BAT48 vs BAT43 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT48 sa pamamagitan ng STMicroelectronics at BAT43 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
BAT48 - 40V 350mA Small-Signal Schottky Diode | STMicroelectronics
BAT48 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT48 | BAT43 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small-signal Schottky barrier diode | — |
| Reverse Voltage (VRRM) | 40 V | — |
| Average Forward Current (IF(AV)) | 350 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery Time (Trr) | approx. 5 ns (per web source data) | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Turn-On Voltage Feature | Very low turn-on voltage | — |
| Switching Speed | Fast switching | — |
| ESD Protection | Integrated PN junction guard ring | Integrated guard ring against excessive voltage |
| Packhaging | DO-35 (axial, through-hole, glass) | DO-35 (glass axial, through-hole) |
| Series Packages | SOD-123, SOD-323, DO-35 | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Application | General purpose, low turn-on, fast switching | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Polarity Marking | Cathode band (per DO-35 convention) | — |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Pwersang Pinahihigpit (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Configuration | — | Single diode |