IRS2011STRPBF vs IR2011STRPBF 비교
다음의 상세 나란히 비교: IRS2011STRPBF 제조: Infineon 및 IR2011STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRS2011STRPBF | IR2011STRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $0.71 |
| 기능 | Half-Bridge Gate Driver | — |
| Configuration | High-Side and Low-Side, Independent Channels | High-Side and Low-Side (Independent) |
| 출력 수 | 2 | — |
| Maximum Offset Voltage (High-Side) | 200 V | — |
| Output Current (Source / Sink) | 1 A typical / 1 A typical | — |
| Propagation Delay (ton/toff) | 60 ns typical | — |
| Delay Matching | 20 ns maximum | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.0 V CMOS or LSTTL |
| Bootstrap Supply | Integrated bootstrap diode, floating channel | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Negative Transient Tolerance | Yes, dV/dt immune | dV/dt immune |
| 패키지 | 8-SOIC (DSO-8) | 8-SOIC (3.90 mm body width) |
| 동작 온도 | -40 C to +125 C | -40 C to +125 C |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant (PBF suffix) | — |
| Suitable Drivers | MOSFETs and IGBTs | — |
| Number of Drivers | — | 2 (Half-Bridge) |
| Peak Source Current | — | 1 A (typical) |
| Peak Sink Current | — | 1 A (typical) |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Supply Voltage (VBS) | — | 10 V to 20 V (operational to +200 V) |
| Propagation Delay (typ.) | — | 80 ns |
| Turn-On Rise Time (typ.) | — | 35 ns |
| Turn-Off Fall Time (typ.) | — | 20 ns |
| Offset Voltage Rating | — | 200 V |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |