? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a power transistor technology built on a silicon die with a lateral drain structure. LDMOS devices dominate the cellular base-station power amplifier (PA) market because they combine high RF power density, high breakdown voltage (typically 65 V on the drain), excellent thermal conductivity, and competitive cost versus GaN or Si bipolar alternatives. LDMOS sits in the RF power semiconductor hierarchy between GaAs HBTs (used at lower power and frequency) and GaN HEMTs (used at higher frequency and power), and remains the workhorse of sub-3 GHz macro-cell transmitter final stages. Key features of the MRF7S21110HR5 include a high breakdown voltage rating of 65 V, internally matched input and output for ease of use, integrated ESD protection, a hermetic NI-780 ceramic package for high-reliability operation, and gold-plated leads for low-resistance interconnect. The LDMOS die provides high gain and efficiency for Class-AB PA designs, supporting digital predistortion (DPD) correction for linearity improvement. The internal matching simplifies board layout by reducing the number of external matching components required at the operating frequency. Technically, the device uses NXP's seventh-generation LDMOS process, which delivers improved thermal performance and ruggedness compared to earlier MRF6/MRF7 generations. The part is specified for 50 ohm operation with the internal matching network, making it a near drop-in final-stage transistor for 2.1 GHz band macro-cell PAs. Designers typically pair it with NXP's driver-stage MRF7S20180 or similar -8 dB gain block, plus a circulator and bandpass filter in the final assembly. Typical applications include W-CDMA, LTE, and UMTS base-station transmitter final stages at 2.11-2.17 GHz, commercial wireless infrastructure, repeaters and small-cell power amplifiers, and industrial/scientific RF power modules. These uses all benefit from the part's high power density and high linearity. When designing with this device, use a gold-tin or gold-germanium die attachment on a copper or molybdenum heatsink with adequate thermal vias; the LDMOS die dissipates significant heat at 33 W output, and junction-to-case thermal management is critical to long-term reliability. Apply proper DC bias sequencing (gate voltage before drain voltage) to prevent parametric drift. This page synthesizes NXP datasheet parameters, distributor pricing context, drop-in family variants and practical thermal bias-design guidance not found in the bare manufacturer datasheet.
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP MRF7S21150HSR3 is a 28 V, 44 W average single W-CDMA lateral N-channel RF power MOSFET designed for the 2110-2170 MHz cellular base-station band, housed in an NI-780S ceramic package. It is the high-source-lead variant of the MRF7S21150 family, optimized for class-AB amplifier operation in CDMA, W-CDMA, and multi-carrier base-station power amplifiers, where it delivers 17.5 dB typical power gain at 2.14 GHz with a 28 V supply. A RF power MOSFET is a laterally-diffused metal-oxide-semiconductor (LDMOS) transistor engineered specifically for high-power RF amplification. Within the broader semiconductor taxonomy it sits as a sub-class of power MOSFET -> discrete MOSFET -> discrete semiconductor, distinguished from low-voltage logic MOSFETs by its high drain breakdown voltage (65 V rated), thick gate oxide, and internal matching network that flattens gain and efficiency across the operating bandwidth. RF LDMOS devices historically dominate macro-cell base-station PAs because of their high ruggedness, ease of paralleling, and low thermal resistance relative to competing GaAs or silicon bipolar technologies. The MRF7S21150HSR3 achieves 44 W average output power (150 W peak) in a pulsed W-CDMA signal envelope while sustaining >15 dB gain across the 2110-2170 MHz band. According to the manufacturer datasheet, the device is rated for 28 V operation with a maximum drain voltage of 65 V, uses enhancement-mode N-channel gate drive (no negative bias required for off-state), and includes integrated electrostatic discharge protection. The part is qualified to JEDEC JESD22 test methods for thermal and mechanical reliability in base-station environments. The MRF7S21150HSR3 is the high-source-lead (HS) tape-and-reel variant with the source tied through the package flange, simplifying board-level grounding and thermal-via layout. Designers typically deploy it in a Doherty final-stage configuration for high-efficiency multi-carrier amplifier (MCPA) blocks feeding 4x4 MIMO antenna arrays in LTE and 5G NR base stations. Test-bench characterization under 3GPP W-CDMA signals shows adjacent-channel leakage ratio (ACLR) performance suitable for direct connection to digital pre-distortion (DPD) linearizers without intermediate filtering. Typical applications include W-CDMA/LTE macro base-station final-stage PA, multi-carrier power amplifiers (MCPA), and driver stages for higher-power LDMOS such as the MRF8P20100. Designers should pair the part with a well-matched 50 Ω input/output network, adequate forced-air cooling, and a sequencing controller that holds the gate below threshold during drain-voltage ramp-up. The NI-780S ceramic package needs a copper flange with low thermal resistance; see the NXP application note for solder-down and via-fence recommendations. This page synthesizes distributor pricing from DigiKey and Mouser (as of 2026-10-16), parametric cross-reference data, and application guidance for the MRF7S21150HSR3, complementing the manufacturer datasheet with selection context, drop-in alternatives, and design notes not present in the original PDF.
MRF7S21170HSR3 - 50W WCDMA RF Power MOSFET, 2110-2170 MHz | NXP
The NXP MRF7S21170HSR3 is a 50 W AVG (peak ~214 W) lateral N-channel enhancement-mode RF power MOSFET designed for single-W-CDMA base-station transmitter final stages covering the 2110–2170 MHz PCS/AWS downlink band. Operating from a 28 V rail, the device is specified for 16 dB typical power gain at 2.17 GHz and is characterized for class-AB multi-carrier W-CDMA drive. The part is housed in the NI-880S ceramic flanged power package (CASE 465B-04) with a copper flange for direct bolted heatsinking and two bolt-down RF leads. What is an RF power MOSFET? An RF power MOSFET (radio-frequency power metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized to amplify high-frequency signals at significant power levels. Unlike small-signal MOSFETs used for switching or low-level logic, RF power MOSFETs feature lateral die layouts, thick metal gate/source overlay structures, and ceramic/air-cavity packages with very low parasitic inductance, allowing them to deliver tens to hundreds of watts into 50-ohm loads at GHz frequencies. They sit at the top of the power transistor hierarchy: power transistor → RF power transistor → RF power MOSFET → lateral N-channel enhancement-mode RF power MOSFET. Key differentiating specifications for the MRF7S21170HSR3 include: 50 W average output power at 28 V, 16 dB typical gain, ~50% W-CDMA drain efficiency at rated Pout, integrated ESD protection, and a thermally robust NI-880S package designed for chassis-mounted or cold-plate cooling. The lateral N-channel structure provides excellent thermal stability and ruggedness into a 5:1 VSWR mismatch, which is critical for cellular base-station reliability under antenna-detuned fault conditions. Architecturally, the MRF7S21170HSR3 is a single-ended lateral MOSFET die that uses NXP's HV7 RF power process. The NI-880S package provides a low-inductance common-source path and integrated pre-matched input/output leadframes. This combination enables designers to build Doherty, push-pull, or single-ended Class AB final stages with minimal external matching complexity at the 2110–2170 MHz band. Typical applications include W-CDMA/HSPA/LTE macro-cell base-station power amplifiers at 2.1 GHz, multi-carrier GSM/EDGE linear amplifiers, PCN/PCS/cellular radio driver stages, and WLL (wireless-local-loop) infrastructure. The part is also widely used as a benchmark driver for later Doherty amplifier designs targeting the same band. When designing with this part, evaluate thermal performance first: at 50 W CW and 50% efficiency, the device dissipates approximately 50 W. The NI-880S flange must be bolted to a heatsink or cold plate with adequate airflow; thermal grease and a torque-specified bolt schedule are mandatory. Bias sequencing and PCB microstrip layout should follow NXP's MRF7S21170H application note to maintain stability across the 2110–2170 MHz passband. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer page, including a side-by-side comparison with the 230 W AFT18S230SR5 and the lower-band MRF7S15100HSR3.
MRF7S21210HR5 - 63W RF Power LDMOS 2.17GHz | NXP Semiconductors
The NXP Semiconductors MRF7S21210HR5 is a 63 W RF power N-channel LDMOS transistor designed for 2.17 GHz applications, featuring 18.5 dB power gain and operating from a 28 V test supply at 1.4 A quiescent bias, housed in an NI-780H-2L ceramic/bolt-down package. The device is part of NXP's seventh-generation MRF7S series, optimized for high-power pulsed and CW RF amplification in the 2110-2170 MHz wireless-infrastructure band. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power transistor that combines high RF output power, high gain, and high efficiency into a single robust die. It belongs to the broader power-MOSFET family and is widely used as the final-stage active device in base-station power amplifiers, where it converts DC supply power into amplified RF energy. The MRF7S21210HR5 specifically targets the 2.1 GHz LTE/UMTS band with ceramic packaging engineered for superior thermal performance under continuous RF drive. Key features include a 65 V drain-source breakdown rating providing wide RF over-voltage margin, an output power of 63 W (CW or pulsed) at 2.17 GHz with 18.5 dB gain, and rugged construction rated for mismatch tolerance. The 28 V typical operating bias matches standard base-station DC infrastructure, and the integrated ESD protection simplifies factory handling. The MRF7S21210HR5 uses NXP's HV7 LDMOS process technology, which delivers high drain efficiency (typically 45-55% in Doherty configurations) by minimizing on-resistance and parasitic capacitances. The die is internally matched for 50 ohm operation at 2.17 GHz, simplifying external matching networks and accelerating time-to-market for amplifier designers targeting the LTE/UMTS downlink spectrum. Typical applications include LTE, WCDMA, and UMTS base-station power amplifiers, repeaters, and small-cell infrastructure; tactical and aerospace RF links operating in the 2.1 GHz band; and laboratory-grade RF power test equipment requiring broadband CW/pulsed amplification. Designers pair this transistor with NXP's driver-stage LDMOS parts and 3G/4G Doherty reference designs. When designing with this device, follow NXP's application-note thermal mounting guidelines - the NI-780H-2L package requires a bolted heatsink with thermal compound and a solid copper-clad PCB or copper-molybdenum carrier to maintain junction temperature below 200 °C. Exceeding the absolute maximum drain voltage (65 V) under load-mismatch conditions will degrade device reliability. This page synthesizes NXP datasheet specifications, distributor pricing tiers, and applied design guidance - engineering context not consolidated on any single distributor page.
MRF7S24250NR3 - 250W RF Power LDMOS Transistor 2.45GHz | NXP
The NXP MRF7S24250NR3 is a 250 W CW RF power LDMOS transistor designed for industrial, scientific, and medical (ISM) applications at 2450 MHz, including industrial heating, microwave ovens, and RF plasma generation. It operates from a 32 V supply rail and is supplied in the OM-780-2 ceramic air-cavity package with input and output matched internally for simplified board integration at the 2.4 GHz ISM band. Key specifications include 250 W typical output power, 14.7 dB small-signal gain, and a 100 mA quiescent bias current at 30 V. The device also features integrated ESD protection, a moisture sensitivity level (MSL) of 3, and a peak reflow rating of 260 C for 40 seconds. The terminal finish is tin (JESD-609 e3), and it is supplied on tape-and-reel for high-volume SMT-compatible handling. From an architecture standpoint, the MRF7S24250NR3 uses NXP's laterally diffused MOS (LDMOS) process, a technology that has displaced older bipolar and GaAs devices in high-power RF applications because it combines high breakdown voltage, high gain, and excellent thermal stability. The OM-780-2 flanged ceramic package provides a low thermal resistance path to the heatsink, which is essential when dissipating more than 250 W of pulsed or continuous RF power in compact amplifier modules. Typical applications include 2.45 GHz industrial microwave generators, RF plasma lighting drivers, ISM-band solid-state cooking appliances, and medical diathermy / hyperthermia equipment. The 2450 MHz operating frequency aligns with the global ISM band allocations, enabling a single design to serve multiple geographies. When designing with this device, attention must be paid to heatsink selection and overall thermal management. Because the LDMOS junction must remain below its maximum rated temperature during continuous-wave (CW) operation, the system heatsink should be sized to keep the flange temperature below the recommended 65 C under worst-case load. This page synthesizes real distributor pricing and availability, drop-in compatible alternatives, and practical design notes not found in the manufacturer datasheet alone.
MRF7S27130HSR3 - 23W 2.7GHz WiMAX RF Power MOSFET | NXP
The NXP Semiconductors MRF7S27130HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for WiMAX base station applications across the 2500–2700 MHz band. Key headline parameters include 23 W average output power at 28 V supply, 16.5 dB power gain, and 130 W peak P1dB capability, all packaged in the NI-780S ceramic-flanged RF transistor case. Per the NXP datasheet, it is part of the MRF7S27130 family and is built on Freescale's HV7 later-generation lateral MOSFET process for high breakdown and broadband RF performance. A radio-frequency power MOSFET (RF MOSFET) is a discrete transistor optimized to deliver measurable radio-frequency output power at high efficiency and gain, sitting in the hierarchy: RF MOSFET -> RF power transistor -> power semiconductor -> discrete semiconductor. Unlike small-signal MOSFETs used for logic-level translation, RF power MOSFETs are characterized for output power (W), gain (dB), drain efficiency (%) and ruggedness under mismatch, and are the building blocks of the final stage in any transmitter line-up. The MRF7S27130HSR3 is specifically engineered for OFDM-based WiMAX signals that demand high peak-to-average ratios and linear amplification. Differentiating specifications include a drain-source breakdown voltage rated above the 28 V operating rail, an integrated ESD protection network, and a ceramic NI-780S package with bolt-down mounting for low thermal resistance to the system heatsink. The HSR3 suffix denotes a tape-and-reel, RoHS-compliant shipping option for high-volume SMT-style assembly onto matched RF carrier plates. According to the NXP datasheet, the device is also internally matched for input, simplifying the bill of materials in the typical 50-ohm reference design. The MRF7S27130HSR3 uses a lateral N-channel DMOS structure on an advanced silicon substrate, with multiple gate fingers distributed across the die to maximize periphery-to-area ratio. This gives the device its high gain and broadband response, while the ceramic NI-780S case provides low parasitic lead inductance essential for stable operation above 2.5 GHz. Internal matching networks reduce external component count. Typical applications include 2.5–2.7 GHz WiMAX base-station power amplifiers, broadband wireless access repeaters, and RF front-end boosters in the 2.6 GHz LTE band overlap region. The 23 W average rating supports macro-cell or micro-cell PA designs targeting mid-range EIRP outputs, and the device pairs naturally with NXP's WiMAX pre-driver and driver-stage lineup. When designing with this MOSFET, ensure the carrier plate provides adequate thermal dissipation (target case temperature below 100 °C) and that DC blocking, RF bypass, and harmonic-filter networks are placed within 2 mm of the leads. Always sequence the gate bias before the drain supply to prevent uncontrolled RF oscillation during turn-on. This page synthesizes verified distributor stock and pricing, drop-in NXP family alternatives, RF power dissipation design notes, and a parametric comparison table drawn from the official datasheet - information not consolidated on any single distributor page.
MRF7S27130HSR5 - 2.7GHz 130W RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF7S27130HSR5 is a high-performance N-channel RF power MOSFET designed for continuous-wave and pulsed RF amplification in the 2.5–2.7 GHz wireless infrastructure band, delivering 130 W of output power with 16.5 dB typical gain from a 28 V supply. Housed in the NI-780S air-cavity ceramic package, it uses a single ended common-source configuration optimized for class AB linear operation. The device is intended for GSM, EDGE, WCDMA, LTE, and small-cell base-station final-stage PA designs. What is an RF power MOSFET? An RF power MOSFET (radio-frequency metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized to deliver high RF output power at high frequencies with high gain and reasonable efficiency. Within the broader hierarchy, RF MOSFETs sit under discrete semiconductors → transistors → MOSFETs → RF MOSFETs → laterally-diffused (LDMOS) RF devices. LDMOS has become the dominant RF PA technology for sub-3 GHz wireless infrastructure because it combines high gain, high power density, simple gate biasing, and excellent ruggedness into 50 Ω-matched ceramic or plastic packages. Key specifications of the MRF7S27130HSR5 include a drain-source breakdown of 65 V, a maximum continuous drain current of approximately 1.5 A, an operating frequency up to 2.7 GHz, 16.5 dB typical power gain, and 23 W typical CW output power in the matched reference circuit (the 130 W figure refers to pulsed / Doherty operation modes documented in the NXP datasheet). The ceramic NI-780S package provides low parasitic inductance and a bolt-down flange for direct heatsink mounting, giving it a thermal resistance (junction-to-case) on the order of 0.4–0.5 °C/W that supports the high dissipation of a 100 W-class PA. Architecturally, the device is an enhancement-mode N-channel LDMOS transistor built on NXP's HV7 RF power platform. Internally it integrates the input prematch, ESD structures, and a single source bond pad that can be grounded either through the package flange or through external leads, simplifying board-level bypass and improving broadband stability. The 28 V nominal VDS balances conduction loss against breakdown margin for typical cellular PA efficiencies of 50–60%. Typical applications include 2.6 GHz LTE / WiMAX base-station final-stage PAs, S-band industrial-scientific-medical (ISM) band transmitters, and pulsed-radar or DVB-T driver stages where the device's high gain reduces the number of driver stages required. The NI-780S package is also field-proven for Doherty amplifier topologies at 130 W average power. When designing with the MRF7S27130HSR5, ensure low-inductance source grounding via the package flange and a sufficiently large copper or aluminum heatsink to keep the channel below 200 °C at full CW power. Use NXP's reference design PCB stackup and matching network to preserve the published gain and efficiency numbers. This page synthesizes distributor pricing, same-NXP family drop-in alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
MRF7S38010HSR5 - 2W RF Power MOSFET 3.4-3.6GHz NI-400 | NXP
The NXP MRF7S38010HSR5 is an N-channel RF power MOSFET designed for wireless infrastructure base-station applications in the 3.4 GHz to 3.6 GHz band, delivering 2 W of output power from a 30 V supply rail. What is an RF power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to amplify high-frequency signals (typically tens of MHz to many GHz) with high gain, high efficiency, and ruggedness into mismatched loads. RF power MOSFETs sit within the broader taxonomy of power transistors -> discrete semiconductors -> semiconductor devices. They differ from low-frequency power MOSFETs by using a laterally diffused (LDMOS) or gallium-nitride (GaN) structure with carefully tuned input and output matching for a specific frequency band, allowing them to be used as the final or driver stage in cellular base-station transmitters, radar pulse amplifiers, and industrial RF heating sources. The MRF7S38010HSR5 provides 15 dB of small-signal power gain at 3.5 GHz, operates from a 30 V DC drain supply with typical quiescent drain current of 160 mA, and is housed in the NI-400 ceramic air-cavity package. It uses NXP's high-frequency RF MOSFET process technology that combines lateral diffusion with a ceramic hermetic air cavity for low parasitic inductance and superior thermal transfer to the chassis flange. This part targets small-cell and macro-cell base-station power amplifiers for WiMAX, LTE, and similar 3.5 GHz wireless services. It also serves commercial radar front-ends, microwave telemetry links, and test-bench RF amplifiers where a compact ceramic-packaged 2 W device is needed in a rugged air-cavity form. When designing with this MOSFET, observe the golden RF rule: never operate the device without proper 50-ohm input and output matching networks and a DC-isolated bias-T on the drain, since RF energy reflected back into the drain can overheat the die. Provide a sufficient grounded heatsink flange on the NI-400 mounting surface to maintain case temperature below the datasheet maximum. This page synthesizes distributor pricing tiers, carefully curated same-package drop-in alternative MPNs, and practical RF design notes that go beyond the manufacturer datasheet, helping engineers compare and source the right RF power transistor for their 3.5 GHz amplifier design.
MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
The NXP MRF7S38040HSR3 is a lateral N-channel enhancement-mode RF power MOSFET designed for 3400-3600 MHz WiMAX base-station applications, delivering 8 W average output power from a 30 V supply in a NI-400S-2S ceramic flanged package. Per the NXP datasheet, the device is rated for 30 V VDD operation, 450 mA quiescent drain current (IDQ), 14 dB typical power gain, and operation across the full 3.4-3.6 GHz WiMAX band. The HSR3 suffix indicates the tape-and-reel shipping option of the NI-400S-2S variant, while the matching MRF7S38040HR3 uses the NI-400-240 bolt-down ceramic package. An RF power MOSFET is a discrete transistor designed to deliver high RF output power at microwave frequencies while maintaining gain, efficiency, and ruggedness. RF power MOSFETs sit at the top of the RF amplifier chain - the final stage between the driver amplifier and the antenna in a base-station transmitter - and they belong to the broader RF semiconductor family that includes LDMOS, GaN HEMT, and bipolar power transistors. NXP's lateral N-channel LDMOS architecture offers an excellent balance of cost, broadband performance, and reliability for sub-6 GHz wireless infrastructure. Key features include 14 dB typical power gain at 3.5 GHz, 8 W average output power in WiMAX OFDM service, integrated ESD protection, and a high-drain-current ceramic package with low thermal resistance for continuous-wave (CW) and pulsed-OFDM operation. The lateral MOSFET structure is fabricated on a high-resistivity silicon substrate, which minimizes parasitic capacitance and enables broadband matching across the 200 MHz WiMAX band without retuning. Typical applications include WiMAX, WiBro, BWA, and OFDM multi-carrier Class AB and Class C amplifier stages in 3.5 GHz base stations, customer-premises equipment (CPE), and small-cell wireless backhaul. The part is also commonly used as a final-stage PA or driver for higher-power 3.5 GHz amplifier chains. When designing with this part, ensure the bias network provides a stable 450 mA IDQ, use a 50-ohm microstrip matching network optimized for 3.5 GHz, and mount the NI-400S-2S package to a heatsink with proper RF and DC isolation. Always consult the NXP reference design for matching-network component values and bias sequencing. This page synthesizes distributor stock, drop-in alternatives, and practical design guidance beyond the manufacturer datasheet, including same-package NXP variants and verified cross-brand equivalents where pin-compatibility is confirmed.
MRF7S38040HSR5 - 8W 3.6GHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF7S38040HSR5 is an 8W RF power MOSFET designed for 3.4 GHz to 3.6 GHz wireless infrastructure applications, supplied in the NI-400S-2S ceramic package. It operates from a 30 V drain bias and delivers a minimum 14 dB power gain at the cellular WiMAX / LTE band edges. The device uses NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology optimized for high efficiency and ruggedness in Doherty and driver stages of base-station power amplifiers. A power MOSFET is a voltage-controlled semiconductor switch and amplifier built around a metal-oxide gate that controls current flow between source and drain terminals. RF power MOSFETs are a subclass of discrete MOSFETs that integrate input/output matching networks and thermal management into a single ceramic-flange package, enabling high RF power density at microwave frequencies. In the hierarchy, MRF7S38040HSR5 belongs to: RF MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor -> active component. Key specifications include 30 V drain voltage rating, 450 mA typical quiescent drain current, 14 dB minimum power gain at 3.6 GHz, 8 W output power, and operation across the 3.4 GHz to 3.6 GHz band. The NI-400S-2S package provides a flanged ceramic body with bolt-down mounting for direct attachment to a heatsink or PCB copper heat-spreader, allowing sustained CW and pulsed operation in Doherty amplifier topologies. The internal LDMOS architecture provides high breakdown voltage, excellent thermal stability under mismatch, and broadband response. NXP's LDMOS process minimizes source-lead inductance and integrates ESD protection, making the MRF7S38040HSR5 tolerant of high VSWR conditions commonly encountered in field-deployed base-station amplifiers. Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE small-cell driver stages, point-to-point microwave links, and Doherty final-stage amplifiers where high gain, linearity, and ruggedness are required. The 14 dB gain allows two-stage designs with lower-cost predrivers. When designing with this device, attention must be paid to PCB layout, source-lead grounding (multiple low-inductance vias), and adequate heatsinking. Designers must also provide a 30 V regulated drain supply with sequenced gate bias and follow the recommended bias sequence in the manufacturer datasheet to avoid device stress. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet for engineers selecting a 3.5 GHz band RF power transistor.
MRF7S38075HSR3 - 12W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF7S38075HSR3 is a 12 W average, 30 V lateral N-channel RF power MOSFET designed for 3400-3600 MHz WiMAX and broadband wireless applications. Packaged in the NI-780S ceramic flanged package (CASE 465-06, STYLE 1), it delivers a typical gain of 14 dB at 3.5 GHz and is rated for 900 mA DC quiescent bias with a 30 V drain supply. The 'HSR3' suffix denotes a tape-and-reel, RoHS-compliant production variant intended for high-volume SMT-compatible RF assembly lines using bolted or soldered-down thermal management. What is an RF Power MOSFET? An RF power MOSFET (Radio Frequency power Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized to amplify high-frequency signals from tens of MHz into the GHz range while delivering meaningful RF output power (watts, not milliwatts). RF power MOSFETs sit in the hierarchy: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> RF power MOSFET. They are the workhorse final stage of any base-station, repeater, or solid-state power amplifier driving an antenna at VHF/UHF/microwave frequencies. The MRF7S38075H family uses NXP's high-voltage lateral MOSFET process on a ceramic substrate (NI-780), giving it the thermal headroom needed to dissipate multi-watt RF power at S-band frequencies. Designed-in features include broadband impedance matching around the 3.5 GHz WiMAX band, integrated ESD protection structures, and a robust gold-metallized ceramic flange that bolts directly to a heatsink or pallet. The lateral geometry provides low parasitic capacitance and high drain efficiency relative to earlier-generation bipolar RF devices operating at the same band. Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE/5G NR mid-band driver stages, broadband wireless access (BWA) subscriber units, military multiband RF links, and S-band solid-state radar transmitters. The 14 dB gain allows the part to drive a final P1dB stage with only modest input power from a preceding gain block. Design consideration: this is a 50 V-rated, 12 W average RF part - thermal design and PCB layout around the input/output matching network are critical. Use a properly tuned microstrip or stripline network on a low-loss RF substrate (Rogers RO4003C or similar) and mount the ceramic flange to a copper or aluminum spreader with thermal compound to keep the junction below 200 C under CW or long-pulse duty cycles. This page synthesizes NXP datasheet specifications, current distributor stock, and pin-for-pin RF MOSFET alternatives so RF design engineers can quickly evaluate drop-in options for 3.5 GHz WiMAX amplifier designs.
MRF8HP21080HR5 - 16W 2.17GHz RF Power LDMOS | NXP
The NXP Semiconductors MRF8HP21080HR5 is a W-CDMA/LTE lateral N-Channel RF power LDMOS transistor delivering 16W average output power at 2.17GHz in a 4-pin NI-780-4 (Case 465M) ceramic flange-mount package. It operates from a 28V test supply and is rated for a 65V drain-source breakdown, achieving 14.4dB power gain in the 2110–2170MHz cellular band. What is an RF Power LDMOS? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for high-power RF amplification in the 1–3GHz range. It belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family and, more broadly, the RF power transistor hierarchy used in wireless infrastructure. Compared to GaN HEMT or bipolar RF transistors, LDMOS offers the best cost-per-watt at sub-3GHz frequencies and remains the workhorse for cellular base-station power amplifiers. The MRF8HP21080HR5 features high gain (14.4dB at 2.17GHz), robust 65V drain breakdown, and a thermally enhanced NI-780-4 ceramic flange package engineered for direct bolt-down to a heatsink or spreader. Its dual-channel configuration enables Doherty or push-pull amplifier designs. The device is purpose-built for W-CDMA and LTE base-station driver or final-stage amplification, with linearity and efficiency tuned for 3GPP signal profiles. Designed for cellular infrastructure RF amplification, the MRF8HP21080HR5 delivers 14.4dB gain, 65V breakdown ruggedness, and 16W average output power under W-CDMA/LTE test conditions. The NI-780-4 flange package provides low thermal resistance and is directly compatible with industry-standard RF amplifier module layouts used by macro-cell and small-cell base-station OEMs. Typical applications include W-CDMA/LTE base-station power amplifiers, Doherty final stages, driver amplifiers for higher-power PAs, and cellular repeater/boosters operating in the 2110–2170MHz band. Pair with circulators and digital predistortion (DPD) front-ends for production line systems. When laying out the PCB, route the RF input/output on 50Ω controlled-impedance traces and bond the gate/drain leads with minimal lead length to preserve gain and efficiency. Always bolt the ceramic flange to a clean, flat heatsink with proper thermal compound - inadequate cooling is the most common cause of field failure in LDMOS RF amplifiers. This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical RF design guidance not aggregated in the manufacturer datasheet alone.
MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
The NXP MRF8HP21130HR5 is a 130 W N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA and LTE base-station applications in the 2110–2170 MHz band. Packaged in the NI-780-4 ceramic flanged form, the device delivers 14 dB gain and 28 W output power at 2.17 GHz when tested at 28 V with 360 mA quiescent bias. An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. In the hierarchy of active RF devices it sits between small-signal GaAs/HBT MMICs (used for milliwatt-level receive chains) and traveling-wave tubes or GaN HEMTs (used for very high power or millimeter-wave). LDMOS remains the dominant technology for sub-3 GHz cellular infrastructure because of its mature 50 V silicon process, excellent linearity, and low cost-per-watt. The MRF8HP21130HR5 belongs to NXP's Airfast family, a portfolio targeting Doherty and Class AB final-stage amplifier modules. Key specifications include a drain-to-source breakdown of 65 V, 14 dB power gain, 28 W Pout at 28 V / 360 mA Idq, and operation across 2110–2170 MHz. The NI-780-4 air-cavity ceramic package provides low thermal resistance and bolt-down flange mounting for heatsink attachment. Built-in ESD protection and a wide gate-bias range simplify board-level integration into macro-cell and outdoor small-cell radios. Architecturally, the die uses NXP's HV8 LDMOS process — a refinement of the earlier HV7 platform — with optimized source-via grounding and a pre-matched input network. This delivers flat gain, high efficiency (>45 % drain efficiency in Doherty), and ruggedness into a 5:1 VSWR mismatch, all critical for cellular base-station PA designers balancing linearity (ACPR) against DC consumption. Typical deployments include W-CDMA, LTE, and 5G NR (in the n1/n3 bands) base-station final-stage PAs, where it is normally configured as a symmetric or Doherty pair. The same die supports Class AB, Class C, and pulsed-RF modulation formats, making it a flexible choice for multi-mode radios. When integrating this part, ensure proper sequencing of the gate bias before drain voltage and observe the maximum junction rating of 225 °C; flanged mounting with a generous thermal compound layer is mandatory to sustain the 130 W CW capability.
MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
The NXP Semiconductors MRF8HP21130HSR3 is a lateral N-channel RF power MOSFET designed for W-CDMA and LTE cellular base station applications covering 2110-2170 MHz, delivering 28 W average output power at 28 V in a NI-780S-4 air-cavity ceramic package. It supports Class AB and Class C operation for typical cellular modulation formats and integrates an advanced high-performance in-package Doherty configuration. A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows laterally through a silicon die optimized for radio-frequency power amplification, as opposed to small-signal or switching transistors. In the power-amplifier (PA) hierarchy, RF power MOSFETs sit beneath GaN HEMTs and LDMOS devices and above small-signal MOSFETs, and are categorized by frequency band, breakdown voltage, and package style. The MRF8HP21130HSR3 belongs to NXP's MRF8HP high-power LDMOS family, engineered for sub-3 GHz cellular infrastructure where Doherty topologies are the dominant efficiency-boosting architecture. Key features include 14 dB small-signal gain, 28 W average output power with peak envelope power suited for LTE 10 MHz carrier waveforms, and a 28 V drain bias. The NI-780S-4 air-cavity ceramic package provides low thermal resistance and repeatable RF performance critical for Doherty amplifier combining. The device operates as part of a two-stage in-package Doherty configuration with integrated input splitter and output combiner, reducing external PCB complexity for the symmetric Doherty PA designer. Typical applications include W-CDMA and LTE base station power amplifiers, Doherty final-stage transmitters in the 2110-2170 MHz band (Band I / Band 4 / Band 10), and macro-cell or small-cell cellular infrastructure where the high gain and integrated package simplify board layout. The part is also referenced in design examples for driver and final-stage combinations in multi-carrier GSM/EDGE upgrade paths. When designing with this MOSFET, attention to PCB material and thermal management is critical. Use low-loss RF substrates such as Rogers RO4350B or RO4003C for the matching networks, and ensure the NI-780S-4 flange is bolted to a heatsink with proper thermal compound. Drain bias sequencing, gate bias adjustment for quiescent current, and proper input/output harmonic filtering are required for stable Doherty operation. This page synthesizes distributor pricing, drop-in alternatives, and design guidance drawn from the manufacturer datasheet and cross-reference sources, offering engineering context not duplicated on distributor product listings.
MRF8P18265HSR5 - 1.88GHz 72W LDMOS RF Power Transistor | NXP
The NXP MRF8P18265HSR5 is an N-channel enhancement-mode LDMOS RF power transistor designed for high-peak Doherty amplifier stages in 1.88 GHz cellular infrastructure, delivering 72 W output power with 16 dB gain and tested at 30 V. It is housed in an NI 1230S-8 air-cavity ceramic package optimized for high-power base-station RF performance. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET variant engineered for radio-frequency power amplification. Within the discrete semiconductor taxonomy, it sits under RF MOSFETs, which themselves belong to the power transistor family used in telecom infrastructure. LDMOS technology dominates macro-cell base-station power amplifiers because it combines high RF power density, excellent gain at UHF/microwave frequencies, and ruggedness under mismatched load conditions. Key specifications include a 65 V drain-source voltage rating, 800 mA continuous DC drain current, and operation centered at 1.88 GHz with 16 dB power gain. The device is engineered for high-efficiency Doherty amplifier configurations where the peaking amplifier must deliver substantial output while the carrier amplifier handles the average power envelope. The ceramic NI 1230S-8 package provides low thermal resistance and high RF gain stability under continuous CW and pulsed signal conditions. Architecturally, the MRF8P18265HSR5 uses NXP's HV8 LDMOS process generation, which integrates optimized matching structures inside the ceramic flange package. This reduces the need for external matching networks and improves gain flatness across the 1.8-2.0 GHz band. The high breakdown voltage gives designers significant headroom for VSWR mismatch survival typical of antenna-fed base-station PAs. Typical applications include 4G LTE macro-cell base-station Doherty final stages, WCDMA/UMTS power amplifiers, and high-peak RF transmitter boosters operating in the 1.8-1.9 GHz DCS/PCS band. Engineers select this part when designing Doherty PAs needing high gain and high peak power for the peaking amplifier path. A critical design consideration is thermal management: at 72 W CW output and roughly 50% drain efficiency, the device dissipates ~50 W internally. The NI 1230S-8 flange must be bolted to a heatsink or cold plate with proper thermal interface material, otherwise junction temperature will exceed the 200 C rating. Use proper sequencing of gate bias (VG) before drain voltage (VD) during turn-on. This page consolidates distributor pricing, verified parametric data, and practical drop-in alternatives not found in a single source, helping RF engineers accelerate design and sourcing decisions.
MRF8P20100HSR3 - 100W RF Power LDMOS, 1.8-2.0 GHz | NXP
The NXP MRF8P20100HSR3 is a 100 W (P3 dB) lateral N-channel RF power LDMOS transistor designed for single-carrier W-CDMA and GSM/EDGE base-station applications from 1805 to 2025 MHz, supplied in a NI-780S-4L (Case 465H-02) ceramic flanged package. According to the NXP datasheet MRF8P20100H.pdf, the device is specified at 28 V VDS with 400 mA quiescent bias current, delivers 16 dB typical power gain at 2.03 GHz, and is rated for 20 W average output power in W-CDMA service with -45 dBc ACLR linearity. A lateral double-diffused MOS (LDMOS) RF power transistor is a specialized power MOSFET architecture optimized for high-frequency, high-power amplification in wireless infrastructure. LDMOS devices combine a low on-resistance lateral channel with a robust drain region, allowing efficient operation at RF frequencies where conventional vertical power MOSFETs lose gain. As a member of the RF power transistor family - itself a subclass of discrete power semiconductors - LDMOS has become the dominant technology for macro-cell base-station power amplifiers below 3 GHz due to its high gain, good linearity, and broadband matching characteristics. Key features include a 65 V drain-source breakdown rating, integrated electrostatic discharge (ESD) protection, an internal input matching network that simplifies external PCB matching, and a high thermal conductivity ceramic package. The device is internally matched to 50 ohms at the input, allowing immediate deployment in standard amplifier PCBs without complex matching networks. RoHS compliance and a wide operating junction temperature range suit the part for continuous-duty base-station environments. Typical applications include W-CDMA, LTE, and GSM/EDGE driver and final-stage power amplifiers in macro-cell base stations, repeaters, and high-power laboratory RF amplifiers operating in the 1.8 to 2.0 GHz wireless bands. When using this device, designers should follow NXP application note recommendations for PCB thermal management and bias sequencing. Proper heatsinking with the ceramic flange is essential - thermal resistance from junction to case is in the low single-digit C/W range, but the flange must be mounted to a sufficient copper or aluminum heat spreader. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the NXP datasheet, with values verified against DigiKey, Mouser, and NXP sources as of 2026-10-16.
MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
The NXP (formerly Freescale) MRF8P20160HSR3 is a single W-CDMA lateral N-Channel enhancement-mode RF power MOSFET rated for 37 W average output power in the 1880-2025 MHz band, supplied in the NI-780S-4 ceramic flanged package. It is specified for 28 V VDD operation with 550 mA quiescent drain current (IDQA), and provides 16.5 dB typical gain at 1.92 GHz. The MRF8P20160HSR3 is the S-prefix variant (200°C Tj, sample-tested) of the MRF8P20160H family intended for cellular base-station amplifier chains. An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized to deliver high RF output power at VHF/UHF/microwave frequencies while maintaining acceptable efficiency and linearity. The device sits in the hierarchy: RF transistor -> power transistor -> discrete semiconductor -> power amplifier building block. In a base-station lineup the MRF8P20160HSR3 typically operates as the final-stage or driver PA, converting DC power into modulated RF energy while the system controller handles Doherty combining, bias sequencing and digital predistortion. Key specifications include 1880-2025 MHz operating band, 37 W average output power (single-carrier W-CDMA), 28 V drain supply, 16.5 dB power gain at 1.92 GHz, and -0.5 dB AM-AM compression at rated Pout. The device also integrates ESD protection, simplified biasing, and broadband matching tolerance suitable for Class AB or Class C operation across common cellular modulation formats. The MRF8P20160HSR3 uses NXP's HV8 lateral MOSFET process technology, providing high breakdown voltage and a thermally-enhanced ceramic NI-780S-4 package. This package is designed for direct screw-down mounting to a heatsink with low thermal resistance, enabling continuous CW and pulsed operation in demanding base-station thermal environments. Typical applications include W-CDMA, LTE and TD-SCDMA base-station power amplifiers in the 1.88-2.025 GHz band, Doherty final-stage amplifiers for macro-cell radios, and broadband driver stages for higher-power push-pull configurations. The part is well matched to standard cellular PA reference designs and works with NXP evaluation fixtures characterized at 2025 MHz. When designing with this device, careful attention to the PCB layout, ground-plane continuity, and harmonic-filter design is required to meet spectral-emission masks. Use of NXP's MRF8P20160H datasheet application notes is recommended for Doherty amplifier implementation, bias sequencing and thermal management guidance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping RF engineers select the right part faster.