IRS2011STRPBF vs IR2011STRPBF Vergleich
Detaillierter Direktvergleich von IRS2011STRPBF von Infineon und IR2011STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRS2011STRPBF | IR2011STRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,71 |
| Funktion | Half-Bridge Gate Driver | — |
| Configuration | High-Side and Low-Side, Independent Channels | High-Side and Low-Side (Independent) |
| Anzahl der Ausgänge | 2 | — |
| Maximum Offset Voltage (High-Side) | 200 V | — |
| Output Current (Source / Sink) | 1 A typical / 1 A typical | — |
| Propagation Delay (ton/toff) | 60 ns typical | — |
| Delay Matching | 20 ns maximum | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.0 V CMOS or LSTTL |
| Bootstrap Supply | Integrated bootstrap diode, floating channel | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Negative Transient Tolerance | Yes, dV/dt immune | dV/dt immune |
| Gehäuse | 8-SOIC (DSO-8) | 8-SOIC (3.90 mm body width) |
| Betriebstemperatur | -40 C to +125 C | -40 C to +125 C |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (PBF suffix) | — |
| Suitable Drivers | MOSFETs and IGBTs | — |
| Number of Drivers | — | 2 (Half-Bridge) |
| Peak Source Current | — | 1 A (typical) |
| Peak Sink Current | — | 1 A (typical) |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Supply Voltage (VBS) | — | 10 V to 20 V (operational to +200 V) |
| Propagation Delay (typ.) | — | 80 ns |
| Turn-On Rise Time (typ.) | — | 35 ns |
| Turn-Off Fall Time (typ.) | — | 20 ns |
| Offset Voltage Rating | — | 200 V |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |