IRS2011STRPBF vs IR2011STRPBF Comparaison
Comparaison détaillée côte à côte de IRS2011STRPBF par Infineon et IR2011STRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRS2011STRPBF | IR2011STRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $0,71 |
| Fonction | Half-Bridge Gate Driver | — |
| Configuration | High-Side and Low-Side, Independent Channels | High-Side and Low-Side (Independent) |
| Nombre de sorties | 2 | — |
| Maximum Offset Voltage (High-Side) | 200 V | — |
| Output Current (Source / Sink) | 1 A typical / 1 A typical | — |
| Propagation Delay (ton/toff) | 60 ns typical | — |
| Delay Matching | 20 ns maximum | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.0 V CMOS or LSTTL |
| Bootstrap Supply | Integrated bootstrap diode, floating channel | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Negative Transient Tolerance | Yes, dV/dt immune | dV/dt immune |
| Boîtier | 8-SOIC (DSO-8) | 8-SOIC (3.90 mm body width) |
| Température de fonctionnement | -40 C to +125 C | -40 C to +125 C |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant (PBF suffix) | — |
| Suitable Drivers | MOSFETs and IGBTs | — |
| Number of Drivers | — | 2 (Half-Bridge) |
| Peak Source Current | — | 1 A (typical) |
| Peak Sink Current | — | 1 A (typical) |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Supply Voltage (VBS) | — | 10 V to 20 V (operational to +200 V) |
| Propagation Delay (typ.) | — | 80 ns |
| Turn-On Rise Time (typ.) | — | 35 ns |
| Turn-Off Fall Time (typ.) | — | 20 ns |
| Offset Voltage Rating | — | 200 V |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |